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THE ELECTRICAL RECOMBINATION EFFICIENCY OF INDIVIDUAL EDGE DISLOCATIONS AND STACKING FAULT DEFECTS IN N-TYPE SILICONOURMAZD A; BOOKER GR.1979; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1979; VOL. 55; NO 2; PP. 771-784; ABS. GER; BIBL. 22 REF.Article

The electrical properties of dislocations in semiconductorsOURMAZD, A.Contemporary physics. 1984, Vol 25, Num 3, pp 251-268, issn 0010-7514Article

Semiconductor interfaces: abruptness, smoothness, and optical propertiesOURMAZD, A.Journal of crystal growth. 1989, Vol 98, Num 1-2, pp 72-81, issn 0022-0248Conference Paper

Electronic structure of oxygen thermal donors in siliconROBERTSON, J; OURMAZD, A.Applied physics letters. 1985, Vol 46, Num 6, pp 559-561, issn 0003-6951Article

Trends and limits in monolithic integration by increasing the die areaWARWICK, C. A; OURMAZD, A.IEEE transactions on semiconductor manufacturing. 1993, Vol 6, Num 3, pp 284-289, issn 0894-6507Article

Observation of order-disorder transitions in strained-semiconductor systemsOURMAZD, A; BEAN, J. C.Physical review letters. 1985, Vol 55, Num 7, pp 765-768, issn 0031-9007Article

Phosphorus gettering and intrinsic gettering of nickel in siliconOURMAZD, A; SCHRÖTER, W.Applied physics letters. 1984, Vol 45, Num 7, pp 781-783, issn 0003-6951Article

ENHANCEMENT OF BIREFRINGENCE IN POLARISATION-MAINTAINING FIBRES BY THERMAL ANNEALINGOURMAZD A; BIRCH RD; VARNHAM MP et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 4; PP. 143-144; BIBL. 4 REF.Article

Scaling the Si MOSFET : from bulk to SOI to bulkRAN-HONG YAN; OURMAZD, A; LEE, K. F et al.I.E.E.E. transactions on electron devices. 1992, Vol 39, Num 7, pp 1704-1710, issn 0018-9383Article

Oxygen-related thermal donors in silicon: a new structural and kinetic modelOURMAZD, A; SCHRÖTER, W; BOURRET, A et al.Journal of applied physics. 1984, Vol 56, Num 6, pp 1670-1681, issn 0021-8979Article

Dark-field electron microscopy of dissociated dislocations and surface steps in silicon using forbidden reflectionsOURMAZD, A; ANSTIS, G. R; HIRSCH, P. B et al.Philosophical magazine. A. Physics of condensed matter. Defects and mechanical properties. 1983, Vol 48, Num 1, pp 139-153, issn 0141-8610Article

Interaction of energetic ions with inhomogeneous solidsBODE, M; OURMAZD, A; CUNNINGHAM, J et al.Physical review letters. 1991, Vol 67, Num 7, pp 843-846, issn 0031-9007Article

Low temperature interdiffusion in the HgCdTe/CdTe system, studied at near-atomic resolutionKIM, Y; OURMAZD, A; FELDMAN, R. D et al.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1990, Vol 8, Num 2, pp 1116-1119, issn 0734-2101Article

Lattice and atomic structure imaging of semiconductors by high resolution transmission electron microscopyOURMAZD, A; AHLBORN, K; IBEH, K et al.Applied physics letters. 1985, Vol 47, Num 7, pp 685-688, issn 0003-6951Article

Direct resolution and identification of the sublattices in compound semiconductors by high-resolution transmission electron microscopyOURMAZD, A; RENTSCHLER, J. R; TAYLOR, D. W et al.Physical review letters. 1986, Vol 57, Num 24, pp 3073-3076, issn 0031-9007Article

Two-dimensional mapping of pn junctions by electron holographyRAU, W. D; SCHWANDER, P; OURMAZD, A et al.Physica status solidi. B. Basic research. 2000, Vol 222, Num 1, pp 213-217, issn 0370-1972Article

Effect of processing on the structure of the Si/SiO2 interfaceOURMAZD, A; RENTSCHLER, J. A; BEVK, J et al.Applied physics letters. 1988, Vol 53, Num 9, pp 743-745, issn 0003-6951Article

Direct resolution and identification of the sublattices in compound semiconductors by high-resolution transmission electron microscopyOURMAZD, A; RENTSCHLER, J. R; TAYLOR, D. W et al.Physical review letters. 1986, Vol 57, Num 24, pp 3073-3076, issn 0031-9007Article

Submicrocrystallites and the orientational proximity effectOURMAZD, A; BEAN, J. C; PHILLIPS, J. C et al.Physical review letters. 1985, Vol 55, Num 15, pp 1599-1601, issn 0031-9007Article

Lattice and atomic structure imaging of semiconductors by high resolution transmission electron microscopyOURMAZD, A; AHLBORN, K; IBEH, K et al.Applied physics letters. 1985, Vol 47, Num 7, pp 685-688, issn 0003-6951Article

High resolution composition profiles of multilayersBAUMANN, F. H; GRIBELYUK, M; KIM, Y et al.Physica status solidi. A. Applied research. 1995, Vol 150, Num 1, pp 31-50, issn 0031-8965Article

Gas source molecular beam epitaxy growth of heterojunction bipolar transistors containing 1 monolayer δ-BeCUNNINGHAM, J. E; KUO, T. Y; OURMAZD, A et al.Journal of crystal growth. 1991, Vol 111, Num 1-4, pp 515-520, issn 0022-0248Conference Paper

Chemical mapping of semiconductor interfaces at near-atomic resolutionOURMAZD, A; TAYLOR, D. W; CUNNINGHAM, J et al.Physical review letters. 1989, Vol 62, Num 8, pp 933-936, issn 0031-9007Article

An approach to quantitative high-resolution transmission electron microscopy of crystalline materialsKISIELOWSKI, C; SCHWANDER, P; BAUMANN, F. H et al.Ultramicroscopy. 1995, Vol 58, Num 2, pp 131-155, issn 0304-3991Article

Quantitative microscopy of thin filmsKISIELOWSKI, C; SCHWANDER, P; KIM, Y et al.Physica status solidi. A. Applied research. 1993, Vol 137, Num 2, pp 557-567, issn 0031-8965Article

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