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THEORY OF SPONTANEOUS EMISSION REDUCTION AT LASING WITH LONG DELAYS IN GAAS JUNCTION LASERSPATEL NB; NUNES FD; VILELA JM et al.1979; SOLID STATE COMMUNIC.; GBR; DA. 1979; VOL. 30; NO 2; PP. 51-54Article

INFLUENCE OF UNIAXIAL PRESSURE ON THE CRITICAL TEMPERATURE FOR LONG DELAYS IN GAAS JUNCTION LASERSMOROSINI MBZ; PATEL NB; NUNES FD et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 5; NO 9; PP. 5052-5054; BIBL. 8 REF.Article

TEMPERATURE AND PRESSURE DEPENDENCES OF ZN-DOPED GAN.PANKOVE JI; PRINCE FC; PATEL NB et al.1978; APPL. PHYS.; GERM.; DA. 1978; VOL. 15; NO 1; PP. 113-114; BIBL. 9 REF.Article

OPTICAL GAIN MEASUREMENTS OF 1.3 MU M IN1-XGAXASYP1-Y AS FUNCTION OF INJECTED CURRENT DENSITYPRINCE FC; MATTOS TJS; PATEL NB et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 24; PP. 1054-1055; BIBL. 12 REF.Article

CALCULATION OF THE THRESHOLD CURRENT OF STRIPE-GEOMETRY DOUBLE HETEROSTRUCTURE GAAS-GA1-X ALXAS LASERS, INCLUDING A SELF-CONSISTENT TREATMENT OF THE CURRENT-TEMPERATURE DEPENDENCEMATTOS TJS; PATEL NB; NUNES FD et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 1; PP. 149-155; BIBL. 19 REF.Article

(INGA) (ASP)/INP EMBEDDED MESA STRIPE LASERSPRINCE FC; PATEL NB; BULL DJ et al.1979; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1979; VOL. 35; NO 8; PP. 577-580; BIBL. 11 REF.Article

THEORY ON LONG TIME DELAYS, Q-SWITCHING AND RELATED PHENOMENA IN GAAS JUNCTION LASERS.NUMES FD; PATEL NB; RIPPER JE et al.1976; ELECTRON. LETTERS; G.B.; DA. 1976; VOL. 12; NO 22; PP. 574-575; BIBL. 15 REF.Article

FILAMENTS IN SEMICONDUCTOR LASERS.RIPPER JE; NUNES FD; PATEL NB et al.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 27; NO 6; PP. 328-330; BIBL. 17 REF.Article

TIME BEHAVIOUR OF THE SPONTANEOUS EMISSION OF JUNCTION LASERS CONTAINING SATURABLE ABSORBING TRAPS.RIPPER JE; SERRA TJB; PATEL NB et al.1975; PHYS. LETTERS, A; NETHERL.; DA. 1975; VOL. 51; NO 1; PP. 23-24; BIBL. 8 REF.Article

BEHAVIOR AND THRESHOLD CURRENT AND POLARIZATION OF STIMULATED EMISSION OF GAAS INJECTION LASERS UNDER UNIAXIAL STRESSPATEL NB; RIPPER JE; BROSSON P et al.1973; I.E.E.E.J. QUANTUM ELECTRON.; U.S.A.; DA. 1973; VOL. 9; NO 2; PP. 338-341; BIBL. 8 REF.Serial Issue

INP-IN1-XGAXASYP1-Y EMBEDDED MESA STRIPE LASERSPRINCE FC; PATEL NB; BULL DJ et al.1980; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1980; VOL. 16; NO 10; PP. 1034-1038; BIBL. 23 REF.Article

REFRACTIVE INDEX DEPENDENCE ON FREE CARRIERS FOR GAASMENDOZA ALVAREZ JG; NUNES FD; PATEL NB et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 8; PP. 4365-4367; BIBL. 14 REF.Article

