Pascal and Francis Bibliographic Databases

Help

Search results

Your search

au.\*:("PARK YS")

Document Type [dt]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Publication Year[py]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Discipline (document) [di]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Results 1 to 25 of 52

  • Page / 3
Export

Selection :

  • and

THE FREQUENCY COMPONENTS OF FLUID-LIFT FORCES ACTING ON A CYLINDER OSCILLATING IN STILL WATERMCCONNELL KG; PARK YS.1982; EXP. MECH.; ISSN 0014-4851; USA; DA. 1982; VOL. 22; NO 6; PP. 216-222; BIBL. 13 REF.Article

ELECTRONIC COMPENSATION OF A FORCE TRANSDUCER FOR MEASURING FLUID FORCES ACTING ON AN ACCELERATING CYLINDERMCCONNELL KG; PARK YS.1981; EXP. MECH.; ISSN 0014-4851; USA; DA. 1981; VOL. 21; NO 4; PP. 169-172; BIBL. 6 REF.Article

SWITCHING AND MEMORY EFFECTS IN PHOSPHORUS-ION-IMPLANTED ZNSE DEVICES.SHIN BK; PARK YS.1974; PROC. I.E.E.E.; U.S.A.; DA. 1974; VOL. 62; NO 4; PP. 538-540; BIBL. 13 REF.Article

FLUX AND FLUENCE DEPENDENCE OF IMPLANTATION DISORDER IN GAAS SUBSTRATESANDERSON WJ; PARK YS.1978; J. APPL. PHYS.; USA; DA. 1978; VOL. 49; NO 8; PP. 4568-4570; BIBL. 11 REF.Article

PH-TEMPERATURE DEPENDENCE OF ORGANIC ACID TRANSPORT IN RAT KIDNEY SLICES.PARK YS; SOLOMON S.1977; AMER. J. PHYSIOL., RENAL FLUID ELECTROLYTE PHYSIOL.; U.S.A.; DA. 1977; VOL. 2; NO 5; PP. F382-F387; BIBL. 25 REF.Article

ELECTROREFLECTANCE MEASUREMENTS OF LATTICE DAMAGE IN ION IMPLANTED GAAS.ANDERSON WJ; PARK YS.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 7; PP. 3094-3098; BIBL. 26 REF.Article

EFFECTS OF INBREEDING AND GENETIC VARIANCES IN A NATURAL POPULATION OF TAMARACK (LARIX LARICINA (DU ROI) K. KOCH) IN EASTERN CANADAPARK YS; FOWLER DP.1982; SILVAE GENETICA; ISSN 0037-5349; DEU; DA. 1982; VOL. 31; NO 1; PP. 21-26; ABS. GER; BIBL. DISSEM.Article

AN ABRUPT DOPANT PROFILE IN GAAS PRODUCED BY TE IMPLANTATION.SHIN BK; PARK YS.1976; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1976; VOL. 123; NO 10; PP. 1588-1589; BIBL. 17 REF.Article

CHARACTERIZATION OF ION-IMPLANTED GAAS BY ELLIPSOMETRYQUIESUP KIM; PARK YS.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 4; PP. 2024-2029; BIBL. 21 REF.Article

INJECTION ELECTROLUMINESCENCE IN PHOSPHOROUS-ION-IMPLANTED ZNSE P-N JUNCTION DIODES.PARK YS; SHIN BK.1974; J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 3; PP. 1444-1446; BIBL. 11 REF.Article

PHOTOLUMINESCENCE FROM MG-IMPLANTED GAAS.PHIL WON YU; PARK YS.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 30; NO 1; PP. 14-16; BIBL. 14 REF.Article

TEMPERATURE DEPENDENCE OF PHOTOLUMINESCENCE FROM MG-IMPLANTED GAAS.PHIL WON YU; PARK YS.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 6; PP. 2434-2441; BIBL. 20 REF.Article

