A formula for the central potential's maximum magnitude in arbitrarily doped symmetric double-gate MOSFETsGARCIA-SANCHEZ, Francisco J; ORTIZ-CONDE, Adelmo.Solid-state electronics. 2012, Vol 76, pp 112-115, issn 0038-1101, 4 p.Article

Unification of asymmetric DG, symmetric DG and bulk undoped-body MOSFET drain currentORTIZ-CONDE, Adelmo; GARCIA SANCHEZ, Francisco J.Solid-state electronics. 2006, Vol 50, Num 11-12, pp 1796-1800, issn 0038-1101, 5 p.Article

An Explicit Analytic Compact Model for Nanocrystalline Zinc Oxide Thin-Film TransistorsGARCIA-SANCHEZ, Francisco J; ORTIZ-CONDE, Adelmo.I.E.E.E. transactions on electron devices. 2012, Vol 59, Num 1, pp 46-50, issn 0018-9383, 5 p.Article

A Rigorous Classical Solution for the Drain Current of Doped Symmetric Double-Gate MOSFETsORTIZ-CONDE, Adelmo; GARCIA-SANCHEZ, Francisco J.I.E.E.E. transactions on electron devices. 2012, Vol 59, Num 9, pp 2390-2395, issn 0018-9383, 6 p.Article

Analytic solution of the channel potential in undoped symmetric dual-gate MOSFETsORTIZ-CONDE, Adelmo; GARCIA-SANCHEZ, Francisco J; MALOBABIC, Slavica et al.I.E.E.E. transactions on electron devices. 2005, Vol 52, Num 7, pp 1669-1672, issn 0018-9383, 4 p.Article

Integration-based approach to evaluate the sub-threshold slope of MOSFETsORTIZ-CONDE, Adelmo; GARCIA-SANCHEZ, Francisco J; LIOU, Juin J et al.Microelectronics and reliability. 2010, Vol 50, Num 2, pp 312-315, issn 0026-2714, 4 p.Article

An explicit multi-exponential model for semiconductor junctions with series and shunt resistancesLUGO-MUNOZ, Denise; MUCI, Juan; ORTIZ-CONDE, Adelmo et al.Microelectronics and reliability. 2011, Vol 51, Num 12, pp 2044-2048, issn 0026-2714, 5 p.Article

Evaluating MOSFET harmonic distortion by successive integration of the I-V characteristicsSALAZAR, Ramon; ORTIZ-CONDE, Adelmo; GARCIA-SANCHEZ, Francisco J et al.Solid-state electronics. 2008, Vol 52, Num 7, pp 1092-1098, issn 0038-1101, 7 p.Article

Revisiting MOSFET threshold voltage extraction methodsORTIZ-CONDE, Adelmo; GARCIA-SANCHEZ, Francisco J; MUCI, Juan et al.Microelectronics and reliability. 2013, Vol 53, Num 1, pp 90-104, issn 0026-2714, 15 p.Article

Threshold voltage extraction in Tunnel FETsORTIZ-CONDE, Adelmo; GARCIA-SANCHEZ, Francisco J; MUCI, Juan et al.Solid-state electronics. 2014, Vol 93, pp 49-55, issn 0038-1101, 7 p.Article

Indirect fitting procedure to separate the effects of mobility degradation and source-and-drain resistance in MOSFET parameter extractionORTIZ-CONDE, Adelmo; GARCIA-SANCHEZ, Francisco J; JUAN MUCI et al.Microelectronics and reliability. 2009, Vol 49, Num 7, pp 689-692, issn 0026-2714, 4 p.Article