DISPOSITIVI DI MEMORIA A SEMICONDUTTORI AMORFI E LORO AFFIDABILITA = DISPOSITIFS DE MEMOIRES A SEMICONDUCTEURS AMORPHES ET LEUR FIABILITEBIEY D; MAINO G.1973; ELETTRON. E TELECOMUNIC.; ITAL.; DA. 1973; VOL. 22; NO 2; PP. 53-58; ABS. ANGL.; BIBL. 10 REF.Serial Issue

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SET to RESET programming in phase change memoriesKARPOV, Ilya V; KOSTYLEV, Sergey A.IEEE electron device letters. 2006, Vol 27, Num 10, pp 808-810, issn 0741-3106, 3 p.Article

Hot-electron conduction in ovonic materialsJACOBONI, Carlo; PICCININI, Enrico; BUSCEMI, Fabrizio et al.Solid-state electronics. 2013, Vol 84, pp 90-95, issn 0038-1101, 6 p.Conference Paper

Integrating Phase-Change Memory Cell With Ge Nanowire Diode for Crosspoint Memory : Experimental Demonstration and AnalysisKIM, Sangbum; YUAN ZHANG; MCVITTIE, James P et al.I.E.E.E. transactions on electron devices. 2008, Vol 55, Num 9, pp 2307-2313, issn 0018-9383, 7 p.Article

Analysis of temperature in phase change memory scalingKIM, Sangbum; WONG, H.-S. Philip.IEEE electron device letters. 2007, Vol 28, Num 8, pp 697-699, issn 0741-3106, 3 p.Article