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PIN-BIPOLAR OPTICAL RECEIVER USING A HIGH-FREQUENCY HIGH-BETA TRANSISTORMITCHELL AF; O'MAHONY MJ; BOXALL BA et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 12; PP. 445-447; BIBL. 6 REF.Article

DESIGN AND DEVELOPMENT OF L-BAND PIN DIODE SPDT SWITCHESSARKAR BK.1980; J. INSTIT. ELECTRON. TELECOMMUNIC. ENGRS; IND; DA. 1980; VOL. 26; NO 10; PP. 550-552; BIBL. 4 REF.Article

SURFACE-PASSIVATED LOW DARK CURRENT INGAAS PIN PHOTODIODESNICKEL H; KUPHAL E.1983; JOURNAL OF OPTICAL COMMUNICATIONS; ISSN 0173-4911; DEU; DA. 1983; VOL. 4; NO 2; PP. 63-67; BIBL. 19 REF.Article

A SIMPLIFIED THEORY OF THE P-I-N DIODE.BERZ F.1977; SOLID-STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 8; PP. 709-714; BIBL. 11 REF.Article

IONISATION PAR CHOCS DANS UNE STRUCTURE N-I-P A BANDE VARIABLEARUTYUNYAN VM; PETROSYAN SG.1980; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1980; VOL. 14; NO 10; PP. 2001-2006; BIBL. 13 REF.Article

SIMPLE METHOD OF FABRICATING AND PASSIVATING HIGH POWER PIN DIODES.ROSEN A; SWARTZ GA; DUIGON FC et al.1978; J. ELECTROCHEM. SOC.; USA; DA. 1978; VOL. 125; NO 4; PP. 680-682; BIBL. 5 REF.Article

Transient current changes induced in pin-diodes by nanosecond electron pulsesLEONHARDT, J. W; GOLDNER, R; BOS, J et al.Radiation physics and chemistry. 1984, Vol 24, Num 5-6, pp 591-592, issn 0146-5724Article

NUMERICAL SOLUTIONS FOR SURFACE ELECTRIC FIELD DISTRIBUTIONS IN AVALANCHING P-I-N POWER DIODESPATHAK VK; GOWAR J.1983; IEE PROCEEDINGS. PART I. SOLID-STATE AND ELECTRON DEVICES; ISSN 0143-7100; GBR; DA. 1983; VOL. 130; NO 1; PP. 17-23; BIBL. 7 REF.Article

COMPUTER-AIDED DESIGN CONSIDERATION ON LOW-LOSS P-I-N DIODESNAKAGAWA A; KURATA M.1981; IEEE TRANS. ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1981; VOL. 28; NO 3; PP. 231-237; BIBL. 9 REF.Article

1/f Mobility fluctuations in p-i-n and p-ν-n diodesKLEINPENNING, T. G. M.Physica B, Condensed matter. 1988, Vol 154, Num 1, pp 27-34Article

RAMP RECOVERY IN P-I-N DIODESBERZ F.1980; SOLID-STATE ELECTRON.; GBR; DA. 1980; VOL. 23; NO 7; PP. 783-792; BIBL. 9 REF.Article

GET BACK TO BASICS WITH STEPS ATTENUATOR DESIGNANANASSO F.1979; MICROWAVES; USA; DA. 1979; VOL. 18; NO 2; PP. 76-81; (4 P.); BIBL. 10 REF.Article

INFLUENCE DE L'IRRADIATION NEUTRONIQUE ET DU RECUIT SUR LES CARACTERISTIQUES DES STRUCTURES P-I-NKORSHUNAW FP; KAZHEHKYI TV.1977; VESCI AKAD. NAVUK B.S.S.R., FIZ. MAT. NAVUK; S.S.S.R.; DA. 1977; NO 4; PP. 95-99; BIBL. 6 REF.Article

ATTENUATEUR GUIDE D'ONDE, LARGE BANDE, ELECTRIQUEMENT CONTROLABLE, AVEC UNE LONGUEUR REDUITE DU DOMAINE D'INTERACTIONAL'TSHULER YU G; USOV N YU.1980; IZVEST. VYSSH. UCHEBN. ZAVED., RADIOELEKTRON.; UKR; DA. 1980; VOL. 23; NO 2; PP. 54-59; BIBL. 10 REF.Article

ELECTROLUMINESCENCE IN AMORPHOUS SILICON P-I-N JUNCTIONSNASHASHIBI TS; AUSTIN IG; SEARLE TM et al.1982; PHILOS. MAG., B; ISSN 0141-8637; GBR; DA. 1982; VOL. 45; NO 6; PP. 553-571; BIBL. 17 REF.Article

THE RESONANT MODE PIN SWITCHCHAFFIN RJ.1980; MICROWAVE J.; ISSN 0026-2897; USA; DA. 1980; VOL. 23; NO 12; PP. 33-36; BIBL. 5 REF.Article

STEP RECOVERY OF P-I-N DIODESBERZ F.1979; SOLID-STATE ELECTRON.; GBR; DA. 1979; VOL. 22; NO 11; PP. 927-932; BIBL. 14 REF.Article

Bruit de mode transverse d'une diode P.I.N = Transversal mode noise of a P.I.N. diodeBLANC, F; FANGUIN, R; RAOULT, G et al.Annales françaises des microtechniques et de chronométrie. 1984, Vol 38, Num 1-4, issn 0294-1228, non pagArticle

Field-drifting resonance tunneling through a-Si:H/a-Si1-xCx:H double barrier in the p-i-n-structureJIANG, Y. L; HWANG, H. L.Japanese journal of applied physics. 1988, Vol 27, Num 12, pp L2434-L2437, issn 0021-4922, 2Article

Equivalence of electrons and holes in a-Si p-s-n diodesKUSIAN, W; PFLEIDERER, H; BULLEMER, B et al.Journal of applied physics. 1988, Vol 64, Num 10, pp 5220-5224, issn 0021-8979Article

Zuverlässiger Zweiwegeschalter mit PIN-Dioden = Un commutateur fiable à deux voies avec des diodes à couche intrinsèque = Reliable two-way switch with PIN diodesMICHLER, E.Nachrichtentechnik. Elektronik. 1984, Vol 34, Num 2, pp 49-50, issn 0323-4657Article

TEMPERATURE RISE IN MICROWAVE P-I-N DIODES: A COMPUTER AIDED ANALYSISRAMAMURTHY V; CHATURVEDI PK; KAKATI D et al.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 5; PP. 445-453; BIBL. 9 REF.Article

POUR VOS MONTAGES HYPERFREQUENCES: DES DIODES PIN ET SCHOTTKY EN "BEAM LEAD"WARGIN JJ.1981; ELECTRON. IND.; FRA; DA. 1981; NO 8; PP. 35-38Article

DESIGN OF LOADED-LINE P-I-N DIODE PHASE SHIFTER CIRCUITSBAHL IJ; GUPTA KC.1980; I.E.E.E. TRANS. MICROWAVE THEORY TECH.; USA; DA. 1980; VOL. 28; NO 3; PP. 219-224; BIBL. 14 REF.Article

P-I-N DIODE RECOVERY STORAGE TIMESLATTER JAG; WHELAN JP.1980; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1980; VOL. 23; NO 12; PP. 1235-1242; BIBL. 13 REF.Article

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