Mean field theory for condensation on aerosols and application to multi-component organic vapoursCLEMENT, Charles F.Journal of aerosol science. 2003, Vol 34, Num 1, pp 27-40, issn 0021-8502, 14 p.Article

Below brand-gap IR response of substrate-free GaAs solar cells using two-photon up-conversionGIBART, P; AUZEL, F; GUILLAUME, J.-C et al.Japanese journal of applied physics. 1996, Vol 35, Num 8, pp 4401-4402, issn 0021-4922, 1Article

Growth of (BGa)As, (BGa)P, (BGa)(AsP) and (BGaIn)P by MOVPESOMMER, N; BUSS, R; OHLMANN, J et al.Journal of crystal growth. 2013, Vol 370, pp 191-196, issn 0022-0248, 6 p.Conference Paper

Organic vapour sensing by porous silicon: Influence of molecular kinetics in selectivity studiesDHANEKAR, Saakshi; ISLAM, S. S; ISLAM, T et al.Physica. E, low-dimentional systems and nanostructures. 2010, Vol 42, Num 5, pp 1648-1652, issn 1386-9477, 5 p.Article

Vapour pressure measurement of metal organic precursors used for MOVPEFULEM, M; RUZICKA, K; RUZICKA, V et al.Journal of chemical thermodynamics. 2006, Vol 38, Num 3, pp 312-322, issn 0021-9614, 11 p.Article

Interaction of volatile organic vapours with azo-calix[4]-resorcinarene and poly(9-vinylcarbazole) thin films using SPR measurementsHASSAN, A. K; GOY, C; NABOK, A. V et al.Thin solid films. 2008, Vol 516, Num 24, pp 9006-9011, issn 0040-6090, 6 p.Conference Paper

The impact of hydrogen on indium incorporation and surface accumulation in InAlN epitaxySADLER, Thomas C; KAPPERS, Menno J; OLIVER, Rachel A et al.Journal of crystal growth. 2011, Vol 331, Num 1, pp 4-7, issn 0022-0248, 4 p.Article

Metal organic vapour phase epitaxy of MgO films grown on c-plane SapphireTHIANDOUME, C; LUSSON, A; GALTIER, P et al.Journal of crystal growth. 2009, Vol 311, Num 19, pp 4371-4373, issn 0022-0248, 3 p.Article

Morphology transition of one-dimensional ZnO grown by metal organic vapour phase epitaxy on (0001)-ZnO substrateTHIANDOUME, C; BARJON, J; KA, O et al.Journal of crystal growth. 2009, Vol 311, Num 18, pp 4311-4316, issn 0022-0248, 6 p.Article

A ZnSe/ZnMgSSe nanostructure for a laser electron-beam tube emitting in the blue spectral regionKAZAKOV, I. P; KOZLOVSKY, V. I; MARTOVITSKY, V. P et al.Quantum electronics (Woodbury). 2007, Vol 37, Num 9, pp 857-862, issn 1063-7818, 6 p.Article

Metal-organic vapour phase epitaxy of BInGaN quaternary alloys and characterization of boron contentGAUTIER, S; ORSAL, G; FERGUSON, I. T et al.Journal of crystal growth. 2010, Vol 312, Num 5, pp 641-644, issn 0022-0248, 4 p.Article

Insights into the growth mechanism of In_xGa_1-xN epitaxial nanostructures formed using a silane predoseOLIVER, R. A; VAN DER LAAK, N. K; KAPPERS, M. J et al.Journal of crystal growth. 2008, Vol 310, Num 15, pp 3459-3465, issn 0022-0248, 7 p.Article

Growth of various antimony-containing alloys by MOVPEGRASSE, Christian; MEYER, Ralf; BREUER, Uwe et al.Journal of crystal growth. 2008, Vol 310, Num 23, pp 4835-4838, issn 0022-0248, 4 p.Conference Paper

In situ scanning tunnelling microscopy during metal-organic vapour phase epitaxyPRISTOVSEK, M; RÄHMER, B; BREUSIG, M et al.Journal of crystal growth. 2007, Vol 298, pp 8-11, issn 0022-0248, 4 p.Conference Paper

Epitaxy of multimodal InAs/GaAs quantum dot ensemblesPÖTSCHKE, Konstantin; FEISE, David; POHL, Udo W et al.Journal of crystal growth. 2007, Vol 298, pp 567-569, issn 0022-0248, 3 p.Conference Paper

Optimization of the growth of the InGaP etch-stop layer by MOVPE for InGaP/GaAs HBT device applicationHSIEH, Y. C; CHANG, E. Y; YEH, S. S et al.Journal of crystal growth. 2006, Vol 289, Num 1, pp 96-101, issn 0022-0248, 6 p.Article

GaP-nucleation on exact Si (0 0 1) substrates for III/V device integrationVOLZ, Kerstin; BEYER, Andreas; WITTE, Wiebke et al.Journal of crystal growth. 2011, Vol 315, Num 1, pp 37-47, issn 0022-0248, 11 p.Conference Paper

Relaxation of compressively strained AlInN on GaNLORENZ, K; FRANCO, N; ALVES, E et al.Journal of crystal growth. 2008, Vol 310, Num 18, pp 4058-4064, issn 0022-0248, 7 p.Article

GaN materials growth by NIVOE in a new-design reactor using DMHy and NH₃GAUTIER, S; SARTEL, C; OULD-SAAD, S et al.Journal of crystal growth. 2007, Vol 298, pp 428-432, issn 0022-0248, 5 p.Conference Paper

AlGaInP growth parameter optimisation during MOVPE for opto-electronic devicesZORN, M; TREPK, T; SCHENK, T et al.Journal of crystal growth. 2007, Vol 298, pp 23-27, issn 0022-0248, 5 p.Conference Paper

Morphology of interior interfaces in the novel dilute nitride Ga(NAsP)/ GaP material systemOBERHOFF, S; KUNERT, B; TORUNSKI, T et al.Journal of crystal growth. 2007, Vol 298, pp 98-102, issn 0022-0248, 5 p.Conference Paper

Growth and characterization of InN layers by metal-organic vapour phase epitaxy in a close-coupled showerhead reactorKADIR, Abdul; GANGULI, Tapas; GOKHALE, M. R et al.Journal of crystal growth. 2007, Vol 298, pp 403-408, issn 0022-0248, 6 p.Conference Paper

Modelling and simulation of MOVPE of GaAs-based compound semiconductors in production scale Planetary ReactorsBRIEN, D; DAUELSBERG, M; CHRISTIANSEN, K et al.Journal of crystal growth. 2007, Vol 303, Num 1, pp 330-333, issn 0022-0248, 4 p.Conference Paper

MOVPE growth and properties of light emitting diodes with an incorporated InMnAs ferromagnetic layerNOVAK, J; TELEK, P; VAVRA, I et al.Journal of crystal growth. 2011, Vol 315, Num 1, pp 78-81, issn 0022-0248, 4 p.Conference Paper

Analysis of tellurium as n-type dopant in GaInP : Doping, diffusion, memory effect and surfactant propertiesGARCIA, I; REY-STOLLE, I; GALIANA, B et al.Journal of crystal growth. 2007, Vol 298, pp 794-799, issn 0022-0248, 6 p.Conference Paper