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Results 1 to 25 of 2261

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Structural analysis of Au-Ni-Ge and Au-Ag-Ge alloyed ohmic contacts on modulation-doped AlGaAs-GaAs heterostructureHIGMAN, T. K; EMANUEL, M. A; COLEMAN, J. J et al.Journal of applied physics. 1986, Vol 60, Num 2, pp 677-680, issn 0021-8979Article

Interface analysis of Ti/Al/Ti/Au ohmic contacts with regrown n+-GaN layers using molecular beam epitaxySEO, Hui-Chan; SIVARAMAKRISHNAN, Shankar; ZUO, Jian-Min et al.Surface and interface analysis. 2011, Vol 43, Num 13, pp 1627-1631, issn 0142-2421, 5 p.Article

W2B-based ohmic contacts to n-GaNKHANNA, Rohit; PEARTON, S. J; REN, F et al.Applied surface science. 2005, Vol 252, Num 5, pp 1826-1832, issn 0169-4332, 7 p.Article

Thermal degradation of Ni-based Schottky contacts on 6H―SiCBARDA, Bohumil; MACHAC, Petr; CICHONN, Stanislav et al.Applied surface science. 2011, Vol 257, Num 9, pp 4418-4421, issn 0169-4332, 4 p.Article

PdSi based ohmic contact on n-InPWEN CHANG HUANG; CHIA TSUNG HORNG; SHR SHIN TSAI et al.Applied surface science. 2009, Vol 255, Num 20, pp 8464-8469, issn 0169-4332, 6 p.Article

Non-alloyed ohmic contact to n-GaAs by solid phase epitaxyMARSHALL, E. D; CHEN, W. X; WU, C. S et al.Applied physics letters. 1985, Vol 47, Num 3, pp 298-300, issn 0003-6951Article

Study of the contact resistance of electroless Ni-B doped silicon using sodium borohydride as reducing agentSINGH, B. K; ANURADHA CHATTERJEE; DAW, A. N et al.Journal of the Electrochemical Society. 1989, Vol 136, Num 3, pp 785-787, issn 0013-4651, 3 p.Article

Investigation of palladium as a barrier to gold diffusion in sintered ohmic contacts to n-GaAsPRASAD, K; FARAONE, L; NASSIBIAN, A. G et al.Semiconductor science and technology. 1989, Vol 4, Num 8, pp 657-662, issn 0268-1242Article

Characterization of alloyed AuGe/Ni/Au ohmic contacts to n-doped GaAs by measurement of transfer length and under the contact sheet resistanceHENRY, H. G.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 7, pp 1390-1393, issn 0018-9383, 4 p.Article

AU-Be/Au and AU-Be/Cr/Au ohmic contacts to p-type InP and InGaAsPMALINA, V; VOGEL, K; ZELINKA, J et al.Semiconductor science and technology. 1988, Vol 3, Num 10, pp 1015-1021, issn 0268-1242Article

Interdiffusion profiles of AuGe/n-GaAs ohmic contacts studied by AESJUNG, T; NEBAUER, E.Physica status solidi. A. Applied research. 1983, Vol 77, Num 2, pp K203-K206, issn 0031-8965Article

Réalisation de contacts ohmiques sur GaAs par des méthodes de recuits de très courte durée = Fabrication of ohmic contacts on GaAs by very short time annealing methodsMARTIN, G. M; MAKRAM-EBEID, S; BARBIER et al.1983, 48 p.Report

Electron beam annealed Ge-WSi-Au and Ge-Ni-WSi-Au high temperature stable ohmic contacts on n-GaAsWÜRFL, J; NASSIBIAN, A. G; HARTNAGEL, H. L et al.International journal of electronics. 1989, Vol 66, Num 2, pp 213-225, issn 0020-7217, 13 p.Article

Ohmic contact to p-type GaN using a novel Ni/Cu schemeLIU, S. H; HWANG, J. M; HWANG, Z. H et al.Applied surface science. 2003, Vol 212-13, pp 907-911, issn 0169-4332, 5 p.Conference Paper

Stable ohmic contacts to n-GaAs using ion-beam mixingSMITH, S. R; SOLOMON, J. S.Materials letters (General ed.). 1985, Vol 3, Num 7-8, pp 294-298, issn 0167-577XArticle

Extremely low resistance ohmic contacts to n-GaAs for AlGaAs/GaAs heterojunction bipolar transistorsITO, H; ISHIBASHI, T; SUGETA, T et al.Japanese journal of applied physics. 1984, Vol 23, Num 8, pp L635-L637, issn 0021-4922, 2Article

Temperature dependence of transient and conventional annealed AlGaAs/GaAs MODFET ohmic contactsIKOSSI-ANASTASIOU, K; EZIS, A; RAI, A. K et al.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 11, pp 1786-1792, issn 0018-9383, 1Article

Fast alloying technique for improved ohmic contacts to n-GaAsMOIZES, I.Solid-state electronics. 1984, Vol 27, Num 10, pp 925-926, issn 0038-1101Article

High-resolution transmission electron microscope studies of an Al-Ge-Ni Ohmic contact to GaAsGRAHAM, R. J; ERKAYA, H. H; EDWARDS, J. L et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1988, Vol 6, Num 5, pp 1502-1505, issn 0734-211XArticle

Development of Ohmic contact materials for GaAs integrated circuitsMURAKAMI, Masanori.Materials science reports. 1990, Vol 5, Num 6, issn 0920-2307, 45 p.Serial Issue

Contact resistance monitor for silicon integrated circuitsFAITH, T. J; IRVEN, R. S; REED, L. H et al.Journal of vacuum science and technology. A, vacuum, surfaces, and films. 1984, Vol 2, Num 1, pp 54-57Article

SIMS analysis of evaporated indium contacts on (HgCd)TeDEMANET, C. M; STRYDOM, H. J; BASSON, J. H et al.Applied surface science. 1986, Vol 25, Num 3, pp 279-287, issn 0169-4332Article

Experimental investigation on nonlinearities of PIN photodiodesYANLI ZHAO.Microelectronics journal. 2006, Vol 37, Num 6, pp 534-536, issn 0959-8324, 3 p.Article

Influence of the Au interlayer on the contact resistance and morphology of CdTe films deposited on molybdenum substrateHERNANDEZ, German P; JUAREZ, A. S; RESENDIZ, M. C et al.Solar energy materials and solar cells. 2006, Vol 90, Num 15, pp 2289-2296, issn 0927-0248, 8 p.Conference Paper

New contact resistivity characterization method for non-uniform ohmic contacts on GaNJANG, T; KWAK, J. S; NAM, O. H et al.Solid-state electronics. 2006, Vol 50, Num 3, pp 433-436, issn 0038-1101, 4 p.Article

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