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Surface compensation of p-InP as observed by capacitance dispersionAHRENKIEL, R. K; SHELDON, P; DUNLAVY, D et al.Applied physics letters. 1983, Vol 43, Num 7, pp 675-676, issn 0003-6951Article

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The effect of gate-oxide process variations on the long-term fading of PMOS dosimetersKELLEHER, A; MCDONNELL, N; O'NEILL, B et al.Sensors and actuators. A, Physical. 1993, Vol 37-38, pp 370-374, issn 0924-4247Conference Paper

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Hydrogen photo-evolution over the spinel CuCr₂O₄BOUMAZA, Souhila; BOUARAB, Rabah; TRARI, Mohamed et al.Energy conversion and management. 2009, Vol 50, Num 1, pp 62-68, issn 0196-8904, 7 p.Article

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