Characterization of device parameters in high-temperature metal-oxide-semiconductor field-effect transistors in β-SiC thin filmsPALMOUR, J. W; KONG, H. S; DAVIS, R. F et al.Journal of applied physics. 1988, Vol 64, Num 4, pp 2168-2177, issn 0021-8979Article

Chemical etching of ion implanted amorphous silicon carbideEDMOND, J. A; PALMOUR, J. W; DAVIS, R. F et al.Journal of the Electrochemical Society. 1986, Vol 133, Num 3, pp 650-652, issn 0013-4651Article

Relationship between critical charge density, holding current, and maximum current density in optically triggered silicon carbide thyristorsYUFEREV, V. S; LEVINSHTEIN, M. E; PALMOUR, J. W et al.Semiconductor science and technology. 2013, Vol 28, Num 10, issn 0268-1242, 105009.1-105009.6Article

Use of minority carriers in noise spectroscopy for the determination of local level parameters in 6H-SiCPALMOUR, J. W; LEVINSHTEIN, M. E; RUMYANTSEV, S. L et al.Semiconductor science and technology. 1996, Vol 11, Num 8, pp 1146-1150, issn 0268-1242Article

Nature of the 1/f noise in 6H-SiCLEVINSHTEIN, M. E; PALMOUR, J. W; RUMYANTSEV, S. L et al.Semiconductor science and technology. 1994, Vol 9, Num 11, pp 2080-2084, issn 0268-1242Article

Optical triggering of 12 kV, 100 A 4H-SiC thyristorsRUMYANTSEV, S. L; LEVINSHTEIN, M. E; SHUR, M. S et al.Semiconductor science and technology. 2012, Vol 27, Num 1, issn 0268-1242, 015012.1-015012.4Article

A model of the 1/f noise in a forward-biased p-n diodeDMITRIEV, A. P; LEVINSHTEIN, M. E; KOLESNIKOVA, E. N et al.Semiconductor science and technology. 2008, Vol 23, Num 1, issn 0268-1242, 015011.1-015011.5Article

Defects in SiC substrates and epitaxial layers affecting semiconductor device performanceMÜLLER, St. G; SUMAKERIS, J. J; TSVETKOV, V. F et al.EPJ. Applied physics (Print). 2004, Vol 27, Num 1-3, pp 29-35, issn 1286-0042, 7 p.Conference Paper

Simulation, characterization and design of epitaxial emitter NPN 4H-SiC BJTs for amplifier applicationsLOSEE, P. A; GUTMANN, R. J; CHOW, T. P et al.IEEE Lester Eastman conference on high performance devices. 2002, pp 186-192, isbn 0-7803-7478-9, 7 p.Conference Paper

High current (1300 A) optical triggering of a 12 kV 4H-SiC thyristorRUMYANTSEV, S. L; LEVINSHTEIN, M. E; SHUR, M. S et al.Semiconductor science and technology. 2013, Vol 28, Num 4, issn 0268-1242, 045016.1-045016.3Article

Analysis of the turn-on process in 6 kV 4H-SiC junction diodesMNATSAKANOV, T. T; LEVINSHTEIN, M. E; IVANOV, P. A et al.Semiconductor science and technology. 2005, Vol 20, Num 1, pp 62-67, issn 0268-1242, 6 p.Article

A vertically integrated bipolar storage cell in 6H silicon carbide for nonvolatile memory applicationsXIE, W; COOPER, J. A; MELLOCH, M. R et al.IEEE electron device letters. 1994, Vol 15, Num 6, pp 212-214, issn 0741-3106Article

Temperature dependence of the current-voltage characteristics of metal-semiconductor field-effect transistors in n-type β-SiC grown via chemical vapor depositionKONG, H. S; PALMOUR, J. W; GLASS, J. T et al.Applied physics letters. 1987, Vol 51, Num 6, pp 442-444, issn 0003-6951Article

Optical triggering of high-voltage (18 kV-class) 4H-SiC thyristorsRUMYANTSEV, S. L; LEVINSHTEIN, M. E; SHUR, M. S et al.Semiconductor science and technology. 2013, Vol 28, Num 12, issn 0268-1242, 125017.1-125017.4Article

Analytical and numerical studies of p+-emitters in silicon carbide bipolar devicesLEVINSHTEIN, M. E; MNATSAKANOV, T. T; AGARWAL, A. K et al.Semiconductor science and technology. 2011, Vol 26, Num 5, issn 0268-1242, 055024.1-055024.8Article

Experimental verification of a new approach to the analysis of the quasineutral carrier transport in semiconductors and semiconductor structuresSHUMAN, V. B; MNATSAKANOV, T. T; LEVINSHTEIN, M. E et al.Semiconductor science and technology. 2011, Vol 26, Num 8, issn 0268-1242, 085016.1-085016.7Article

Fundamental physical limitations on the blocking voltage of SiC rectifier diodesMNATSAKANOV, T. T; LEVINSHTEIN, M. E; POMORTSEVA, L. I et al.Semiconductor science and technology. 2009, Vol 24, Num 12, issn 0268-1242, 125010.1-125010.6Article

Forward current-voltage characteristics of silicon carbide thyristors and diodes at high current densitiesLEVINSHTEIN, M. E; PALMOUR, J. W; RUMYANTSEV, S. L et al.Semiconductor science and technology. 1998, Vol 13, Num 9, pp 1006-1010, issn 0268-1242Article

Steady state current-voltage characteristics of 4H-SiC thyristors at high and superhigh current densitiesLEVINSHTEIN, M. E; PALMOUR, J. W; RUMYANTSEV, S. L et al.Semiconductor science and technology. 1997, Vol 12, Num 11, pp 1498-1499, issn 0268-1242Article

Deep-level dominated current-voltage characteristics of buried implanted oxide silicon-on-insulatorDAS, K; PALMOUR, J. W; POSTHILL, J. B et al.IEEE electron device letters. 1989, Vol 10, Num 3, pp 135-137, issn 0741-3106Article

Dopant redistribution during thermal oxidation of monocrystalline beta-SiC thin filmsPALMOUR, J. W; DAVIS, R. F; KONG, H. S et al.Journal of the Electrochemical Society. 1989, Vol 136, Num 2, pp 502-507, issn 0013-4651, 6 p.Article

Fast turn-off of high voltage 4H-SiC npn BJTs from the saturation on-state regimeIVANOV, P. A; LEVINSHTEIN, M. E; PALMOUR, J. W et al.Semiconductor science and technology. 2010, Vol 25, Num 4, issn 0268-1242, 045030.1-045030.3Article

Channel mobility and on-resistance of vertical double implanted 4H-SiC MOSFETs at elevated temperaturesRUMYANTSEV, S. L; SHUR, M. S; LEVINSHTEIN, M. E et al.Semiconductor science and technology. 2009, Vol 24, Num 7, issn 0268-1242, 075011.1-075011.6Article

Current gain of 4H-SiC high-voltage BJTs at reduced temperaturesIVANOV, P. A; LEVINSHTEIN, M. E; PALMOUR, J. W et al.Semiconductor science and technology. 2007, Vol 22, Num 6, pp 613-615, issn 0268-1242, 3 p.Article

On the thermal stability of high-voltage rectifier diodesMNATSAKANOV, T. T; LEVINSHTEIN, M. E; FREIDLIN, A. S et al.Semiconductor science and technology. 2006, Vol 21, Num 9, pp 1244-1249, issn 0268-1242, 6 p.Article