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PROPRIETES DE COUCHES MINCES A BASE DE MELANGES D'OXYDES DE TITANE, DE NIOBIUM ET DE ZIRCONIUM OBTENUS PAR PULVERISATION CATHODIQUEMOTOVILOV OA; RUDINA OG; TUROVSKAYA TS et al.1978; OPT.-MEKH. PROMYSHL.; S.S.S.R.; DA. 1978; VOL. 45; NO 3; PP. 47-49; BIBL. 3 REF.Article

ETUDE AU MOYEN D'UN MICROSCOPE ELECTRONIQUE A EMISSION DE CHAMP DU TRAVAIL DE SORTIE DE TUNGSTENE RECOUVERT PAR UNE COUCHE MINCE DE L'OXYDE DE SILICIUM ET TANTALEBOBEV K; MIREVA Z.1972; IZVEST. INST. ELEKTRON., SOFIJA; BALG.; DA. 1972; VOL. 6; PP. 29-34; ABS. RUSSE ANGL.; BIBL. 5 REF.Serial Issue

MICROSCOPIE ELECTRONIQUE A EMISSION DE CHAMP DU TUNGSTENE RECOUVERT PAR UNE MINCE COUCHE DE L'OXYDE DE SILICIUMBOBEV K; MIREVA Z; BOYADZHIJSKA M et al.1972; IZVEST. INST. ELEKTRON., SOFIJA; BALG.; DA. 1972; VOL. 6; PP. 35-46; ABS. RUSSE ANGL.; BIBL. 22 REF.Serial Issue

30SIO IN THE INTERSTELLAR MEDIUM.CLARK FO; LOVAS FJ.1977; ASTROPHYS. J.; U.S.A.; DA. 1977; VOL. 217; NO 1 PART. 2; PP. L47-L48; BIBL. 10 REF.Article

OBSERVATIONS OF INTERSTELLAR SILICON MONOXIDE.DICKINSON DF; GOTTLIEB CA; GOTTLIEB EW et al.1976; ASTROPHYS. J.; U.S.A.; DA. 1976; VOL. 206; NO 1 PART. 1; PP. 79-84; BIBL. 23 REF.Article

NITROGEN-SILICON REACTION AND ITS INFLUENCE ON THE DIELECTRIC STRENGTH OF THERMAL SILICON DIOXIDE.VROMEN BH.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 27; NO 3; PP. 152-154; BIBL. 6 REF.Article

BREAKDOWN MECHANISM OF EXTREMELY THIN SIO FILMS.TSUCHIDA N; UEDA M.1974; IN: CONF. ELECTR. INSUL. DIELECTR. PHENOM. 42ND ANNU. MEET.; VARENNES, QUE.; 1973; WASHINGTON, D.C.; NATL. ACAD. SCI.; DA. 1974; PP. 200-207; BIBL. 4 REF.Conference Paper

DEFAUTS DUS AU RAYONNEMENT DANS LES COUCHES DE SIO2 ET GEO2 BOMBARDEES PAR DES ELECTRONS RAPIDESAKIMCHENKO IP; KRASNOPEVTSEV VV; MILYUTIN YU V et al.1973; MIKROELEKTRONIKA; S.S.S.R.; DA. 1973; VOL. 2; NO 1; PP. 76-79; BIBL. 9 REF.Serial Issue

IMPURITY INCORPORATION DURING RF SPUTTERING OF SILICON OXIDE LAYERSPETERSSON S; LINKER G; MEYER O et al.1972; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1972; VOL. 14; NO 2; PP. 605-611; ABS. ALLEM.; BIBL. 9 REF.Serial Issue

METHODE D'OBTENTION DES SPECTRES D'ABSORPTION DES SILICES MODIFIEESFILIPPOV AP; KARPENKO GA.1978; TEOR. EKSPER. KHIM., USSR; SUN; DA. 1978; VOL. 14; NO 3; PP. 419-423; BIBL. 2 REF.Article

ETUDE DE LA RESISTANCE ELECTRIQUE DE COUCHES MINCES DE CERMET PT-SIO A FAIBLES TENEURS EN METAL EN COURANT ALTERNATIFPINGUET J; SEN SIK MINN.1972; C.R. ACAD. SCI., B; FR.; DA. 1972; VOL. 275; NO 8; PP. 287-290; BIBL. 7 REF.Serial Issue

