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Results 1 to 25 of 2261

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808nm semiconductor laser ohmic-contact technologyWANG, Y; ZHANG, B; WANG, L et al.SPIE proceedings series. 1998, pp 75-78, isbn 0-8194-3008-0Conference Paper

Characterisation of Ni and Ni/Ti contact on n-type 4H-SiCSIAD, M; PINEDA VARGAS, C; NKOSI, M et al.Applied surface science. 2009, Vol 256, Num 1, pp 256-260, issn 0169-4332, 5 p.Article

Study of the impact of doping concentration and Schottky barrier height on ohmic contacts to n-type germaniumFIRRINCIELI, A; MARTENS, K; SIMOEN, E et al.Microelectronic engineering. 2013, Vol 106, pp 129-131, issn 0167-9317, 3 p.Conference Paper

RF-sputtered CrB2 diffusion barrier for Ni/Au Ohmic contacts on p-CUCrO2LIM, W. T; SADIK, P. W; NORTON, D. P et al.Applied surface science. 2008, Vol 254, Num 16, pp 5211-5215, issn 0169-4332, 5 p.Article

Fabrication of ohmic contact on the carbon-terminated surface of n-type silicon carbideMINGSHENG XU; XIAOBO HU; YAN PENG et al.Journal of alloys and compounds. 2013, Vol 550, pp 46-49, issn 0925-8388, 4 p.Article

Proposal of a new physical model for Ohmic contactsTAKADA, Y; MURAGUCHI, M; ENDOH, T et al.Physica. E, low-dimentional systems and nanostructures. 2010, Vol 42, Num 10, pp 2837-2840, issn 1386-9477, 4 p.Conference Paper

Ir-based diffusion barriers for Ohmic contacts to p-GaNVOSS, L. F; STAFFORD, L; GILA, B. P et al.Applied surface science. 2008, Vol 254, Num 13, pp 4134-4138, issn 0169-4332, 5 p.Article

Ohmic contacts and n-type doping on TixCr2xO3 films and the temperature dependence of their transport propertiesRANGEL-KUOPPA, Victor-Tapio; CONDE-GALLARDO, Agustin.Thin solid films. 2010, Vol 519, Num 1, pp 453-456, issn 0040-6090, 4 p.Article

Ohmic contact using the si nano-interlayer for undoped-AiGaN/GaN heterostructuresCHA, Ho-Young; CHEN, X; WU, H et al.Journal of electronic materials. 2006, Vol 35, Num 3, pp 406-410, issn 0361-5235, 5 p.Article

Direct fabrication of three-dimensional buried conductive channels in single crystal diamond with ion microbeam induced graphitizationOLIVERO, P; AMATO, G; VANNONI, M et al.Diamond and related materials. 2009, Vol 18, Num 5-8, pp 870-876, issn 0925-9635, 7 p.Conference Paper

Solid-state phase formation between Pd thin films and GaSb : Phase stability, formation and transformation of electronic materialsROBINSON, J. A; MOHNEY, S. E.Journal of electronic materials. 2006, Vol 35, Num 1, pp 48-55, issn 0361-5235, 8 p.Conference Paper

Integrated photometer with porous silicon interference filtersHUNKEL, D; MARSO, M; BUTZ, R et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2000, Vol 69-70, pp 100-103, issn 0921-5107Conference Paper

Ohmic I-V characteristics in semi-insulating semiconductor diodesJONES, B. K; SANTANA, J; MCPHERSON, M et al.Solid state communications. 1998, Vol 105, Num 9, pp 547-549, issn 0038-1098Article

On thermometer operation of ultrasmall tunnel junctionsMÜLLER, H.-O; HÄDICKE, A; KRECH, W et al.Physica status solidi. B. Basic research. 1995, Vol 188, Num 2, pp 667-677, issn 0370-1972Article

Thermoelectric voltages from Si cleavagesZHAO, D; HANEMAN, D.Surface science. 1997, Vol 391, Num 1-3, pp L1230-L1234, issn 0039-6028Article

Determination of contact resistivity by a modified Cox and Strack method in case of finite metal sheet resistanceAHMAD, M; GANGULI, T; PATIL, S et al.Solid-state electronics. 1995, Vol 38, Num 8, pp 1437-1440, issn 0038-1101Article

Graphene for True Ohmic Contact at Metal―Semiconductor JunctionsBYUN, Kyung-Eun; CHUNG, Hyun-Jong; KINAM KIM et al.Nano letters (Print). 2013, Vol 13, Num 9, pp 4001-4005, issn 1530-6984, 5 p.Article

The ohmic contact to the silicon Schottky barrier using vanadium silicide and gold or silver metallizationREMENYUK, A. D; SCHMIDT, N. M.Applied surface science. 1995, Vol 91, pp 352-354, issn 0169-4332Conference Paper

Electrical properties of Au-polystyrene-Au submicron structuresEFIMENKO, K; RYBKA, V; SVORCIK, V et al.Applied physics. A, Materials science & processing (Print). 1998, Vol 67, Num 5, pp 503-505, issn 0947-8396Article

An ion-assisted deposition system for use in the fabrication of submicron dimension device ohmic contactsMORGAN, S. P; MORGAN, D. V.Thin solid films. 1996, Vol 272, Num 1, pp 107-111, issn 0040-6090Article

Structural analysis of Au-Ni-Ge and Au-Ag-Ge alloyed ohmic contacts on modulation-doped AlGaAs-GaAs heterostructureHIGMAN, T. K; EMANUEL, M. A; COLEMAN, J. J et al.Journal of applied physics. 1986, Vol 60, Num 2, pp 677-680, issn 0021-8979Article

Electrical characteristics of aluminum contacts to porous siliconZIMIN, S. P; KUZNETSOV, V. S; PROKAZNIKOV, A. V et al.Applied surface science. 1995, Vol 91, pp 355-358, issn 0169-4332Conference Paper

Interface analysis of Ti/Al/Ti/Au ohmic contacts with regrown n+-GaN layers using molecular beam epitaxySEO, Hui-Chan; SIVARAMAKRISHNAN, Shankar; ZUO, Jian-Min et al.Surface and interface analysis. 2011, Vol 43, Num 13, pp 1627-1631, issn 0142-2421, 5 p.Article

W2B-based ohmic contacts to n-GaNKHANNA, Rohit; PEARTON, S. J; REN, F et al.Applied surface science. 2005, Vol 252, Num 5, pp 1826-1832, issn 0169-4332, 7 p.Article

Thermal degradation of Ni-based Schottky contacts on 6H―SiCBARDA, Bohumil; MACHAC, Petr; CICHONN, Stanislav et al.Applied surface science. 2011, Vol 257, Num 9, pp 4418-4421, issn 0169-4332, 4 p.Article

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