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A transmission electron microscope study of the effect of cyclohexane adsorption on the crystallization of Pd₈₀Si₂₀ metallic glassKOWBEL, W; BROWER, W. E. JR.Journal of catalysis (Print). 1986, Vol 101, Num 2, pp 262-267, issn 0021-9517Article

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SCHOTTKY BARRIER HEIGHT MEASUREMENT BY ELECTRON-BEAM INDUCED VOLTAGEHUANG HCW; ALIOTTA CF; HO PS et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 1; PP. 54-56; BIBL. 10 REF.Article

PD₂SI SURFACES THERMALLY ENRICHED IN SILICON: EVIDENCE OF NEW SI:PD BONDSABBATI I; ROSSI G; BRAICOVICH RL et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 11; PP. 6994-6996; BIBL. 14 REF.Article

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Current-voltage characteristics of Pd₂Si based Schottky diodes on p-type (111) silicon and evaluation of their barrier heightsSUBHASH CHAND; JITENDRA KUMAR.Solid-state electronics. 1995, Vol 38, Num 5, pp 1103-1104, issn 0038-1101Article

Reflection electron microscopy observation of formation process of palladium silicide islands on silicon (111) surfaceTAKEGUCHI, Masaki; TANAKA, Miyoko; YASUDA, Hidehiro et al.Scripta materialia. 2001, Vol 44, Num 8-9, pp 2363-2367, issn 1359-6462Conference Paper

Effects of phosphorus implantation and post annealing on palladium silicide Schottky barrier diode characteristicsKIKUCHI, A.Japanese journal of applied physics. 1984, Vol 23, Num 10, pp 1345-1347, issn 0021-4922, 1Article

L-edge x-ray absorption resonances in palladium silicides and palladium metal = Résonances d'absorption RX de seuil L dans les siliciures de palladium et dans le palladium métalliqueROSSI, G; JAEGER, R; STÖHR, J et al.Physical review. B, Condensed matter. 1983, Vol 27, Num 8, pp 5154-5157, issn 0163-1829Article

Reduction of contact resistivity by As redistribution during Pd₂Si formationOHDOMARI, I; HORI, M; YONEDA, K et al.Journal of applied physics. 1983, Vol 54, Num 8, pp 4679-4682, issn 0021-8979Article

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