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Nickel germanosilicide contacts formed on heavily boron doped Si_1-xGe_x source/drain junctions for nanoscale CMOSJING LIU; OZTURK, Mehmet C.I.E.E.E. transactions on electron devices. 2005, Vol 52, Num 7, pp 1535-1540, issn 0018-9383, 6 p.Article

Tuning of the Platinum Silicide Schottky Barrier Height on n-Type Silicon by Sulfur SegregationALPTEKIN, Emre; OZTURK, Mehmet C; MISRA, Veena et al.IEEE electron device letters. 2009, Vol 30, Num 4, pp 331-333, issn 0741-3106, 3 p.Article

Platinum Germanosilicide Contacts Formed on Strained and Relaxed Si_1―xGe_x LayersALPTEKIN, Emre; KIRKPATRICK, Casey Joe; MISRA, Veena et al.I.E.E.E. transactions on electron devices. 2009, Vol 56, Num 6, pp 1220-1227, issn 0018-9383, 8 p.Article

In situ selectivity and thickness monitoring during selective silicon epitaxy using quadrupole mass spectrometry and waveletsRYING, Eric A; ÖZTÜRK, Mehmet C; BILBRO, Griff L et al.IEEE transactions on semiconductor manufacturing. 2005, Vol 18, Num 1, pp 112-121, issn 0894-6507, 10 p.Article

Arsenic redistribution during rapid thermal chemical vapor deposition of TiSi₂ on SiHUA FANG; OZTÜRK, Mehmet C; O'NEIL, Patricia A et al.Journal of the Electrochemical Society. 2001, Vol 148, Num 2, pp G43-G49, issn 0013-4651Article

Advanced gate stack, source/drain and channel engineering for Si-based CMOS : naw materials, processes, and equipment (Quebec PQ, 16-18 May 2005)Gusev, Evgeni P; Iwai, Hiroshi; Öztürk, Mehmet C et al.Proceedings - Electrochemical Society. 2005, issn 0161-6374, isbn 1-56677-463-2, XV, 634 p, isbn 1-56677-463-2Conference Proceedings

Advanced CMOS devices: Part I conventional devices and technology optionsWONG, H.-S. Philip.Proceedings - Electrochemical Society. 2005, pp 3-12, issn 0161-6374, isbn 1-56677-463-2, 10 p.Conference Paper

Nickel thin film deposition using Ni (PF₃)₄ for LSI electrodeISHIKAWA, Masato; MACHIDA, Hideaki; OGURA, Atsushi et al.Proceedings - Electrochemical Society. 2005, pp 612-619, issn 0161-6374, isbn 1-56677-463-2, 8 p.Conference Paper

High purity iridium thin films depositions using the inorganic IrF₆DUSSARRA, Christian; GATINEAU, Julien.Proceedings - Electrochemical Society. 2005, pp 354-359, issn 0161-6374, isbn 1-56677-463-2, 6 p.Conference Paper

Suppression of interfacial reactions in tungsten /hafina /germanium structure by water vapor dischargeMURAOKA, Kouichi.Proceedings - Electrochemical Society. 2005, pp 523-528, issn 0161-6374, isbn 1-56677-463-2, 6 p.Conference Paper

Optimizing channel strain and dislocations in PMOS transistors with local epitaxial SiGeCHIDAMBARAM, P. R; CHAKRAVARTHI, Srinivasan; MACHALA, Charles et al.Proceedings - Electrochemical Society. 2005, pp 437-445, issn 0161-6374, isbn 1-56677-463-2, 9 p.Conference Paper

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Thermal processing and mobility in strained heterostructures on insulatorABERG, Ingvar; NI CHLEIRIGH, Cait; HOYT, Judy L et al.Proceedings - Electrochemical Society. 2005, pp 505-514, issn 0161-6374, isbn 1-56677-463-2, 10 p.Conference Paper

Using surface chemistry for defect engineering in ultrashallow junction formationSEEBAUER, E. G.Proceedings - Electrochemical Society. 2005, pp 33-42, issn 0161-6374, isbn 1-56677-463-2, 10 p.Conference Paper

Characteristics of Hf(Si,O) gate dielectrics as a function of Hf contentCHANG, K; SHALLENBERGER, J; CHANG, F.-M et al.Proceedings - Electrochemical Society. 2005, pp 404-410, issn 0161-6374, isbn 1-56677-463-2, 7 p.Conference Paper

In-situ observation of meta-induced crystallization of amorphous Si_0.8Ge_0.2 thin filmsYU, C. H; WU, W. W; CHEN, L. J et al.Proceedings - Electrochemical Society. 2005, pp 569-574, issn 0161-6374, isbn 1-56677-463-2, 6 p.Conference Paper

Improvement of electrical properties of high-k strontium tantalate films for gate dielelectric applicationsLISKER, M; SAINSKAS, M; KALKOFEN, B et al.Proceedings - Electrochemical Society. 2005, pp 426-433, issn 0161-6374, isbn 1-56677-463-2, 8 p.Conference Paper

Structural and electrical characterization of zirconium oxide thin films deposited by MOCVDLISKER, M; SILINSKAS, M; MATICHYN, S et al.Proceedings - Electrochemical Society. 2005, pp 418-425, issn 0161-6374, isbn 1-56677-463-2, 8 p.Conference Paper

The enhancement of poly activation by laser annealingYUANNING CHEN; JAIN, Amitabh; HU, Jerry et al.Proceedings - Electrochemical Society. 2005, pp 171-178, issn 0161-6374, isbn 1-56677-463-2, 8 p.Conference Paper

Characterization of ultra-shallow implanted P⁺ layer on p-type silicon substrates after flash anneal and conventional rapid thermal annealSUZUKI, Tadashi; SETO, Masatoshi; SUZUKI, Norio et al.Proceedings - Electrochemical Society. 2005, pp 68-75, issn 0161-6374, isbn 1-56677-463-2, 8 p.Conference Paper

Metal gated self-aligned gate-forward nMOSFET with ≤0.8 nm EOT fabricated by in-situ Ar/O₂ plasma oxidation of PVD HfKOVESHNIKOV, Sergei; TSAI, Wilman; MANHONG ZHANG et al.Proceedings - Electrochemical Society. 2005, pp 274-281, issn 0161-6374, isbn 1-56677-463-2, 8 p.Conference Paper

Interstitial oxygen defect at Si surface on electrical ofh aracteristics F high-k gated MOS devicesCHANG-LIAO, K. S; CHENG, C. L; WANG, T. K et al.Proceedings - Electrochemical Society. 2005, pp 347-353, issn 0161-6374, isbn 1-56677-463-2, 7 p.Conference Paper

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