PHOTOLUMINESCENCE IN MN IMPLANTED GAAS. AN EXPLANATION ON THE EQUIV. A 1.40 EV EMISSIONPHIL WON YU; PARK YS.1979; J. APPL. PHYS.; USA; DA. 1979; VOL. 50; NO 2; PP. 1097-1103; BIBL. 38 REF.Article

P-TYPE CONDUCTION IN UNDOPED ZNSEPHIL WON YU; PARK YS.1973; APPL. PHYS. LETTERS; U.S.A.; DA. 1973; VOL. 22; NO 7; PP. 345-346; BIBL. 8 REF.Serial Issue

CHARACTERIZATION OF ION IMPLANTS IN GAAS BY AES AND GDOSPARK YS; THEIS WM; GRANT JT et al.1980; APPL. SURF. SCI.; NLD; DA. 1980; VOL. 4; NO 3-4; PP. 445-455; BIBL. 15 REF.Conference Paper

ELECTRICAL MEASUREMENTS AND OPTICAL ACTIVATION STUDIES IN MG-IMPLANTED GAASYEO YK; PARK YS; WON YU P et al.1979; J. APPL. PHYS.; USA; DA. 1979; VOL. 50; NO 5; PP. 3274-3281; BIBL. 16 REF.Article

ELECTRICAL CHARACTERISTICS OF AL-IMPLANTED ZNSE.SHIN BK; PARK YS; LOOK DC et al.1974; APPL. PHYS. LETTERS; U.S.A.; DA. 1974; VOL. 24; NO 9; PP. 435-436; BIBL. 12 REF.Article

SOME ELECTRICAL PROPERTIES OF AGGAS2.PHIL WON YU; MANTHURUTHIL J; PARK YS et al.1974; J. APPL. PHYS.; U.S.A.; DA. 1974; VOL. 45; NO 8; PP. 3694-3696; BIBL. 9 REF.Article

CORRELATION OF ELECTRICAL CARRIER AND ATOMIC PROFILES OF S IMPLANTS IN GAASYEO YK; PARK YS; KWOR R et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 3; PART.1; PP. 1815-1817; BIBL. 8 REF.Article

THE DETERMINATION OF SULFUR ION IMPLANTATION PROFILES IN GAAS USING AUGER ELECTRON SPECTROSCOPYPARK YS; GRANT JT; HAAS TW et al.1979; J. APPL. PHYS.; USA; DA. 1979; VOL. 50; NO 2; PP. 809-812; BIBL. 8 REF.Article

A TECHNIQUE FOR UNIFORM ETCHING OF POLISHED GALLIUM PHOSPHIDE.DOBBS BC; MIYAZAKI T; PARK YS et al.1978; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1978; VOL. 125; NO 2; PP. 347; BIBL. 4 REF.Article

EFFECT OF HYPOPHYSECTOMY ON P-AMINOHIPPURATE TRANSPORT KINETICS IN RAT RENAL CORTICAL SLICES.MISANKO BS; PARK YS; SOLOMON S et al.1977; J. ENDOCRINOL.; G.B.; DA. 1977; VOL. 74; NO 1; PP. 121-128; BIBL. 14 REF.Article

DISTRIBUTION OF ELECTRICALLY ACTIVE MG IMPLANTS IN GAASBYUNG DOO CHOE; YEO YK; PARK YS et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 9; PP. 4742-4746; BIBL. 6 REF.Article

MODIFICATIONS OF THE AMPHOTERIC ACTIVITY OF GE IMPLANTS IN GAAS BY DUAL IMPLANTATION OF GE AND ASYEO YK; PEDROTTI FL; PARK YS et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 11; PP. 5785-5788; BIBL. 10 REF.Article

INVESTIGATION OF ION-IMPLANTED GAP LAYERS BY ELLIPSOMETRY.DOBBS BC; ANDERSON WJ; PARK YS et al.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 12; PP. 5052-5056; BIBL. 20 REF.Article

  • Page / 3