Pascal and Francis Bibliographic Databases


Search results

Your search

ct.\*:("Optoelectronic devices")


A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Document Type [dt]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Publication Year[py]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Discipline (document) [di]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV


A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Author Country

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Results 1 to 25 of 23427

  • Page / 938

Selection :

  • and

Effect of fixed charges due to a passivant on the performance of the HgCdTe overlap structureBHAN, R. K; GOPAL, V; SAXENA, R. S et al.Semiconductor science and technology. 2002, Vol 17, Num 6, pp 590-598, issn 0268-1242Article

Etude de dispositifs optoélectroniques à base d'hétérostructures piézoélectriques = Study of optoelectronic devices based on piezoelectric heterostructuresOrtiz, Valentin; Pautrat, Jean-Louis.1999, 174 p.Thesis

Magnetometer based on the opto-electronic microwave oscillatorMATSKO, Andrey B; STREKALOV, Dmitry; MALEKI, Lute et al.Optics communications. 2005, Vol 247, Num 1-3, pp 141-148, issn 0030-4018, 8 p.Article

Optoelectronic characterization of a-SiC:H stacked devicesLOURO, P; FANTONI, A; FERNANDES, M et al.Journal of non-crystalline solids. 2004, Vol 338-40, pp 345-348, issn 0022-3093, 4 p.Conference Paper

Slow mode degradation mechanism of ZnSe based white LEDsADACHI, Masahiro; ANDO, Koshi; ABE, Tomoki et al.Physica status solidi. B. Basic research. 2004, Vol 241, Num 3, pp 751-758, issn 0370-1972, 8 p.Conference Paper

Parametric reactive ion etching of InP using Cl2 and CH4 gases: Effects of H2 and Ar additionJAE SU YU; YONG TAK LEE.Semiconductor science and technology. 2002, Vol 17, Num 3, pp 230-236, issn 0268-1242Article

Progress towards silicon optoelectronics using porous silicon technologyCANHAM, L. T; COX, T. I; LONI, A et al.Applied surface science. 1996, Vol 102, pp 436-441, issn 0169-4332Conference Paper

Time- and bias-dependent effects in ZnCd(Mg)Se blue and red quantum well light emitting diodes studied by cathodoluminescenceNIKIFOROV, A. Yu; CARGILL, G. S; GUO, S. P et al.Physica status solidi. B. Basic research. 2004, Vol 241, Num 3, pp 759-762, issn 0370-1972, 4 p.Conference Paper

Hybrid bistable device realization based on lock-in techniqueULLRICH, B.Semiconductor science and technology. 2002, Vol 17, Num 7, pp L33-L35, issn 0268-1242Article

Diodes Organiques Electroluminescentes = Organic Light Emitting DiodesEckle, Michel; Decher, Gero.2001, 269 p.Thesis

Organic electroluminescent devices : Enhanced carrier injection using SAM derivatized ITO electrodesAPPLEYARD, S. F. J; DAY, S. R; PICKFORD, R. D et al.Journal of material chemistry. 2000, Vol 10, Num 1, pp 169-173, issn 0959-9428Conference Paper

Low growth temperature AlGaAs current blocking layers for use in surface normal optoelectronic devicesROGERS, T. J; LEI, C; STREETMAN, B. G et al.Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1993, Vol 11, Num 3, pp 926-928, issn 1071-1023Conference Paper

Enhanced photoconductivity in organic single-layered photoreceptors with bipolar charge transport materialsJIAN YE; CHEN, Hong-Zheng; MANG WANG et al.Materials chemistry and physics. 2003, Vol 82, Num 1, pp 210-215, issn 0254-0584, 6 p.Article

Crystal orientation dependence of many-body optical gain in wurtzite GaN/AlGaN quantum-well lasersPARK, Seoung-Hwan; CHUANG, Shun-Lien.Semiconductor science and technology. 2002, Vol 17, Num 7, pp 686-691, issn 0268-1242Article

High speed integrated optical wireless transceivers for in-building optical LANsO'BRIEN, Dominic C; FAULKNER, Grahame E; LALITHAMBIKA, Vinod A et al.SPIE proceedings series. 2001, pp 104-114, isbn 0-8194-3879-0Conference Paper

Characteristics of MBE-grown heterostructure HgCdTe/CdTe/Si materials and planar photovoltaic devicesASHOKAN, R; SIVANANTHAN, S.Materials science & engineering. B, Solid-state materials for advanced technology. 1999, Vol 67, Num 1-2, pp 88-94, issn 0921-5107Conference Paper

Electron initiated impact ionization in AlGaN alloysBULUTAY, C.Semiconductor science and technology. 2002, Vol 17, Num 10, pp L59-L62, issn 0268-1242Article

Multiple air-gap filters and constricted mesa lasers: material processing meets the front of optical device technologyDALEIDEN, J; HILLMER, H.Applied physics. B, Lasers and optics (Print). 2003, Vol 76, Num 8, pp 821-832, issn 0946-2171, 12 p.Article

The optoelectronic technology of gallium nitride: the 2002 Benjamin Franklin medal in engineering presented to Shuji NakamuraAKSELRAD, Aline.Journal of the Franklin Institute. 2003, Vol 340, Num 3-4, pp 249-261, issn 0016-0032, 13 p.Article

Development of a high-precision straightness measuring system with DVD pick-up headFAN, Kuang-Chao; CHU, Chih-Liang; LIAO, Jarn-Lien et al.Measurement science & technology (Print). 2003, Vol 14, Num 1, pp 47-54, issn 0957-0233, 8 p.Article

Laser micromachining for optoelectronic device fabrication (Brugge, 30 October 2002)Ostendorf, Andreas.SPIE proceedings series. 2003, isbn 0-8194-4736-6, VII, 158 p, isbn 0-8194-4736-6Conference Proceedings

Dry etching of sapphire substrate for device separation in chlorine-based inductively coupled plasmasJEONG, C. H; KIM, D. W; BAE, J. W et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 93, Num 1-3, pp 60-63, issn 0921-5107Article

Micro-opto-mechanical grating switchesLIU, A. Q; ZHAO, B; CHOLLET, F et al.Sensors and actuators. A, Physical. 2000, Vol 86, Num 1-2, pp 127-134, issn 0924-4247Article

Optoelectronics moves forward on many frontsWALLACE, J.Laser focus world. 1999, Vol 35, Num 12, pp S7-S30, issn 1043-8092, 4 p.Article

Longevity of optically activated, high gain GaAs photoconductive semiconductor switches : Pulsed powder science and technologyLOUBRIEL, G. M; ZUTAVERN, F. J; MAR, A et al.IEEE transactions on plasma science. 1998, Vol 26, Num 5, pp 1393-1402, issn 0093-3813Article

  • Page / 938