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Results 1 to 25 of 1080

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Oxygen related defects in germaniumCLAUWS, P.Materials science & engineering. B, Solid-state materials for advanced technology. 1996, Vol 36, Num 1-3, pp 213-220, issn 0921-5107Conference Paper

Geometrical configuration of interstitial oxygen in silicon and in germaniumLIZON-NORDSTRÖM, A; YNDURAIN, F.Solid state communications. 1994, Vol 89, Num 9, pp 819-822, issn 0038-1098Article

The role of rapidly diffusing dimers in oxygen loss and the association of thermal donors with small oxygen clustersMCQUAID, S. A; NEWMAN, R. C; MUNOZ, E et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1996, Vol 36, Num 1-3, pp 171-174, issn 0921-5107Conference Paper

Influence of the first thermal cycles of an IC process on oxygen precipitation in CZ silicon wafers: a detailed analysisJOLY, J. P; ROBERT, V.Semiconductor science and technology. 1994, Vol 9, Num 1, pp 105-111, issn 0268-1242Article

Hetherogeneous precipitation in oxygen-implanted siliconCEROFOLINI, G. F; BERTONI, S; MEDA, L et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1996, Vol 36, Num 1-3, pp 26-29, issn 0921-5107Conference Paper

Luminescence of oxygen-rare gas exciplex compounds in rare gas matricesBELOV, A. G; FUGOL, I. Ya; YURTAEVA, E. M et al.Journal of luminescence. 2000, Vol 91, Num 1-2, pp 107-120, issn 0022-2313Article

Silicon on thin insulator : prediction of the oxygen fluence required for the formation of a continuous buried oxideCEROFOLINI, G. F; BERTONI, S; MEDA, L et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1994, Vol 22, Num 2-3, pp 172-180, issn 0921-5107Article

Stress-induced oxygen precipitation in Cz-SiMISIUK, A; SURMA, B; HARTWIG, J et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1996, Vol 36, Num 1-3, pp 30-32, issn 0921-5107Conference Paper

Oxygen diffusion and precipitation in Czochralski siliconNEWMAN, R. C.Journal of physics. Condensed matter (Print). 2000, Vol 12, Num 25, pp R335-R365, issn 0953-8984Article

Oxygen content of substrates and tunnel oxide quality : an in-line systematic analysisSOTTOCASA, E; ILLUZZI, F; NAHMAD, D et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1996, Vol 36, Num 1-3, pp 187-191, issn 0921-5107Conference Paper

Oxygen solubility in Si melts : influence of boron additionABE, K; MATSUMOTO, T; MAEDA, S et al.Journal of crystal growth. 1997, Vol 181, Num 1-2, pp 41-47, issn 0022-0248Article

Generation of thermal donors in silicon: oxygen aggregation controlled by self-interstitialsVORONKOV, V. V.Semiconductor science and technology. 1993, Vol 8, Num 12, pp 2037-2047, issn 0268-1242Article

Ring-distribution of oxygen precipitates in Czochralski silicon revealed by low-temperature infrared absorption spectroscopyONO, H; IKARASHI, T.Applied physics letters. 1993, Vol 63, Num 24, pp 3303-3305, issn 0003-6951Article

Impact of the starting interstitial oxygen concentration on the electrical characteristics of electron irradiated Si junction diodesSIMOEN, E; DUBUC, J. P; VANHELLEMONT, J et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1996, Vol 36, Num 1-3, pp 179-182, issn 0921-5107Conference Paper

Influence of hydrogen and oxygen on the melt properties and the crystal growth in siliconIKARI, A; SASAKI, H; TOKIZAKI, E et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1996, Vol 36, Num 1-3, pp 42-45, issn 0921-5107Conference Paper

Formation of double thermal donors in Cz-Si with different oxygen concentrationsEMTSEV, V. V; MASHOVETS, T. V; OGANESYAN, G. A et al.Semiconductors (Woodbury, N.Y.). 1993, Vol 27, Num 9, pp 854-856, issn 1063-7826Article

Internal friction studies on oxygen-oxygen interaction in niobium. I: Experimental resultats and application of previous interpretationsWELLER, M; HANECZOK, G; DIEHL, J et al.Physica status solidi. B. Basic research. 1992, Vol 172, Num 1, pp 145-159, issn 0370-1972Article

Kinetics of divacancy annealing and divacancy-oxygen formation in oxygen-enriched high-purity siliconMIKELSEN, M; MONAKHOV, E. V; ALFIERI, G et al.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 19, pp 195207.1-195207.6, issn 1098-0121Article

Oxygen precipitation in neutron-irradiated Czochralski silicon annealed at elevated temneratureCAN CUI; DEREN YANG; XIANGYANG MA et al.Physica status solidi. A. Applied research. 2005, Vol 202, Num 13, pp 2442-2447, issn 0031-8965, 6 p.Article

Thermal conductivity of O2-and N2-Doped solid CH4GORODILOV, B. G; SUMAROKOV, V. V; JEZOWSKI, A et al.Journal of low temperature physics. 2001, Vol 122, Num 3-4, pp 187-193, issn 0022-2291Conference Paper

Does the fast, blue photoluminescence from spark-processed silicon originate from tungsten doping?HUMMEL, R. E; SHEPHERD, N; LUDWIG, M. H et al.Thin solid films. 1998, Vol 325, Num 1-2, pp 1-3, issn 0040-6090Article

Oxygen-induced defect luminescence in porous siliconO'KEEFFE, P; KOMURO, S; MORIKAWA, T et al.Applied surface science. 1997, Vol 113114, pp 135-139, issn 0169-4332Conference Paper

Influence of carbon and oxygen on phosphorus and aluminium co-gettering in silicon solar cellsMAHFOUD, K; LOGHMARTI, M; MULLER, J. C et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1996, Vol 36, Num 1-3, pp 63-67, issn 0921-5107Conference Paper

Influence of oxygen and nitrogen on point defect aggregation in silicon single crystalsAMMON, W. V; DREIER, P; HENSEL, W et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1996, Vol 36, Num 1-3, pp 33-41, issn 0921-5107Conference Paper

Oxygen distribution in Czochralski silicon melts measured by an electrochemical oxygen sensorSEIDL, A; MARTEN, R; MÜLLER, G et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1996, Vol 36, Num 1-3, pp 46-49, issn 0921-5107Conference Paper

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