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The behaviour of minority carriers in thermally stimulated studies of the Si-SiO2 interfaceGOMENYUK, YU. V; LYSENKO, V. S; OSIYUK, I. N et al.Physica status solidi. A. Applied research. 1993, Vol 140, Num 1, pp 173-178, issn 0031-8965Article

Current stochasticity of field emission of charge from traps in the transition layer of implanted MIS structuresGOMENIUK, YU. V; LITOVSKI, R. N; LYSENKO, V. S et al.Applied surface science. 1992, Vol 59, Num 2, pp 91-94, issn 0169-4332Article

Flash-Lamp annealing of Si-SiO2 transition layer defectsLYSENSKO, V. S; ZIMENKO, V. I; TYAGULSKII, I. P et al.Physica status solidi. A. Applied research. 1985, Vol 87, Num 2, pp K175-K180, issn 0031-8965Article

Interface trap properties of thermally oxidized n-type 4H-SiC and 6H-SiCRUDENKO, T. E; OSIYUK, I. N; TYAGULSKI, I. P et al.Solid-state electronics. 2005, Vol 49, Num 4, pp 545-553, issn 0038-1101, 9 p.Article

Thermally stimulated characterization of shallow traps in the SiC/Si heterojunctionLYSENKO, V. S; TYAGULSKI, I. P; GOMENIUK, Y. V et al.Journal of physics. D, Applied physics (Print). 1998, Vol 31, Num 13, pp 1499-1503, issn 0022-3727Article

Electric field effects at the surface of high-temperature superconductorsLYSENKO, V. S; TYAGULSKI, I. P; LOZOVSKI, V. Z et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.305-Pr3.308, issn 1155-4339Conference Paper

Thermally stimulated field emission of charge from traps in the transition layer of Si-SiO2 structuresGOMENIUK, Y. V; LITOVSKI, R. N; LYSENKO, V. S et al.Applied surface science. 1992, Vol 55, Num 2-3, pp 179-185, issn 0169-4332Article

Charge trapping in high-dose Ge-implanted and Si-implanted silicon-dioxide thin filmsNAZAROV, A. N; OSIYUK, I. N; TYAGULSKII, I. P et al.Proceedings - Electrochemical Society. 2003, pp 144-149, issn 0161-6374, isbn 1-56677-347-4, 6 p.Conference Paper

Thermally activated dissipation and upper critical magnetic field under the strong electrostatic field in the BiPbSrCaCuO thin filmLYSENKO, V. S; GOMENIUK, Y. V; TYAGULSKI, I. P et al.Journal de physique. IV. 1996, Vol 6, Num 3, pp C3.271-C3.276, issn 1155-4339Conference Paper

Correlation between defect-related electroluminescence and charge trapping in Gd-implanted SiO2 layersPRUCNAL, S; SUN, J. M; NAZAROV, A et al.Applied physics. B, Lasers and optics (Print). 2007, Vol 88, Num 2, pp 241-244, issn 0946-2171, 4 p.Article

Quenching of electroluminescence and charge trapping in high-efficiency Ge-implanted MOS light-emitting silicon diodesNAZAROV, A. N; OSIYUK, I. N; SUN, J. M et al.Applied physics. B, Lasers and optics (Print). 2007, Vol 87, Num 1, pp 129-134, issn 0946-2171, 6 p.Article

The electrical assessment of Si1-xGex/Si heterostructuresLYSENKO, V. S; TYAGULSKI, I. P; GOMENIUK, Y. V et al.Journal de physique. IV. 1998, Vol 8, Num 3, pp Pr3.87-Pr3.90, issn 1155-4339Conference Paper

Interrelation between surface states and transition layer defects in Si-SiO2 structuresLYSENKO, V. S; SYTENKO, T. N; SNITKO, O. V et al.Solid state communications. 1986, Vol 57, Num 3, pp 171-174, issn 0038-1098Article

Reactivation of damaged rare earth luminescence centers in ion-implanted metal-oxide-silicon light emitting devicesPRUCNAL, S; REBOHLE, L; NAZAROV, A. N et al.Applied physics. B, Lasers and optics (Print). 2008, Vol 91, Num 1, pp 123-126, issn 0946-2171, 4 p.Article

Charge trapping characterization of MOCVD HfO2/p-Si interfaces at cryogenic temperaturesTYAGULSKYY, I. P; OSIYUK, I. N; LYSENKO, V. S et al.Microelectronics and reliability. 2007, Vol 47, Num 4-5, pp 726-728, issn 0026-2714, 3 p.Conference Paper

Electrical characterization of the amorphous SiC-pSi structureLYSENKO, V. S; TYAGULSKI, I. P; GOMENIUK, Y. V et al.Microelectronic engineering. 1999, Vol 48, Num 1-4, pp 265-268, issn 0167-9317Conference Paper

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