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LA MESURE DES PARAMETRES STATIQUES DES TRANSISTORS SOUS CONTROLE AUTOMATIQUEKAPLAN GD; KASPEROVICH NL.1977; IZMERITEL. TEKH.; S.S.S.R.; DA. 1977; NO 1; PP. 66-68; BIBL. 8 REF.Article

SEMICONDUCTOR MEASUREMENT TECHNOLOGY: MEASUREMENT OF TRANSISTOR SCATTERING PARAMETERS.ROGERS GJ; SAWYER DE; JESCH RL et al.1975; NATION. BUR. STAND., SPEC. PUBL.; U.S.A.; DA. 1975; NO 400-5; PP. (52P.); H.T. 1; BIBL. 5 REF.Article

SPARAMETERS SIMPLIFY ACCURATE VCO-DESIGN.STRID G.1975; MICROWAVES; U.S.A.; DA. 1975; VOL. 14; NO 5; PP. 34-40 (4P.); BIBL. 6 REF.Article

DETERMINATION DES PARAMETRES DE DIFFUSION D'UN TRANSISTOR A L'AIDE D'UN ORDINATEURBOVA NT; EFREMOV YU G; ZAIKIN BM et al.1975; IZVEST. VYSSH. UCHEBN. ZAVED., RADIOELEKTRON.; S.S.S.R.; DA. 1975; VOL. 18; NO 1; PP. 115-117; BIBL. 3 REF.Article

HF-PARAMETERBESTIMMUNG DES BIPOLARTRANSISTORS. = DETERMINATION DES PARAMETRES HF DU TRANSISTOR BIPOLAIRERODIG G.1977; NACHR.-TECH., ELEKTRON.; DTSCH.; DA. 1977; VOL. 27; NO 4; PP. 157-159; BIBL. 3 REF.Article

APPAREIL POUR LA MESURE DES PARAMETRES EN PETITS SIGNAUX DES TRANSISTORS A EFFET DE CHAMPGALKIN VN.1974; IZMERITEL. TEKH.; S.S.S.R.; DA. 1974; NO 4; PP. 66-68; BIBL. 4 REF.Article

ZUR TEMPERATURABHAENGIGKEIT DER HF-KENNGROESSEN VON PLANARTRANSISTOREN = SUR LES VARIATIONS EN FONCTION DE LA TEMPERATURE DES PARAMETRES HAUTE FREQUENCE DE TRANSISTORS PLANAIRESBAUMANN P; SEIDEL G.1973; NACH.-TECH., ELEKTRON.; DTSCH.; DA. 1973; VOL. 23; NO 5; PP. 183-184; (2. WISS. KONG. INGENIEURHOCHSCH. MITTWEIDA. EINSATZ PROZESSMESSTECH. QUALITAETSSICHERUNG ERHOHUNG ZUVERLAESSIGKEIT TECHNOL. PROZESSES; MITTWEIDA; 1973)Conference Paper

H-PARAMETER REPRESENTATION OF TRANSISTOR NOISE.KAR M.1974; J. INSTIT. ELECTRON. TELECOMMUNIC. ENGRS; INDIA; DA. 1974; VOL. 20; NO 12; PP. 564-565; BIBL. 2 REF.Article

ESTIMACION DE LOS PARAMETROS DE UN MODELO DE TRANSISTOR BIPOLAR EN REGIMEN ESTATICO. = ESTIMATION DES PARAMETRES D'UN MODELE DE TRANSISTOR BIPOLAIRE EN REGIME STATIQUELORA TAMAYO D'OCON.1974; REV. R. ACAD. CI. EXACT. FIS. NAT. MADRID; ESP.; DA. 1974; VOL. 68; NO 3; PP. 611-621; ABS. ANGL.; BIBL. 9 REF.Article

DETERMINATION DES VALEURS DES PARAMETRES DU MODELE D'UN TRANSISTOR A L'AIDE DES CARACTERISTIQUES MESUREES SUR UN CIRCUIT DIPOLELESNICKI A.1974; ARCH. ELEKTROTECH.; POLSKA; DA. 1974; VOL. 23; NO 2; PP. 325-336; ABS. RUSSE ANGL.; BIBL. 6 REF.Article

DER MITLAUFEFFEKT UND SEINE ABHAENGIGKEIT VON DER SCHALTUNG. = L'EFFET DE TRACKING ET SA VARIATION AVEC LE CIRCUITGUTTLER P.1975; NACHR.-TECH., ELEKTRON.; DTSCH.; DA. 1975; VOL. 25; NO 11; PP. 424-438 (7P.); ABS. RUSSE ANGL. FR.; BIBL. 8 REF.Article

