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HEAT DISSIPATION FROM SILICON CHIPS IN A VERTICAL PLATE, ELEVATED PRESSURE COLD WALL SYSTEMREISMAN A; BERKENBLIT M; MERZ CJ et al.1982; JOURNAL OF ELECTRONIC MATERIALS; ISSN 0361-5235; USA; DA. 1982; VOL. 11; NO 2; PP. 391-411; BIBL. 4 REF.Article

ETUDE DE L'INFLUENCE DE LA RECOMBINAISON AUGER SUR LA CARACTERISTIQUE VOLT-AMPERE DES STRUCTURES DE COUCHES MULTIPLES EN SILICIUMZUBRILOV AS; KUZ'MIN VA; MNATSAKANOV TT et al.1983; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1983; VOL. 17; NO 3; PP. 474-478; BIBL. 10 REF.Article

JONCTIONS P-N DANS LES SOLUTIONS SOLIDES DE GAAS-GASBVUL A YA; KARYAEV VN; PETROSYAN PG et al.1982; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1982; VOL. 16; NO 10; PP. 1838-1842; BIBL. 24 REF.Article

AVALANCHE BREAKDOWN VOLTAGE OF GAAS HYPERABRUPT JUNCTIONSSHIMIZU A; KOSHIMIZU T.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 12; PP. 1155-1160; BIBL. 28 REF.Article

PLATINUM SILICIDE OHIMIC CONTACTS TO SHALLOW JUNCTIONS IN SILICONCOHEN SS; PIACENTE PA; GILDENBLAT G et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 12; PP. 8856-8862; BIBL. 33 REF.Article

Study on the deterioration process of bipolar coating using electrochemical impedance spectroscopyXIAOMEI SU; QIONG ZHOU; QINGYI ZHANG et al.Applied surface science. 2011, Vol 257, Num 14, pp 6095-6101, issn 0169-4332, 7 p.Article

BOUNDARY CONDITIONS AT P-N JUNCTIONSHEASELL EL.1979; SOLID-STATE ELECTRON.; GBR; DA. 1979; VOL. 22; NO 10; PP. 853-856; BIBL. 16 REF.Article

UEBER DIE PASSIVIERUNG VON P-N-UEBERGAENGEN IN SILIZIUM DURCH ANODISCHE OXYDATION = PASSIVATION DE JONCTIONS P N EN SILICIUM PENDANT L'OXYDATION ANODIQUEMENDE G; BUTTER KD; SCHMIDT B et al.1983; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1983; VOL. 102; NO 1; PP. 65-69; ABS. ENG; BIBL. 10 REF.Article

ETUDE DE LA VARIATION EN FREQUENCE DE LA CAPACITE DE BARRIERE DE DIODES A BASE DE SILICIUM P ET N DE RESISTIVITE ELEVEEDMITRENKO NN; KURILO PM; SHATIKHINA NL et al.1980; POLUPROVODN. TEKH. MIHROELEKTRON.; UKR; DA. 1980; NO 31; PP. 63-66; BIBL. 10 REF.Article

Phenomenon of zaplyvania in p+-n and n+-p-junctions and its influence on the characteristics of semiconductor devices and the elements of integral schemesGARIAINOV, S. A; GARIAINOV, A. S; PLESHKO, B. K et al.Radiotehnika i èlektronika. 1990, Vol 35, Num 1, pp 166-174, issn 0033-8494Article

PHOSPHORUS DIFFUSION IN SILICON FROM A SPIN-ON P-DOPED SILICON OXIDE FILMMAR KM.1979; J. ELECTROCHEM. SOC.; USA; DA. 1979; VOL. 126; NO 7; PP. 1252-1257; BIBL. 30 REF.Article

METHODE D'ANALYSE DES CARACTERISTIQUES STATIQUES DES OPTRONS A BASE DE STRUCTURES A JONCTIONS P-NBALIM GM; BOJNOV VP; OLEKSENKO PF et al.1976; IZVEST. VYSSH. UCHEBN. ZAVED., PRIBOROSTR.; S.S.S.R.; DA. 1976; VOL. 19; NO 11; PP. 93-96; BIBL. 4 REF.Article

