RECOMBINATION IN THE SPACE-CHARGE REGION OF SCHOTTKY BARRIER SOLAR CELLSPANAYOTATOS P; CARD HC.1980; SOLID-STATE ELECTRON.; GBR; DA. 1980; VOL. 23; NO 1; PP. 41-47; BIBL. 21 REF.Article

RECOMBINATION VELOCITY AT GRAIN BOUNDARIES IN POLYCRYSTALLINE SI UNDER OPTICAL ILLUMINATIONPANAYOTATOS P; CARD HC.1980; I.E.E.E. ELECTRON DEVICE LETT.; USA; DA. 1980; VOL. 1; NO 12; PP. 263-266; BIBL. 14 REF.Article

DETERMINATION OF THE GRAIN BOUNDARY RECOMBINATION VELOCITY IN POLYCRYSTALLINE SILICON AS A FUNCTION OF ILLUMINATION FROM PHOTOCONDUCTANCE MEASUREMENTSPANAYOTATOS P; YANG ES; HWANG W et al.1982; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1982; VOL. 25; NO 5; PP. 417-422; BIBL. 16 REF.Article

THE EFFECTS OF ILLUMINATION ON THE DEPLETION-REGION RECOMBINATION CURRENTS IN SCHOTTKY-BARRIER SOLAR CELLS.PANAYOTATOS P; CARD HC; YANG ES et al.1977; PROC. I.E.E.E.; U.S.A.; DA. 1977; VOL. 65; NO 8; PP. 1213; BIBL. 1 REF.Article

An improved presentation of the potential profile in linearly graded p-n junctionsJINDAL, C; PANAYOTATOS, P.I.E.E.E. transactions on electron devices. 1987, Vol 34, Num 8, pp 1832-1834, issn 0018-9383, 1Article

A Si MEMS microbearing with integrated safety sensors for surgical applicationsHORVATH, I; PANAYOTATOS, P; YICHENG LU et al.Microelectronics journal. 2001, Vol 32, Num 1, pp 1-9, issn 0959-8324Article

An approach to the optimal design of p-n heterojunction solar cells using thin film organic semiconductorsPANAYOTATOS, P; BIRD, G; SAUERS, R et al.Solar cells. 1987, Vol 21, pp 301-311, issn 0379-6787Conference Paper

Improved p-n heterojunction solar cells employing thin film organic semiconductorsPANAYOTATOS, P; PARIKH, D; SAUERS, R et al.Solar cells. 1986, Vol 18, Num 1, pp 71-84, issn 0379-6787Article

Selective etching during the electrochemical C-V profiling of PM-HEMTsKAYAMBAKI, M; TSAGARAKI, K; LAGADAS, M et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2001, Vol 80, Num 1-3, pp 164-167, issn 0921-5107Conference Paper

Generation and annihilation of antiphase domain boundaries in GaAs on Si grown by molecular beam epitaxyGEORGAKILAS, A; STOEMENOS, J; TSAGARAKI, K et al.Journal of materials research. 1993, Vol 8, Num 8, pp 1908-1921, issn 0884-2914Article

Photoreflectance as a non-destructive, room-temperature technique for routine testing of PM-HEMT structuresANDROULIDAKI, M; LAGADAS, M; MICHELAKIS, K et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1999, Vol 66, Num 1-3, pp 141-145, issn 0921-5107Conference Paper

Regent advances in optimally designed p-n organic semiconductor solar cellsPANAYOTATOS, P; WHITLOCK, J; SAUERS, R. R et al.Photovoltaic specialists conference. 19. 1987, pp 889-894Conference Paper

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Heterojunction diodes nGaAs/pSi with ideal characteristicsAPERATHITIS, E; KAYIAMBAKI, M; FOUKARAKI, V et al.Applied surface science. 1996, Vol 102, pp 208-211, issn 0169-4332Conference Paper

Investigations of materials and device structures for organic semiconductor solar cellsWHITLOCK, J. B; PANAYOTATOS, P; SHARMA, G. D et al.Optical engineering (Bellingham. Print). 1993, Vol 32, Num 8, pp 1921-1934, issn 0091-3286Article

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Asymmetric Fabry-Perot p-i-n multiple quantum well optical modulators grown on silicon and GaAs substratesDIMOULAS, A; ZEKENTES, K; APERATHITIS, E et al.Superlattices and microstructures. 1992, Vol 12, Num 2, pp 145-149, issn 0749-6036Article

Effect of temperature on GaAs/AlGaAs multiple quantum well solar cellsAPERATHITIS, E; SCOTT, C. G; SANDS, D et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1998, Vol 51, Num 1-3, pp 85-89, issn 0921-5107Conference Paper

Effects of Si(100) tilting angle and prelayer conditions on GaAs/Si heterostructuresGEORGAKILAS, A; PAPAVASSILIOU, C; CONSTANTINIDIS, G et al.Applied surface science. 1996, Vol 102, pp 67-72, issn 0169-4332Conference Paper

Microwave performance of GaAs-on-Si MESFET's with Si buffer layersGEORGAKILAS, A; HALKIAS, G; CHRISTOU, A et al.I.E.E.E. transactions on electron devices. 1993, Vol 40, Num 3, pp 507-512, issn 0018-9383Article

Investigation of Si-substrate preparation for GaAs-on-Si MBE growthKAYAMBAKI, M; CALLEC, R; CONSTANTINIDIS, G et al.Journal of crystal growth. 1995, Vol 157, Num 1-4, pp 300-303, issn 0022-0248Conference Paper