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Growth of nickel silicide quantum dot arrays on epitaxial SI0.7GE0.3 on (001) silicon with a sacrificial amorphous silicon interlayerCHEN, L. J; WU, W. W; CHENG, S. L et al.Proceedings - Electrochemical Society. 2003, pp 325-330, issn 0161-6374, isbn 1-56677-396-2, 6 p.Conference Paper

Poly-Si gate CMOS with hafnium silicate gate dielectricHOBBS, Christopher; GRANT, John; FRANKE, Andrea et al.Proceedings - Electrochemical Society. 2003, pp 361-366, issn 0161-6374, isbn 1-56677-396-2, 6 p.Conference Paper

Intra-die temperature non uniformity related to front side emissivity dependence during rapid thermal annealingLAVIRON, C; LINDSAY, R; MICHALLET, A et al.Proceedings - Electrochemical Society. 2003, pp 3-9, issn 0161-6374, isbn 1-56677-396-2, 7 p.Conference Paper

Pattern effects during spike annealing of ultra-shallow implantsNIESS, J; NENYEI, Z; LERCH, W et al.Proceedings - Electrochemical Society. 2003, pp 11-16, issn 0161-6374, isbn 1-56677-396-2, 6 p.Conference Paper

High resolution investigation of atomic interdiffusion during CO/NI/SI phase transitionALBERTI, Alessandra; CAFRA, Brunella; BONGIORNO, Corrado et al.Proceedings - Electrochemical Society. 2003, pp 161-166, issn 0161-6374, isbn 1-56677-396-2, 6 p.Conference Paper

Selective oxidation of tungsten-gate stacks in high-volume DRAM productionROTERS, Georg; HAYN, Regina; KEGEL, Wilhelm et al.Proceedings - Electrochemical Society. 2003, pp 385-390, issn 0161-6374, isbn 1-56677-396-2, 6 p.Conference Paper

Sidewall grooving on COSI2 narrow linesCHAMIRIAN, O; DE POTTER, M; LAUWERS, A et al.Proceedings - Electrochemical Society. 2003, pp 155-160, issn 0161-6374, isbn 1-56677-396-2, 6 p.Conference Paper

A first principles examination of the diffusion of boron in silicon during microwave RTPTHOMPSON, K; BONIFAS, C. J; COOPER, R. F et al.Proceedings - Electrochemical Society. 2003, pp 61-66, issn 0161-6374, isbn 1-56677-396-2, 6 p.Conference Paper

HfO2 films by UV-assisted and thermal injection liquid source MOCVDO'SULLIVAN, B. J; HURLEY, P. K; RUSHWORTH, S et al.Proceedings - Electrochemical Society. 2003, pp 443-449, issn 0161-6374, isbn 1-56677-396-2, 7 p.Conference Paper

Development of 12 Å plasma nitrided gate dielectrics through characterization of process, physical and electrical parametersMINER, Gary; KRAUS, Philip; LEPERT, Arnaud et al.Proceedings - Electrochemical Society. 2003, pp 251-264, issn 0161-6374, isbn 1-56677-396-2, 14 p.Conference Paper

MOSFET channel engineering using strained silicon, silicon-germanium, and germanium channelsFITZGERALD, E. A; LEE, M. L; LEITZ, C. W et al.Proceedings - Electrochemical Society. 2003, pp 315-324, issn 0161-6374, isbn 1-56677-396-2, 10 p.Conference Paper

Relation between thermal evolution of interstitial defects and transient enhanced diffusion in siliconCLAVERIE, A; CRISTIANO, F; COLOMBEAU, B et al.Proceedings - Electrochemical Society. 2003, pp 73-82, issn 0161-6374, isbn 1-56677-396-2, 10 p.Conference Paper

Structure and thermal evolution of small clusters found after ultra low energy high dose boron implantation in SiHEBRAS, X; CRISTIANO, F; CHERKASHIN, N et al.Proceedings - Electrochemical Society. 2003, pp 67-72, issn 0161-6374, isbn 1-56677-396-2, 6 p.Conference Paper

