Effect of fixed charges due to a passivant on the performance of the HgCdTe overlap structureBHAN, R. K; GOPAL, V; SAXENA, R. S et al.Semiconductor science and technology. 2002, Vol 17, Num 6, pp 590-598, issn 0268-1242Article

Etude de dispositifs optoélectroniques à base d'hétérostructures piézoélectriques = Study of optoelectronic devices based on piezoelectric heterostructuresOrtiz, Valentin; Pautrat, Jean-Louis.1999, 174 p.Thesis

Time- and bias-dependent effects in ZnCd(Mg)Se blue and red quantum well light emitting diodes studied by cathodoluminescenceNIKIFOROV, A. Yu; CARGILL, G. S; GUO, S. P et al.Physica status solidi. B. Basic research. 2004, Vol 241, Num 3, pp 759-762, issn 0370-1972, 4 p.Conference Paper

Hybrid bistable device realization based on lock-in techniqueULLRICH, B.Semiconductor science and technology. 2002, Vol 17, Num 7, pp L33-L35, issn 0268-1242Article

Diodes Organiques Electroluminescentes = Organic Light Emitting DiodesEckle, Michel; Decher, Gero.2001, 269 p.Thesis

Organic electroluminescent devices : Enhanced carrier injection using SAM derivatized ITO electrodesAPPLEYARD, S. F. J; DAY, S. R; PICKFORD, R. D et al.Journal of material chemistry. 2000, Vol 10, Num 1, pp 169-173, issn 0959-9428Conference Paper

Low growth temperature AlGaAs current blocking layers for use in surface normal optoelectronic devicesROGERS, T. J; LEI, C; STREETMAN, B. G et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1993, Vol 11, Num 3, pp 926-928, issn 1071-1023Conference Paper

Enhanced photoconductivity in organic single-layered photoreceptors with bipolar charge transport materialsJIAN YE; CHEN, Hong-Zheng; MANG WANG et al.Materials chemistry and physics. 2003, Vol 82, Num 1, pp 210-215, issn 0254-0584, 6 p.Article

Crystal orientation dependence of many-body optical gain in wurtzite GaN/AlGaN quantum-well lasersPARK, Seoung-Hwan; CHUANG, Shun-Lien.Semiconductor science and technology. 2002, Vol 17, Num 7, pp 686-691, issn 0268-1242Article

Electron initiated impact ionization in AlGaN alloysBULUTAY, C.Semiconductor science and technology. 2002, Vol 17, Num 10, pp L59-L62, issn 0268-1242Article

Multiple air-gap filters and constricted mesa lasers: material processing meets the front of optical device technologyDALEIDEN, J; HILLMER, H.Applied physics. B, Lasers and optics (Print). 2003, Vol 76, Num 8, pp 821-832, issn 0946-2171, 12 p.Article

The optoelectronic technology of gallium nitride: the 2002 Benjamin Franklin medal in engineering presented to Shuji NakamuraAKSELRAD, Aline.Journal of the Franklin Institute. 2003, Vol 340, Num 3-4, pp 249-261, issn 0016-0032, 13 p.Article

Development of a high-precision straightness measuring system with DVD pick-up headFAN, Kuang-Chao; CHU, Chih-Liang; LIAO, Jarn-Lien et al.Measurement science & technology (Print). 2003, Vol 14, Num 1, pp 47-54, issn 0957-0233, 8 p.Article

Laser micromachining for optoelectronic device fabrication (Brugge, 30 October 2002)Ostendorf, Andreas.SPIE proceedings series. 2003, isbn 0-8194-4736-6, VII, 158 p, isbn 0-8194-4736-6Conference Proceedings

Dry etching of sapphire substrate for device separation in chlorine-based inductively coupled plasmasJEONG, C. H; KIM, D. W; BAE, J. W et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 93, Num 1-3, pp 60-63, issn 0921-5107Article

Micro-opto-mechanical grating switchesLIU, A. Q; ZHAO, B; CHOLLET, F et al.Sensors and actuators. A, Physical. 2000, Vol 86, Num 1-2, pp 127-134, issn 0924-4247Article

Optoelectronics moves forward on many frontsWALLACE, J.Laser focus world. 1999, Vol 35, Num 12, pp S7-S30, issn 1043-8092, 4 p.Article

Longevity of optically activated, high gain GaAs photoconductive semiconductor switches : Pulsed powder science and technologyLOUBRIEL, G. M; ZUTAVERN, F. J; MAR, A et al.IEEE transactions on plasma science. 1998, Vol 26, Num 5, pp 1393-1402, issn 0093-3813Article

Photoinduced electron transfer in PPV-viologen compositesLEE, J.-I; LEE, H.-Y; SHIM, H.-K et al.Molecular crystals and liquid crystals science and technology. Section A, Molecular crystals and liquid crystals. 1998, Vol 316, pp 257-260, issn 1058-725XConference Paper

Proposta di realizzazione di una sorgente laser a CO₂ = An opto-electronic device for CO₂ laserBARBINI, R; COSMA, B; PALUCCI, A et al.Energia, ambiente e innovazione. 1996, Vol 42, Num 3, pp 10-15, issn 1124-0016Article

Frequency bandwidth estimation of TO packaging techniques for laser modulesZHU, N. H; WANG, Y. L; QIAN, C et al.Optical and quantum electronics. 2005, Vol 37, Num 10, pp 903-913, issn 0306-8919, 11 p.Article

III-N-V semiconductors alloysAGER, Joel W; WALUKIEWICZ, Wladek.Semiconductor science and technology. 2002, Vol 17, Num 8, issn 0268-1242, 166 p.Serial Issue

Surface contouring by diffractive optical element-based fringe projectionSCHIRRIPA-SPAGNOLO, Giuseppe; AMBROSINI, Dario.Measurement science & technology (Print). 2001, Vol 12, Num 1, pp N6-N8, issn 0957-0233Article

Enhancement of the LETFEL device optical outcoupling via the fabrication of novel geometry structuresBARROS, S. O; STEVENS, R; CRANTON, W et al.SPIE proceedings series. 2000, pp 141-150, isbn 0-8194-3573-2Conference Paper

Fast humidity sensor using optoelectronic detection on pulsed Peltier devicePASCAL-DELANNOY, F; SACKDA, A; GIANI, A et al.Sensors and actuators. A, Physical. 1998, Vol 65, Num 2-3, pp 165-170, issn 0924-4247Article