INDEX OF REFRACTION OF STEAM GROWN OXIDE ON SILICONTAFT EA.1980; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1980; VOL. 127; NO 4; PP. 993-994; BIBL. 4 REF.Article

LIFETINE EFFECTS OF POSITRONIUM IN POWDERS.FORD GW; SANDER LM; WITTEN TA et al.1976; PHYS. REV. LETTERS; U.S.A.; DA. 1976; VOL. 36; NO 21; PP. 1269-1272; BIBL. 16 REF.Article

THRESHOLD FOR RADIATION EFFECTS IN SILICAPRIMAK W.1972; PHYS. REV., B; U.S.A.; DA. 1972; VOL. 6; NO 12; PP. 4846-4851; BIBL. 21 REF.Serial Issue

EFFET D'UNE IRRADIATION IONIQUE SUR LE CONDUCTANCE ELECTRIQUE DE COUCHES DE SIO2SHITOVA EH V; ZORIN EI; PAVLOV PV et al.1972; MIKROELEKTRONIKA; S.S.S.R.; DA. 1972; VOL. 1; NO 3; PP. 273-274; BIBL. 3 REF.Serial Issue

IMPACT IONIZATION IN SILICON DIOXIDE.FERRY DK.1976; SOLID STATE COMMUNIC.; G.B.; DA. 1976; VOL. 18; NO 8; PP. 1051-1053; BIBL. 25 REF.Article

KBETA X-RAY EMISSION SPECTRA OF SI AND SIO2.KARRAS M; JUSLEN R; GRAEFFE G et al.1975; APPL. PHYS.; GERM.; DA. 1975; VOL. 6; NO 2; PP. 185-187; BIBL. 9 REF.Article

THE DIFFUSION OF BORON IN THE SI-SIO2 SYSTEMWILSON PR.1972; SOLID-STATE ELECTRON.; G.B.; DA. 1972; VOL. 15; NO 9; PP. 961-970; BIBL. 11 REF.Serial Issue

SPECTRE RPE DES IMPURETES D'IONS FE3+ DANS LES SILICOGELSBELETSKIJ IP; GORLOV YU I; CHUJKO AA et al.1980; TEOR. EKSPER. KHIM.; UKR; DA. 1980; VOL. 16; NO 2; PP. 273-276; BIBL. 8 REF.Article

STRUCTURE ELECTRONIQUE DES OXYANIONS OCTAEDRIQUES DE AL ET SIBRYTOV IA; ROMASHCHENKO YU N; SHCHEGOLEV BF et al.1979; ZH. STRUKT. KHIM.; SUN; DA. 1979; VOL. 20; NO 2; PP. 227-234; BIBL. 13 REF.Article

DIELECTRIC BREAKDOWN IN ELECTRICALLY STRESSED THIN FILMS OF THERMAL SIO2.HARARI E.1978; J. APPL. PHYS.; USA; DA. 1978; VOL. 49; NO 4; PP. 2478-2489; BIBL. 31 REF.Article

DIFFUSION OF GA INTO SI THROUGH SIO2.JAIN GC; PRASAD A; CHAKRAVARTY BC et al.1978; PHYS. STATUS SOLIDI, A; DDR; DA. 1978; VOL. 46; NO 2; PP. K151-K155; BIBL. 14 REF.Article

DETECTION OF NEW STELLAR SOURCES OF VIBRATIONALLY EXCITED SILICON MONOXIDE MASER EMISSION AT 6.95 MILLIMETERS.SNYDER LE; BUHL D.1975; ASTROPHYS. J.; U.S.A.; DA. 1975; VOL. 197; NO 2 PART. 1; PP. 329-340; BIBL. 1 P.Article

ELECTRON TRANSPORT AT HIGH FIELDS IN A-SIO2.FERRY DK.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 27; NO 12; PP. 689-690; BIBL. 17 REF.Article

INCREASED EMISSION EFFICIENCY FROM A THIN FILM COLD CATHODE BY THE USE OF DISCONTINUOUS COUNTERELECTRODES.GOULD RD; HOGARTH CA.1975; THIN SOLID FILMS; NETHERL.; DA. 1975; VOL. 30; NO 1; PP. 131-135; BIBL. 18 REF.Article

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