ELECTRICAL PROPERTIES OF A TRIODE-LIKE SILICON VERTICAL-CHANNEL JFETOZAWA O.1980; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 11; PP. 2115-2123; BIBL. 19 REF.Article

A MULTI-CHANNEL FET WITH A NEW DIFFUSION TYPE STRUCTURE.OZAWA O; AOKI K.1976; JAP. J. APPL. PHYS.; JAP.; DA. 1976; VOL. 15; SUPPL. 1; PP. 171-177; BIBL. 13 REF.; (CONF. SOLID STATE DEVICES. 7. PROC.; TOKYO; 1975)Conference Paper

APPLICATION OF MOSI₂ TO THE DOUBLE-LEVEL INTERCONNECTIONS OF I²L CIRCUITS.SASAKI Y; OZAWA O.1980; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1980; VOL. 15; NO 4; PP. 450-454; BIBL. 13 REF.Article

APPLICATION OF MOSI₂ TO THE DOUBLE-LEVEL INTERCONNECTIONS OF I²L CIRCUITSSASAKI Y; OZAWA O; KAMEYAMA S et al.1980; IEEE TRANS. ELECTRON. DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 8; PP. 1385-1389; BIBL. 13 REF.Article

GROWTH INHIBITION OF HEATED CELLS OF ESCHERICHIA COLI BY TYLOSINTSUCHIDO T; OZAWA O; SHIBASAKI I et al.1975; J. FERMENT. TECHNOL.; JAP.; DA. 1975; VOL. 53; NO 6; PP. 363-371; BIBL. 15 REF.Article

A 1-Mbit CMOS DRAM with fast page mode and static column modeSAITO, S; FUJII, S; OKADA, Y et al.IEEE journal of solid-state circuits. 1985, Vol 20, Num 5, pp 903-908, issn 0018-9200Article

A low-power bus 100 ns 256 K bit dynamic RAMFUJII, S; NATORI, K; FURUYAMA, T et al.IEEE journal of solid-state circuits. 1983, Vol 18, Num 5, pp 441-445, issn 0018-9200Article

Purification and properties of a β-galactosidase with high galactosyl transfer activity from Cryptococcus laurentii OKN-4OHTSUKA, K; TANOH, A; OZAWA, O et al.Journal of fermentation and bioengineering. 1990, Vol 70, Num 5, pp 301-307, issn 0922-338X, 7 p.Article

Electrical properties for MOS LSI's fabricated using stacked oxide SWAMI technologySAWADA, S; HIGUCHI, T; MIZUNO, T et al.I.E.E.E. transactions on electron devices. 1985, Vol 32, Num 11, pp 2243-2248, issn 0018-9383Article

Characterization of levansucrase from Rahnella aquatilis JCM-1683OHTSUKA, K; HINO, S; FUKUSHIMA, T et al.Bioscience, biotechnology, and biochemistry. 1992, Vol 56, Num 9, pp 1373-1377, issn 0916-8451Article

Characterization of restriction endonuclease BdiSI, and isoschizomer of SfeI, from Bacteroides distasonis strain S-7MURAKAMI, M; OZAWA, O; KANEMATSU, T et al.Agricultural and biological chemistry. 1991, Vol 55, Num 1, pp 261-263, issn 0002-1369Article

Preparation of 4'-galactosyllactose derivatives and their utilization by bifidobacteriaOZAWA, O; NAKAMURA, Y; OHTSUKA, K et al.Nippon Shokuhin Kogyo Gakkai-Shi. 1991, Vol 38, Num 12, pp 1086-1092, issn 0029-0394Article

A 5000-CHANNEL POWER FET WITH A NEW DIFFUSED GATE STRUCTURE.OZAWA O; SASAKI Y; IWASAKI H et al.1975; IN: INT. ELECTRON DEVICES MEET.; WASHINGTON, D.C.; 1975; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1975; PP. 163-166; BIBL. 3 REF.Conference Paper

4'-galactosyllactose production in a jar fermentor by Cryptococcus laurentii OKN-4OZAWA, O; OHTSUKA, K; UCHIDA, T et al.Journal of fermentation and bioengineering. 1991, Vol 72, Num 4, pp 309-310, issn 0922-338XArticle

A new restriction endonuclease from bacteroides distasonis (BdiI)MURAKAMI, M; OZAWA, O; KANEMATSU, T et al.Agricultural and biological chemistry. 1990, Vol 54, Num 1, pp 275-277, issn 0002-1369, 3 p.Article

A 50-μA standby 1M×1/256K×4 CMOS DRAM with high-speed sense amplifierFUJII, S; SAITO, S; OKADA, Y et al.IEEE journal of solid-state circuits. 1986, Vol 21, Num 5, pp 643-648, issn 0018-9200Article

An optimized and reliable LDD structure for 1-μm NMOSFET based on substrate current analysisMATSUMOTO, Y; HIGUCHI, T; MIZUNO, T et al.I.E.E.E. transactions on electron devices. 1985, Vol 32, Num 2, pp 429-433, issn 0018-9383Article