INFLUENCE D'UNE COMPENSATION HETEROGENE SUR LES MESURES DE CAPACITELEBEDEV AA; SOBOLEV NA; URUNBAEV BM et al.1982; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1982; VOL. 16; NO 10; PP. 1874-1877; BIBL. 5 REF.Article

CAPACITANCE OF A BACK-TO-BACK DIODE PAIRGIRIJAVALLABHAN CP.1979; INDIAN J. PURE APPL. PHYS.; ISSN 0019-5596; IND; DA. 1979; VOL. 17; NO 11; PP. 777-778; BIBL. 1 REF.Article

BESTIMMUNG VON PN-UEBERGANSTIEFEN MIT HILFE EINER ELEKTRONENSONDE. = DETERMINATION DES PROFONDEURS DE JONCTIONS PN AU MOYEN D'UNE SONDE ELECTRONIQUEBACH K; KAISER N; MUHLE R et al.1977; EXPER. TECH. PHYS.; DTSCH.; DA. 1977; VOL. 25; NO 3; PP. 205-211; ABS. ANGL.; BIBL. 21 REF.Article

THERMALLY ASSISTED FIELD EMISSION NEAR PRECIPITATES IN P-N JUNCTIONS.BUSTA HH; WAGGENER HA.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 10; PP. 4385-4388; BIBL. 7 REF.Article

PERFECTION STRUCTURALE DE MONOCRISTAUX D'ANTIMONIURE D'INDIUM AVEC UNE JONCTION P-N DE CROISSANCE OBTENUS DANS LES CONDITIONS DE VOL ORBITALSHUL'PINA IL; SOROKIN LM; RAUKHMAN MR et al.1981; FIZ. TVERD. TELA; ISSN 0367-3294; SUN; DA. 1981; VOL. 23; NO 10; PP. 3043-3049; BIBL. 17 REF.Article

METHODE DE DECORATION DES JONCTIONS P-N DANS LE SILICIUMKURMASHEV VI; PETROVICH VA.1979; ZAVODSK. LAB.; SUN; DA. 1979; VOL. 45; NO 2; PP. 146-147; BIBL. 2 REF.Article

DISPOSITIF POUR LA VISUALISATION DES IMAGES TOPOGRAPHIQUES RX DE STRUCTURE PN AU COURS DU PROCEDE DE LEUR PREPARATIONSHABOYAN SA.1977; IZVEST. AKAD. NAUK ARM. S.S.R., FIZ.; S.S.S.R.; DA. 1977; VOL. 12; NO 4; PP. 278-283; ABS. ARM. ANGL.; BIBL. 8 REF.Article

STUDY OF GROWN-IN DEFECTS AND EFFECT OF THERMAL ANNEALING IN AL0.3GA0.7AS AND GAAS LPE LAYERSLI SS; LIN CY; BEDAIR SM et al.1982; JOURNAL OF ELECTRONIC MATERIALS; ISSN 0361-5235; USA; DA. 1982; VOL. 11; NO 2; PP. 273-287; BIBL. 10 REF.Article

THE PN-JUNCTION TRANSITION REGIONGUCKEL H; THOMAS DC; DEMIRKOL A et al.1979; SOLID-STATE ELECTRON.; GBR; DA. 1979; VOL. 22; NO 9; PP. 829-830; BIBL. 5 REF.Article

INSTABILITE DE LA TENSION AUX BORNES D'UNE JONCTION P-N A PORTEURS CHAUDSVEJNGER AI.1977; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1977; VOL. 11; NO 7; PP. 1321-1326; BIBL. 8 REF.Article

A NOTE ON THE ASSUMPTION OF QUASIEQUILIBRIUM IN SEMI-CONDUCTOR JUNCTION DEVICES.VON ROOS O.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 12; PP. 5389-5391; BIBL. 11 REF.Article

INVESTIGATION OF THE AGING PROCESSES OF THE P-N JUNCTION BASED ON A SINGLE DISLOCATION.MIL'SHTEIN SK.1976; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1976; VOL. 23; NO 10; PP. 1184-1185; BIBL. 9 REF.Article

SIMPLE PHENOMENOLOGICAL MODELING OF TRANSITION-REGION CAPACITANCE OF FORWARD-BIASED P-N JUNCTION DIODES AND TRANSISTOR DIODESLINDHOLM FA.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 11; PART. 1; PP. 7606-7608; BIBL. 16 REF.Article

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