Compositional dependence of permittivity in quaternary III-V semiconductor compoundsPAL, B. B.Solid-state electronics. 1985, Vol 28, Num 12, pp 1235-1239, issn 0038-1101Article

Enhanced optical effect in a high electron mobility transistor device : Emerging optoelectronic technologiesPAL, B. B; MITRA, H.Optical engineering (Bellingham. Print). 1993, Vol 32, Num 4, pp 687-691, issn 0091-3286Article

A new infrared avalanche photodiode for long distance fiber optic communicationCHAKRABARTI, P; PAL, B. B.Solid-state electronics. 1988, Vol 31, Num 1, pp 1-3, issn 0038-1101Article

Computer simulation of ion-implanted DAR Impatt around 94 GHz under steady state conditionCHAKRABARTI, P; PAL, B. B.Physica status solidi. A. Applied research. 1986, Vol 94, Num 1, pp 305-313, issn 0031-8965Conference Paper

Theoretical characterisation of a superlattice avalanche photodiodePAL, B. B; CHAKRABARTI, P.Applied physics. A, Solids and surfaces. 1987, Vol 4, Num 3, pp 173-177, issn 0721-7250Article

Incidence and molecular analysis of Vibrio cholerae associated with cholera outbreak subsequent to the super cyclone in Orissa, IndiaCHHOTRAY, G. P; PAL, B. B; KHUNTIA, H. K et al.Epidemiology and infection. 2002, Vol 128, Num 2, pp 131-138, issn 0950-2688Article

Theoretical studies on the transient behavior of high electron mobility phototransistorsMITRA, H; SINGH, S; PAL, B. B et al.Optical engineering (Bellingham. Print). 1995, Vol 34, Num 8, pp 2475-2480, issn 0091-3286Article

Proximity exposure compensation and resit debris formation in electron beam lithographyDESHMUKH, P. R; SINGH, M; RANGRA, K. J et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 1, pp 179-182, issn 0734-211XConference Paper

A modified I-V relation for ion-implanted Si OPFETsPAL, B. B; CHATTOPADHYAY, S. N.Solid-state electronics. 1991, Vol 34, Num 10, pp 1183-1184, issn 0038-1101Article

Effect of radiation and surface recombination on the characteristics of an ion-implanted GaAs MESFETSUNITA MISHRA; SINGH, V. K; PAL, B. B et al.I.E.E.E. transactions on electron devices. 1990, Vol 37, Num 1, pp 2-10, issn 0018-9383, 9 p.Article

Electrical characteristics of an ion-implanted p-Ga_0.47In_0.53As MESFET at different Schottky barrier heightsCHATTOPADHYAY, S. N; DUTTA, D; PAL, B. B et al.Solid-state electronics. 1990, Vol 33, Num 7, pp 963-967, issn 0038-1101, 5 p.Article

Analytical modeling of an ion-implanted silicon MESFET in post-anneal conditionCHATTOPADHYAY, S. N; PAL, B. B.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 1, pp 81-87, issn 0018-9383, 1Article

Carrier frequency-dependent intrinsic parameters in an ion-implanted silicon photo-MESFETSINGH, V. K; PAL, B. B.Applied physics. A, Solids and surfaces. 1987, Vol 44, Num 4, pp 361-364, issn 0721-7250Article

Enhancement mode MESFET under optically controlled conditionBANDHAWAKAR, Garima; PAL, B. B.SPIE proceedings series. 2002, pp 182-186, isbn 0-8194-4500-2, 2VolConference Paper

Phenomenon of resist debris formation in electron beam lithography and its possible applicationDESHMUKH, P. R; RANGRA, K. J; SINGH, M et al.Vacuum. 1996, Vol 47, Num 11, pp 1305-1311, issn 0042-207XConference Paper

Time dependent analysis of an ion-implanted GaAs OPFETPAL, B. B; CHATTOPADHYAY, S. N; SUNITA MISHRA et al.I.E.E.E. transactions on electron devices. 1994, Vol 41, Num 4, pp 491-498, issn 0018-9383Article

Noise characteristics of a superlattice avalanche photodiodeCHAKRABARTI, P; CHOUDHURY, S. C; PAL, B. B et al.Applied physics. A, Solids and surfaces. 1989, Vol 48, Num 4, pp 331-334, issn 0721-7250Article

Effect of diffusion and modulated frequency in an ion-implanted OPFETSINGH, V. K; PAL, B. B.I.E.E.E. transactions on electron devices. 1987, Vol 34, Num 11, pp 2270-2279, issn 0018-9383Article

Hot-electron drift velocity in III-V semiconductors under the condition of impact ionizationSINGH, S. R; PAL, B. B.Applied physics. A, Solids and surfaces. 1987, Vol 43, Num 1, pp 53-60, issn 0721-7250Article

Two sequential outbreaks in two villages illustrate the various modes of transmission of choleraDAS, A; MANICKAM, P; HUTIN, Y et al.Epidemiology and infection. 2009, Vol 137, Num 6, pp 906-912, issn 0950-2688, 7 p.Article

Analytical modeling of a DCFL inverter using normally-off GaAs MESFET's under dark and illuminated conditionsJIT, S; BANDHAWAKAR, Garima; PAL, B. B et al.Solid-state electronics. 2005, Vol 49, Num 4, pp 628-633, issn 0038-1101, 6 p.Article

Effect of illumination on Schrοdinger wave function in the quantum well of MODFET and related device characteristicsPAL, B. B.SPIE proceedings series. 2002, pp 783-790, isbn 0-8194-4500-2, 2VolConference Paper

Optically controlled E-MESFET for VLSI applicationBANDHAWAKAR, Garima; PAL, B. B.SPIE proceedings series. 2001, pp 43-54, isbn 0-8194-4339-5Conference Paper

Frequency-dependent characteristics of an ion-implanted GaAs MESFET with opaque gate under illuminationROY, N. S; PAL, B. B; KHAN, R. U et al.Journal of lightwave technology. 2000, Vol 18, Num 2, pp 221-229, issn 0733-8724Article

Effect of signal-modulated optical radiation on the characteritics of a ModfetMITRA, H; SINGH, D. P; PAL, B. B et al.Applied physics. A, Solids and surfaces. 1993, Vol 56, Num 4, pp 335-341, issn 0721-7250Article