CARACTERISTIQUES IMPULSIONNELLES ET PARAMETRES DU TRANSISTOR UTILISE DANS DES DISPOSITIFS A FORTS NIVEAUX DES SIGNAUXSMIRNOV GV.1973; IZVEST. VYSSH. UCHEBN. ZAVED., PRIBOROSTR.; S.S.S.R.; DA. 1973; VOL. 16; NO 1; PP. 97-100; BIBL. 4 REF.Serial Issue

MESURE DES PARAMETRES DE REFLEXION DES TRANSISTORSPLAVSKIJ LG.1972; IZMERITEL. TEKH.; S.S.S.R.; DA. 1972; NO 6; PP. 87-88; BIBL. 4 REF.Serial Issue

COMPUTE A TRANSISTOR'S FT FROM S-PARAMETER DATA.SANDERS DP.1978; MICROWAVES; USA; DA. 1978; VOL. 17; NO 8; PP. 74-76Article

P-MOSFET PARAMETERS AT CRYOGENIC TEMPERATURES.MADDOX RL.1976; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1976; VOL. 23; NO 1; PP. 16-21; BIBL. 38 REF.Article

SCATTERING AND NOISE PARAMETERS OF FOUR RECENT MICROWAVE BIPOLAR TRANSISTORS UP TO 12 GHZHARTMANN K; STRUTT MJO.1973; PROC. I.E.E.E.; U.S.A.; DA. 1973; VOL. 61; NO 1; PP. 133-135; BIBL. 4 REF.Serial Issue

A NULL METHOD FOR MEASURING THE PARAMETERS OF A FETSINGH BP; PRASADA RAO DBSJ.1978; INTERNATION. J. ELECTRON.; GBR; DA. 1978; VOL. 44; NO 2; PP. 193-198; BIBL. 3 REF.Article

SWITCHING TIMES OF A TRANSISTOR INVERTER DRIVEN IN ACTIVE REGION.GARUD GN; ASANARE KL.1976; J. INSTIT. ELECTRON. TELECOMMUNIC. ENGRS; INDIA; DA. 1976; VOL. 22; NO 12; PP. 759-761; BIBL. 7 REF.Article

A NOTE ON THE MEASUREMENT OF FET PARAMETERS.PRASADA RAO DBSJ; SINGH BP; DIKSHITULU KALLURI et al.1976; INTERNATION. J. ELECTRON.; G.B.; DA. 1976; VOL. 41; NO 5; PP. 521-523; BIBL. 4 REF.Article

EFFECT OF GAMMA -RADIATION ON SI-SIO2-MO/AU SYSTEMKASABOV JD; KASCHIEVA SB; STOYEV IG et al.1972; C.R. ACAD. BULG. SCI.; BULG.; DA. 1972; VOL. 25; NO 11; PP. 1491-1493; BIBL. 5 REF.Serial Issue

THE INFLUENCE OF THE BIASING CONDITIONS AND OF THE POWER DISSIPATED IN TRANSISTORS DURING IRRADIATION ON THE PERMANENT RADIATION DAMAGERAICU B.1972; REV. ROUMAINE PHYS.; ROUMAN.; DA. 1972; VOL. 17; NO 7; PP. 795-799; ABS. FRSerial Issue

ION-IMPLANTED-BASE-TRANSISTOR HFE DISPERSION AND LOW FREQUENCY NOISE PERFORMANCE.KOJI T.1975; N.E.C. RES. DEVELOP.; JAP.; DA. 1975; NO 36; PP. 37-41; BIBL. 4 REF.Article

MICROWAVE-TRANSISTOR POWER-AMPLIFIER DESIGN BY LARGE-SIGNAL GAMMA PARAMETERS.KOTZEBVE KL.1975; ELECTRON LETTERS; G.B.; DA. 1975; VOL. 11; NO 11; PP. 240-241; BIBL. 2 REF.Article

COMPARAISON DES PARAMETRES DE COUCHES PAR DIFFUSION A BASE D'ARSENIC REALISEES SOUS AMPOULE FERMEE ET DANS UN COURANT DE GAZKIZEMA IG; GAVRILYUK II; KARPLYUK AI et al.1972; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1972; NO 9; PP. 34-36; BIBL. BIBL. (3 REF.Serial Issue

DETERMINATION OF A MICROWAVE TRANSISTOR MODEL BASED ON AN EXPERIMENTAL STUDY OF ITS INTERNAL STRUCTURE.KRONQUIST RL; FOURRIER JY; PESTIE JP et al.1975; SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 11; PP. 949-963; BIBL. 15 REF.Article

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