Ultra-shallow junction formation by gas immersion laser doping (GILD) on silicon bulk and SOI substrateHERNANDEZ, M; SARNET, T; DEBARRE, D et al.Proceedings - Electrochemical Society. 2003, pp 145-151, issn 0161-6374, isbn 1-56677-396-2, 7 p.Conference Paper

Charges in HFO2 ALD gate dielectricsBERSUKER, G; ZEITZOFF, P. M; HUFF, H. R et al.Proceedings - Electrochemical Society. 2003, pp 417-422, issn 0161-6374, isbn 1-56677-396-2, 6 p.Conference Paper

Cluster ion beam process technologyYAMADA, Isao; TOYODA, Noriaki; MATSUO, Jiro et al.Proceedings - Electrochemical Society. 2003, pp 51-60, issn 0161-6374, isbn 1-56677-396-2, 10 p.Conference Paper

Dose loss and diffusion in BF2 implanted silicon during rapid thermal annealingDOKUMACI, Omer; RONSHEIM, Paul; HEGDE, Suri et al.Proceedings - Electrochemical Society. 2003, pp 105-110, issn 0161-6374, isbn 1-56677-396-2, 6 p.Conference Paper

Ni-based silicides: Material issues for advanced CMOS applicationsKITTL, Jorge A; LAUWERS, Anne; CHAMIRIAN, Oxana et al.Proceedings - Electrochemical Society. 2003, pp 177-182, issn 0161-6374, isbn 1-56677-396-2, 6 p.Conference Paper

Design of experiment on the CO salicide process: Impact of thickness and anneals on main CMOS parametersWACQUANT, F; REGNIER, C; BASSO, M.-T et al.Proceedings - Electrochemical Society. 2003, pp 191-196, issn 0161-6374, isbn 1-56677-396-2, 6 p.Conference Paper

Evaluation of CMOS gate metal materials using in situ characterization techniquesCABRAL, C; LAVOIE, C; OZCAN, A. S et al.Proceedings - Electrochemical Society. 2003, pp 375-384, issn 0161-6374, isbn 1-56677-396-2, 10 p.Conference Paper

Rapid thermal process atomic layer deposition of high dielectric constant ultrathin ZrO2 for sub 65nm silicon CMOS technologyFAKHRUDDIN, M; SINGH, R; POOLE, K. F et al.Proceedings - Electrochemical Society. 2003, pp 281-285, issn 0161-6374, isbn 1-56677-396-2, 5 p.Conference Paper

The diffusion, activation and microstructure evolution of phosphorus implanted into polysiliconADAM, L. S; WANG, Y; MANSOORI, M et al.Proceedings - Electrochemical Society. 2003, pp 339-344, issn 0161-6374, isbn 1-56677-396-2, 6 p.Conference Paper

Advanced layer-by-layer deposition and annealing process for high-quality high-K dielectrics formationIWAMOTO, K; TOMINAGA, T; YASUDA, T et al.Proceedings - Electrochemical Society. 2003, pp 265-272, issn 0161-6374, isbn 1-56677-396-2, 8 p.Conference Paper

Fabrication of SiGe-on-insulator substrates for high-performance strained SOI-MOSFETs by germanium condensation techniqueTEZUKA, Tsutomu; SUGIYAMA, Naoharu; MIZUNO, Tomohisa et al.Proceedings - Electrochemical Society. 2003, pp 305-314, issn 0161-6374, isbn 1-56677-396-2, 10 p.Conference Paper

Junction scaling for 90 NM and beyondHWANG, Jack; KENNEL, Hal; PACKAN, Paul et al.Proceedings - Electrochemical Society. 2003, pp 35-42, issn 0161-6374, isbn 1-56677-396-2, 8 p.Conference Paper

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