Defect dynamics and the properties of amorphous silicon: a new perspectivePANTELIDES, S. T.Acta physica Polonica. A. 1988, Vol 73, Num 6, pp 861-877, issn 0587-4246Conference Paper

Defect dynamics and the Staebler-Wronski effect in hydrogenated amorphous siliconPANTELIDES, S. T.Physical review. B, Condensed matter. 1987, Vol 36, Num 6, pp 3479-3482, issn 0163-1829Article

Native defects and diffusion in amorphous silicon - a revisitPANTELIDES, S. T.Solid state communications. 1992, Vol 84, Num 1-2, pp 221-225, issn 0038-1098Article

Effect of hydrogen on shallow dopants in crystalline siliconPANTELIDES, S. T.Applied physics letters. 1987, Vol 50, Num 15, pp 995-997, issn 0003-6951Article

Mechanisms for peculiar low-temperature phenomena in hydrogenated amorphous siliconPANTELIDES, S. T.Physical review letters. 1987, Vol 58, Num 13, pp 1344-1347, issn 0031-9007Article

Temperature effects in atomic diffusion in siliconPANTELIDES, S. T.Physical review. B, Condensed matter. 1987, Vol 36, Num 6, pp 3462-3464, issn 0163-1829Article

Defects in amorphous silicon: a new perspectivePANTELIDES, S. T.Physical review letters. 1986, Vol 57, Num 23, pp 2979-2982, issn 0031-9007Article

Defect formation and hysteretic inter-tube displacement in multi-wall carbon nanotubesTSETSERIS, L; PANTELIDES, S. T.Carbon (New York, NY). 2011, Vol 49, Num 2, pp 581-586, issn 0008-6223, 6 p.Article

Graphene: An impermeable or selectively permeable membrane for atomic species?TSETSERIS, L; PANTELIDES, S. T.Carbon (New York, NY). 2014, Vol 67, pp 58-63, issn 0008-6223, 6 p.Article

Charging of molecules during transportGOHDA, Y; PANTELIDES, S. T.Nano letters (Print). 2005, Vol 5, Num 7, pp 1217-1220, issn 1530-6984, 4 p.Article

Adatom complexes and self-healing mechanisms on graphene and single-wall carbon nanotubesTSETSERIS, L; PANTELIDES, S. T.Carbon (New York, NY). 2009, Vol 47, Num 3, pp 901-908, issn 0008-6223, 8 p.Article

Vacancies, interstitials and their complexes in titanium carbideTSETSERIS, L; PANTELIDES, S. T.Acta materialia. 2008, Vol 56, Num 12, pp 2864-2871, issn 1359-6454, 8 p.Article

Migration, incorporation, and passivation reactions of molecular hydrogen at the Si-SiO₂ interfaceTSETSERIS, L; PANTELIDES, S. T.Physical review B. Condensed matter and materials physics. 2004, Vol 70, Num 24, pp 245320.1-245320.6, issn 1098-0121Article

Modification of the electronic properties of rubrene crystals by water and oxygen-related speciesTSETSERIS, L; PANTELIDES, S. T.Organic electronics (Print). 2009, Vol 10, Num 2, pp 333-340, issn 1566-1199, 8 p.Article

Role of electron-hole interactions in the optical spectra of metals = Rôle des interactions électron-trou dans les spectres optiques des métauxMULA, G; CAR, R; PANTELIDES, S. T et al.Physical review letters. 1987, Vol 58, Num 13, pp 1367-1370, issn 0031-9007Article

Electron-hole exchange transitions at defects in semiconductorsFEENSTRA, R. M; PANTELIDES, S. T.Physical review. B, Condensed matter. 1985, Vol 31, Num 6, pp 4083-4085, issn 0163-1829Article

Optically active defects in SiO₂: The nonbridging oxygen center and the interstitial OH moleculeBAKOS, T; RASHKEEV, S. N; PANTELIDES, S. T et al.Physical review B. Condensed matter and materials physics. 2004, Vol 70, Num 7, pp 075203.1-075203.9, issn 1098-0121Article

Oxygen chemisorption on Au nanoparticlesFRANCESCHETTI, A; PENNYCOOK, S. J; PANTELIDES, S. T et al.Chemical physics letters. 2003, Vol 374, Num 5-6, pp 471-475, issn 0009-2614, 5 p.Article

Entropy-driven metastabilities in defects in semiconductorsHAMILTON, B; PEAKER, A. R; PANTELIDES, S. T et al.Physical review letters. 1988, Vol 61, Num 14, pp 1627-1630, issn 0031-9007Article

Quantitative analysis of EPR and electron-nuclear double resonance spectra of D centers in amorphous silicon: dangling versus floating bondsSTATHIS, J. H; PANTELIDES, S. T.Physical review. B, Condensed matter. 1988, Vol 37, Num 11, pp 6579-6582, issn 0163-1829Article

Screening in Nanowires and Nanocontacts: Field Emission, Adhesion Force, and Contact ResistanceZHANG, X.-G; PANTELIDES, S. T.Nano letters (Print). 2009, Vol 9, Num 12, pp 4306-4310, issn 1530-6984, 5 p.Article

First-principles studies on organic electronic materialsTSETSERIS, L; PANTELIDES, S. T.EPJ. Applied physics (Print). 2009, Vol 46, Num 1, issn 1286-0042, 12511.1-12511.1Conference Paper

H₂O and O₂ molecules in amorphous SiO₂: defect formation and annihilation mechanismsBAKES, T; RASHKEEV, S. N; PANTELIDES, S. T et al.Physical review B. Condensed matter and materials physics. 2004, Vol 69, Num 19, pp 195206.1-195206.9, issn 1098-0121Article

Theory of off-center impurities in semiconductorsPANTELIDES, S. T; HARRISON, W. A; YNDURAIN, F et al.Physical review. B, Condensed matter. 1986, Vol 34, Num 8, pp 6038-6040, issn 0163-1829, part 2Article

Electronic structure and identification of deep defects in GaPSCHEFFLER, M; BERNHOLC, J; LIPARI, N. O et al.Physical review. B, Condensed matter. 1984, Vol 29, Num 6, pp 3269-3282, issn 0163-1829Article