THE ELECTRICAL RECOMBINATION EFFICIENCY OF INDIVIDUAL EDGE DISLOCATIONS AND STACKING FAULT DEFECTS IN N-TYPE SILICONOURMAZD A; BOOKER GR.1979; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1979; VOL. 55; NO 2; PP. 771-784; ABS. GER; BIBL. 22 REF.Article

The electrical properties of dislocations in semiconductorsOURMAZD, A.Contemporary physics. 1984, Vol 25, Num 3, pp 251-268, issn 0010-7514Article

Electronic structure of oxygen thermal donors in siliconROBERTSON, J; OURMAZD, A.Applied physics letters. 1985, Vol 46, Num 6, pp 559-561, issn 0003-6951Article

Trends and limits in monolithic integration by increasing the die areaWARWICK, C. A; OURMAZD, A.IEEE transactions on semiconductor manufacturing. 1993, Vol 6, Num 3, pp 284-289, issn 0894-6507Article

Observation of order-disorder transitions in strained-semiconductor systemsOURMAZD, A; BEAN, J. C.Physical review letters. 1985, Vol 55, Num 7, pp 765-768, issn 0031-9007Article

Phosphorus gettering and intrinsic gettering of nickel in siliconOURMAZD, A; SCHRÖTER, W.Applied physics letters. 1984, Vol 45, Num 7, pp 781-783, issn 0003-6951Article

ENHANCEMENT OF BIREFRINGENCE IN POLARISATION-MAINTAINING FIBRES BY THERMAL ANNEALINGOURMAZD A; BIRCH RD; VARNHAM MP et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 4; PP. 143-144; BIBL. 4 REF.Article

Scaling the Si MOSFET : from bulk to SOI to bulkRAN-HONG YAN; OURMAZD, A; LEE, K. F et al.I.E.E.E. transactions on electron devices. 1992, Vol 39, Num 7, pp 1704-1710, issn 0018-9383Article

Oxygen-related thermal donors in silicon: a new structural and kinetic modelOURMAZD, A; SCHRÖTER, W; BOURRET, A et al.Journal of applied physics. 1984, Vol 56, Num 6, pp 1670-1681, issn 0021-8979Article

Interaction of energetic ions with inhomogeneous solidsBODE, M; OURMAZD, A; CUNNINGHAM, J et al.Physical review letters. 1991, Vol 67, Num 7, pp 843-846, issn 0031-9007Article

Low temperature interdiffusion in the HgCdTe/CdTe system, studied at near-atomic resolutionKIM, Y; OURMAZD, A; FELDMAN, R. D et al.Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1990, Vol 8, Num 2, pp 1116-1119, issn 0734-2101Article

Lattice and atomic structure imaging of semiconductors by high resolution transmission electron microscopyOURMAZD, A; AHLBORN, K; IBEH, K et al.Applied physics letters. 1985, Vol 47, Num 7, pp 685-688, issn 0003-6951Article

Direct resolution and identification of the sublattices in compound semiconductors by high-resolution transmission electron microscopyOURMAZD, A; RENTSCHLER, J. R; TAYLOR, D. W et al.Physical review letters. 1986, Vol 57, Num 24, pp 3073-3076, issn 0031-9007Article

High resolution composition profiles of multilayersBAUMANN, F. H; GRIBELYUK, M; KIM, Y et al.Physica status solidi. A. Applied research. 1995, Vol 150, Num 1, pp 31-50, issn 0031-8965Article

Gas source molecular beam epitaxy growth of heterojunction bipolar transistors containing 1 monolayer δ-BeCUNNINGHAM, J. E; KUO, T. Y; OURMAZD, A et al.Journal of crystal growth. 1991, Vol 111, Num 1-4, pp 515-520, issn 0022-0248Conference Paper

Chemical mapping of semiconductor interfaces at near-atomic resolutionOURMAZD, A; TAYLOR, D. W; CUNNINGHAM, J et al.Physical review letters. 1989, Vol 62, Num 8, pp 933-936, issn 0031-9007Article

An approach to quantitative high-resolution transmission electron microscopy of crystalline materialsKISIELOWSKI, C; SCHWANDER, P; BAUMANN, F. H et al.Ultramicroscopy. 1995, Vol 58, Num 2, pp 131-155, issn 0304-3991Article

Quantitative microscopy of thin filmsKISIELOWSKI, C; SCHWANDER, P; KIM, Y et al.Physica status solidi. A. Applied research. 1993, Vol 137, Num 2, pp 557-567, issn 0031-8965Article

Bragg diffraction by amorphous siliconPHILLIPS, J. C; BEAN, J. C; WILSON, B. A et al.Nature (London). 1987, Vol 325, Num 6100, pp 121-125, issn 0028-0836Article

Structure of isolated biomolecules obtained from ultrashort x-ray pulses : exploiting the symmetry of random orientationsSALDIN, D. K; SHNEERSON, V. L; FUNG, R et al.Journal of physics. Condensed matter (Print). 2009, Vol 21, Num 13, issn 0953-8984, 134014.1-134014.11Article

Mapping projected potential, interfacial roughness, and composition in general crystalline solids by quantitative transmission electron microscopySCHWANDER, P; KISIELOWSKI, C; SEIBT, M et al.Physical review letters. 1993, Vol 71, Num 25, pp 4150-4153, issn 0031-9007Article

Interfaces in GaAs/AlAs : perfection and applicationsBODE, M. H; OURMAZD, A.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 4, pp 1787-1792, issn 0734-211XConference Paper

Morphology of GaAs-quantum-well interface grown by liquid-phase epitaxyMORLOCK, U; CHRISTEN, J; BIMBERG, D et al.Physical review. B, Condensed matter. 1991, Vol 44, Num 16, pp 8792-8797, issn 0163-1829Article

Characterization of pseudomorphic InGaAs channel modulation-doped field-effect-transistor structures grown by molecular-beam epitaxyKOPF, R. F; KUO, J. M; KOVALCHICK, J et al.Journal of applied physics. 1990, Vol 68, Num 8, pp 4029-4034, issn 0021-8979, 6 p.Article

Determination of the atomic configuration at semiconductor interfacesOURMAZD, A; TSANG, W. T; RENTSCHLER, J. A et al.Applied physics letters. 1987, Vol 50, Num 20, pp 1417-1419, issn 0003-6951Article