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HIGH FREQUENCY NOISE PROPERTIES OF A DOUBLE AVALANCHE REGION (DAR) IMPATT DIODEDATTA DN; PAL BB.1980; SOLID-STATE ELECTRON.; GBR; DA. 1980; VOL. 23; NO 4; PP. 377-382; BIBL. 7 REF.Article

GENERALISED SMALL SIGNAL ANALYSIS OF A DAR (DOUBLE AVALANCHE REGION) IMPATT DIODEDATTA DN; PAL BB.1982; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1982; VOL. 25; NO 6; PP. 435-439; BIBL. 12 REF.Article

AN ANALYTICAL EXPRESSION FOR SMALL-SIGNAL IMPEDANCE OF A P-N JUNCTION AVALANCHE DIODE HAVING UNEQUAL IONIZATION RATES & DRIFT VELOCITIES FOR HOLES & ELECTRONSPAL BB; ROY SK.1972; INDIAN J. PURE APPL. PHYS.; INDIA; DA. 1972; VOL. 10; NO 3; PP. 192-196; BIBL. 14 REF.Serial Issue

KINETICS OF THE OXIDATION OF ANTIMONY (III) BY VANADIUM (V)PAL BB; SEN GUPTA KK.1975; INORG. CHEM.; U.S.A.; DA. 1975; VOL. 14; NO 9; PP. 2268-2271; BIBL. 24 REF.Article

EFFECT OF FINITE CURRENT MULTIPLICATION FACTOR IN THE AVALANCHE ZONE ON THE HIGH-FREQUENCY NOISE PROPERTIES OF READ DIODES.PAL BB; SOM B; ROY SK et al.1976; PROC. I.E.E.E.; U.S.A.; DA. 1976; VOL. 64; NO 8; PP. 1252-1254; BIBL. 10 REF.Article

A SIMPLE COMPUTER METHOD FOR THE STUDY OF FIELD & CURRENT DENSITY PROFILES IN P-I-N AVALANCHE DIODESGHOSH R; ROY SK; PAL BB et al.1979; INDIAN J. PURE APPL. PHYS.; ISSN 0019-5596; IND; DA. 1979; VOL. 17; NO 9; PP. 563-566; BIBL. 12 REF.Article

KINETICS OF THE OXIDATION OF ARSENIC(III) BY VANADIUM(V)PAL BB; MUKHERJEE DC; SENGUPTA KK et al.1972; J. INORG. NUCL. CHEM.; G.B.; DA. 1972; VOL. 34; NO 11; PP. 3433-3441; BIBL. 22 REF.Serial Issue

A SMALL SIGNAL ANALYSIS OF AN IMPATT DEVICE HAVING TWO AVALANCHE LAYERS INTERSPACED BY A DRIFT LAYER.SOM B; PAL BB; ROY SK et al.1974; SOLID-STATE ELECTRON.; G.B.; DA. 1974; VOL. 17; NO 10; PP. 1029-1038; BIBL. 8 REF.Article

KINETICS OF THE METAL-ION OXIDATION OF PHENYLPHOSPHONOUS ACID IN SOLUTION. I. OXIDATION BY VANADIUM(V)SEN GUPTA KK; CHAKLADAR JK; PAL BB et al.1973; J. CHEM. SOC., PERKIN TRANS., 2; G.B.; DA. 1973; NO 7; PP. 926-929; BIBL. 22 REF.Serial Issue

EQUIVALENT CIRCUIT ANALYSIS OF A SYSTEM OF COUPLED HELICAL TRANSMISSION LINES IN A COMPLEX ENVIRONMENTSINGH VN; BASU BN; PAL BB et al.1983; JOURNAL OF APPLIED PHYSICS; ISSN 0021-8979; USA; DA. 1983; VOL. 54; NO 7; PP. 4141-4146; BIBL. 6 REF.Article

COMPUTER ANALYSIS OF DC FIELD AND CURRENT-DENSITY PROFILES OF DAR IMPATT DIODEDATTA DN; PATI SP; BANERJEE JP et al.1982; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 11; PP. 1813-1816; BIBL. 9 REF.Article

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