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Predicting the position of the spin-forbidden band for Tb³⁺ ions in crystal hostsJINGSHENG SHI; SIYUAN ZHANG.Journal of physics. Condensed matter (Print). 2003, Vol 15, Num 24, pp 4101-4107, issn 0953-8984, 7 p.Article

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Annealing study of a bistable defect in proton-implanted n-type 4H-SiCNIELSEN, H. Kortegaard; MARTIN, D. M; LEVEQUE, P et al.Physica. B, Condensed matter. 2003, Vol 340-42, pp 743-747, issn 0921-4526, 5 p.Conference Paper

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Theoretical study of F-type color center in rutile TiO₂CHEN, J; LIN, L.-B; JING, F.-Q et al.The Journal of physics and chemistry of solids. 2001, Vol 62, Num 7, pp 1257-1262, issn 0022-3697Article

Endohedral vibrations of Na⁺ and K⁺ in C₆₀VARSHNI, Y. P.Physica. B, Condensed matter. 2001, Vol 307, Num 1-4, pp 197-202, issn 0921-4526Article

Observations of deep levels in 4H-SiC using optoelectronic modulation spectroscopyCHIU, Chi-Hsin; PARMITER, P. J. M; HILTON, K et al.Journal of electronic materials. 2001, Vol 30, Num 10, pp 1361-1368, issn 0361-5235Article

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Calculation of hyperfine parameters of positively charged carbon vacancy in SiCPETRENKO, T. T; PETRENKO, T. L; BRATUS, V. Ya et al.Physica. B, Condensed matter. 2001, Vol 308-10, pp 637-640, issn 0921-4526Conference Paper

A theoretical calculation of vibronic coupling strength : the trend in the lanthanide ion series and the host-lattice dependenceCAMPOS, A. F; MEIJERINK, A; DE MELLO DONEGA, C et al.The Journal of physics and chemistry of solids. 2000, Vol 61, Num 9, pp 1489-1498, issn 0022-3697Article

Ab initio study of oxygen vacancies in BaTiO₃DONNERBERG, H; BIRKHOLZ, A.Journal of physics. Condensed matter (Print). 2000, Vol 12, Num 38, pp 8239-8247, issn 0953-8984Article

Control and passivation of V_Se defect levels in H₂Se-selenized CuInSe₂ thin filmsSCHÖN, J. H; ALBERTS, V; BUCHER, E et al.Semiconductor science and technology. 1999, Vol 14, Num 7, pp 657-659, issn 0268-1242Article

Impurity states in narrow bandgap semiconductors in a high magnetic fieldAVETISYAN, A. A; DJOTYAN, A. P; KAZARYAN, E. M et al.Physica status solidi. B. Basic research. 1999, Vol 214, Num 1, pp 91-95, issn 0370-1972Article

Thermoelectric voltage spectroscopy for studying compensation in semi-insulating wide energy band gap materialsLEE, E. Y.Solid state communications. 1999, Vol 112, Num 1, pp 31-34, issn 0038-1098Article

An ab initio Hartree-Fock study of the electron-excess gap states in oxygen-deficient rutile TiO₂MACKRODT, W. C; SIMSON, E.-A; HARRISON, N. M et al.Surface science. 1997, Vol 384, Num 1-3, pp 192-200, issn 0039-6028Article

Defect characterization of sputter deposited Au contacts on N-type Si_1-xGe_xGOODMAN, S. A; AURET, F. D.Japanese journal of applied physics. 1997, Vol 36, Num 2, pp 633-637, issn 0021-4922, 1Article

A study of bistable (shallow-deep) defect systems in CdF₂:M³⁺ (M: In, Ga)YANG CAI; SONG, K. S.Journal of physics. Condensed matter (Print). 1995, Vol 7, Num 11, pp 2275-2284, issn 0953-8984Article

Effects of a nonlinear impurity in two-dimensional systemsNG, K. M; YIU, Y. Y; HUI, P. M et al.Solid state communications. 1995, Vol 95, Num 11, pp 801-804, issn 0038-1098Article

Origin of the shallow oxygen levels in perovskite structuresGLINCHUK, M. D; KUZIAN, R. O; KARMAZIN, A. A et al.Physica. B, Condensed matter. 1995, Vol 210, Num 2, pp 121-130, issn 0921-4526Article

Nature of the Si and N dangling bonds in silicon nitrideROBERTSON, J; WARREN, W. L; KANICKI, J et al.Journal of non-crystalline solids. 1995, Vol 187, pp 297-300, issn 0022-3093Conference Paper

Quasicluster electronic structure calculations of point defects in crystalsTITOV, S. A.Physica status solidi. B. Basic research. 1995, Vol 190, Num 1, pp 261-270, issn 0370-1972Conference Paper

Cluster calculation of the boron centre in SiCPETRENKO, T. L; BUGAI, A. A; BARYAKHTAR, V. G et al.Semiconductor science and technology. 1994, Vol 9, Num 10, pp 1849-1852, issn 0268-1242Article