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A DOUBLE-LINE IMAGE OF A DISLOCATION IN A SILICON SINGLE CRYSTAL OBSERVED BY X-RAY PLANE WAVE TOPOGRAPHYISHIDA K; OOTUKA A; TAKAGI S et al.1981; PHILOS. MAG., A; ISSN 0141-8610; GBR; DA. 1981; VOL. 43; NO 4; PP. 935-944; BIBL. 17 REF.Article

CALCULATION OF A SHADOW CONE FORMED BY SCATTERING OF AN ION BEAM FROM AN ATOM = CALCUL DU CONE D'OMBRE FORME PAR DIFFUSION D'UN FAISCEAU D'IONS PAR UN ATOMEKOMAKI KI; OOTUKA A; FUJIMOTO F et al.1982; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 8; PART. 2; PP. 521-522; BIBL. 4 REF.Article

Projectile dependence of KLl vacancy production cross sections of Al by H and He ion bombardmentsOOTUKA, A; KAWATSURA, K; KOMAKI, K et al.Journal of the Physical Society of Japan. 1984, Vol 53, Num 7, pp 2215-2218, issn 0031-9015Article

Single and double K-shell ionization cross sections of beryllium by C, N, O and Ne ion bombardmentsOOTUKA, A; KAWATSURA, K; FUJIMOTO, F et al.Journal of the Physical Society of Japan. 1984, Vol 53, Num 3, pp 1001-1005, issn 0031-9015Article

Molecular effect of AlKα X-ray yields from aluminium oxide films for H+ and H2+ ion bombardmentsOOTUKA, A; FUJIMOTO, F; KOMAKI, K et al.Physics letters. A. 1983, Vol 97, Num 5, pp 191-193, issn 0375-9601Article

Stopping cross-sections of rare gases in amorphous silicon for MeV energy helium ionsOOTUKA, A; KOMAKI, K; FUJIMOTO, F et al.Japanese journal of applied physics. 1983, Vol 22, Num 8, pp 1306-1309, issn 0021-4922Article

Measurements of beam-foil spectra of highly ionized chlorine ions in the region of 170-260 ÅSATAKA, M; OZAWA, K; KAWATSURA, K et al.Journal of the Physical Society of Japan. 1988, Vol 57, Num 10, pp 3352-3556, issn 0031-9015Article

Detection of adsorbed hydrogen on W(001) by using 1H(15N, αγ)12C reaction = Détection de l'hydrogène adsorbé sur W(001) en utilisant la réaction 1H(15N, αγ)12CIWATA, Y; FUJIMOTO, F; VILALTA, E et al.Japanese journal of applied physics. 1987, Vol 26, Num 6, pp L1026-L1028, issn 0021-4922, 2Article

Channeling radiation from 350 MeV electronsKOMAKI, K; OOTUKA, A; FUJIMOTO, F et al.Physics letters. A. 1983, Vol 98, Num 5-6, pp 303-305, issn 0375-9601Article

Hydrogen content in a-SiC: H films prepared by plasma decomposition of silane and methane or ethyleneFUJIMOTO, F; OOTUKA, A; HAMAKAWA, Y et al.Japanese journal of applied physics. 1984, Vol 23, Num 7, pp 810-814, issn 0021-4922, 1Article

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