kw.\*:("Ohmic contact")
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Structural analysis of Au-Ni-Ge and Au-Ag-Ge alloyed ohmic contacts on modulation-doped AlGaAs-GaAs heterostructureHIGMAN, T. K; EMANUEL, M. A; COLEMAN, J. J et al.Journal of applied physics. 1986, Vol 60, Num 2, pp 677-680, issn 0021-8979Article
Interface analysis of Ti/Al/Ti/Au ohmic contacts with regrown n+-GaN layers using molecular beam epitaxySEO, Hui-Chan; SIVARAMAKRISHNAN, Shankar; ZUO, Jian-Min et al.Surface and interface analysis. 2011, Vol 43, Num 13, pp 1627-1631, issn 0142-2421, 5 p.Article
W2B-based ohmic contacts to n-GaNKHANNA, Rohit; PEARTON, S. J; REN, F et al.Applied surface science. 2005, Vol 252, Num 5, pp 1826-1832, issn 0169-4332, 7 p.Article
Thermal degradation of Ni-based Schottky contacts on 6H―SiCBARDA, Bohumil; MACHAC, Petr; CICHONN, Stanislav et al.Applied surface science. 2011, Vol 257, Num 9, pp 4418-4421, issn 0169-4332, 4 p.Article
Non-alloyed ohmic contact to n-GaAs by solid phase epitaxyMARSHALL, E. D; CHEN, W. X; WU, C. S et al.Applied physics letters. 1985, Vol 47, Num 3, pp 298-300, issn 0003-6951Article
Study of the contact resistance of electroless Ni-B doped silicon using sodium borohydride as reducing agentSINGH, B. K; ANURADHA CHATTERJEE; DAW, A. N et al.Journal of the Electrochemical Society. 1989, Vol 136, Num 3, pp 785-787, issn 0013-4651, 3 p.Article
Investigation of palladium as a barrier to gold diffusion in sintered ohmic contacts to n-GaAsPRASAD, K; FARAONE, L; NASSIBIAN, A. G et al.Semiconductor science and technology. 1989, Vol 4, Num 8, pp 657-662, issn 0268-1242Article
Characterization of alloyed AuGe/Ni/Au ohmic contacts to n-doped GaAs by measurement of transfer length and under the contact sheet resistanceHENRY, H. G.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 7, pp 1390-1393, issn 0018-9383, 4 p.Article
AU-Be/Au and AU-Be/Cr/Au ohmic contacts to p-type InP and InGaAsPMALINA, V; VOGEL, K; ZELINKA, J et al.Semiconductor science and technology. 1988, Vol 3, Num 10, pp 1015-1021, issn 0268-1242Article
Interdiffusion profiles of AuGe/n-GaAs ohmic contacts studied by AESJUNG, T; NEBAUER, E.Physica status solidi. A. Applied research. 1983, Vol 77, Num 2, pp K203-K206, issn 0031-8965Article
Réalisation de contacts ohmiques sur GaAs par des méthodes de recuits de très courte durée = Fabrication of ohmic contacts on GaAs by very short time annealing methodsMARTIN, G. M; MAKRAM-EBEID, S; BARBIER et al.1983, 48 p.Report
Stable ohmic contacts to n-GaAs using ion-beam mixingSMITH, S. R; SOLOMON, J. S.Materials letters (General ed.). 1985, Vol 3, Num 7-8, pp 294-298, issn 0167-577XArticle
Extremely low resistance ohmic contacts to n-GaAs for AlGaAs/GaAs heterojunction bipolar transistorsITO, H; ISHIBASHI, T; SUGETA, T et al.Japanese journal of applied physics. 1984, Vol 23, Num 8, pp L635-L637, issn 0021-4922, 2Article
Temperature dependence of transient and conventional annealed AlGaAs/GaAs MODFET ohmic contactsIKOSSI-ANASTASIOU, K; EZIS, A; RAI, A. K et al.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 11, pp 1786-1792, issn 0018-9383, 1Article
Fast alloying technique for improved ohmic contacts to n-GaAsMOIZES, I.Solid-state electronics. 1984, Vol 27, Num 10, pp 925-926, issn 0038-1101Article
High-resolution transmission electron microscope studies of an Al-Ge-Ni Ohmic contact to GaAsGRAHAM, R. J; ERKAYA, H. H; EDWARDS, J. L et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1988, Vol 6, Num 5, pp 1502-1505, issn 0734-211XArticle
Development of Ohmic contact materials for GaAs integrated circuitsMURAKAMI, Masanori.Materials science reports. 1990, Vol 5, Num 6, issn 0920-2307, 45 p.Serial Issue
Contact resistance monitor for silicon integrated circuitsFAITH, T. J; IRVEN, R. S; REED, L. H et al.Journal of vacuum science and technology. A, vacuum, surfaces, and films. 1984, Vol 2, Num 1, pp 54-57Article
Experimental investigation on nonlinearities of PIN photodiodesYANLI ZHAO.Microelectronics journal. 2006, Vol 37, Num 6, pp 534-536, issn 0959-8324, 3 p.Article
Influence of the Au interlayer on the contact resistance and morphology of CdTe films deposited on molybdenum substrateHERNANDEZ, German P; JUAREZ, A. S; RESENDIZ, M. C et al.Solar energy materials and solar cells. 2006, Vol 90, Num 15, pp 2289-2296, issn 0927-0248, 8 p.Conference Paper
New contact resistivity characterization method for non-uniform ohmic contacts on GaNJANG, T; KWAK, J. S; NAM, O. H et al.Solid-state electronics. 2006, Vol 50, Num 3, pp 433-436, issn 0038-1101, 4 p.Article
RADIATION-INDUCED DEGRADATION OF OHMIC CONTACTS.BLUNDELL R; MORGAN DV; HOWES MJ et al.1977; ELECTRON. LETTERS; G.B.; DA. 1977; VOL. 13; NO 16; PP. 483-484; BIBL. 5 REF.Article
808nm semiconductor laser ohmic-contact technologyWANG, Y; ZHANG, B; WANG, L et al.SPIE proceedings series. 1998, pp 75-78, isbn 0-8194-3008-0Conference Paper
OHMIC CONTACTS TO GAASMITRA RN; ROY SB; DAW AN et al.1979; J. SCI. INDUSTR. RES.; IND; DA. 1979; VOL. 38; NO 8; PP. 410-413; BIBL. 31 REF.Article
Differing morphologies of textured diamond films with electrical properties made with microwave plasma chemical vapor depositionWEN CHI LAI; WU, Yu-Shiang; CHANG, Hou-Cheng et al.Applied surface science. 2010, Vol 257, Num 5, pp 1729-1735, issn 0169-4332, 7 p.Article