STUDY OF SOME NEWLY SYNTHESIZED GLUTARIMIDE COMPOUNDS ON SKELETAL MUSCLE.PATEL NB; JINDAL MN; PATEL VK et al.1977; INDIAN J. MED. RES.; INDIA; DA. 1977; VOL. 66; NO 2; PP. 310-316; H.T. 1; BIBL. 13 REF.Article

VARIATION OF SPONTANEOUS EMISSION WITH CURRENT IN GAAS HOMOSTRUCTURE AND DOUBLE-HETEROSTRUCTURE INJECTION LASERSBROSSON P; RIPPER JE; PATEL NB et al.1973; I.E.E.E.J. QUANTUM ELECTRON.; U.S.A.; DA. 1973; VOL. 9; NO 2; PP. 273-280; BIBL. 11 REF.Serial Issue

EFFECT OF UNIAXIAL PRESSURE ON THE THRESHOLD CURRENT OF DOUBLE-HETEROSTRUCTURE GAAS LASERS = EFFET D'UNE P UNIAXE SUR LE COURANT SEUIL DE LASERS GAAS A DOUBLE HETEROSTRUCTURERIPPER JE; PATEL NB; BROSSON P et al.1972; APPL. PHYS. LETTERS; U.S.A.; DA. 1972; VOL. 21; NO 4; PP. 124-125; BIBL. 8 REF.Serial Issue

SPECTRAL HOLE BURNING IN GAAS JUNCTION LASERSPATEL NB; BROSSON P; RIPPER JE et al.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 34; NO 5; PP. 330-331; BIBL. 9 REF.Article

A DOUBLE-BLIND CONTROLLED TRIAL OF PGE2 GEL IN CERVICAL RIPENINGHUTCHON DJR; GEIRSSON R; PATEL NB et al.1979; INTERNATION. J. GYNECOL. OBSTETR.; USA; DA. 1979-1980; VOL. 17; NO 6; PP. 604-607; BIBL. 12 REF.Article

LONG DELAY TIME FOR LASING IN VERY NARROW GRADED BARRIER SINGLE-QUANTUM-WELL LASERSPRINCE FC; PATEL NB; KASEMSET D et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 12; PP. 435-437; BIBL. 10 REF.Article

ON DEPTH PROFILING AN INGAASP-INP HETEROJUNCTIONLANDERS R; PRINCE FC; SUNDARAM VS et al.1983; SURFACE AND INTERFACE ANALYSIS; ISSN 0142-2421; GBR; DA. 1983; VOL. 5; NO 1; PP. 2-3; BIBL. 5 REF.Article

DETERMINATION OF LATTICE MISMATCH IN GA1-XALXAS LPE LAYER ON GAAS SUBSTRATE BY USING A DIVERGENT X-RAY SOURCESHIH LIN CHANG; PATEL NB; NANNICHI Y et al.1979; J. APPL. PHYS.; USA; DA. 1979; VOL. 50; NO 4; PP. 2975-2976; BIBL. 10 REF.Article

REFRACTIVE-INDEX PROFILE AND RESONANT MODES IN GAAS LASERSNUNES FD; PATEL NB; MENDOZA ALVAREZ JG et al.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 6; PP. 3852-3857; BIBL. 11 REF.Article

LOW-THRESHOLD OXIDE STRIPE GAAS/GAALAS LASERS GROWN BY MOCVDHONG CS; KASEMSET D; PATEL NB et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 12; PP. 497-499; BIBL. 11 REF.Article

REDUCTION OF BARBITURATE ANAESTHESIA BY NEW GLUTARIMIDE COMPOUNDS IN MICEPATEL VK; JINDAL MN; PATEL NB et al.1980; PSYCHOPHARMACOLOGY; DEU; DA. 1980; VOL. 71; NO 1; PP. 101-103; BIBL. 10 REF.Article

VERY NARROW GRADED-BARRIER SINGLE QUANTUM WELL LASER GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITIONKASEMSET D; HONG CS; PATEL NB et al.1982; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 10; PP. 912-914; BIBL. 9 REF.Article

THRESHOLD BEHAVIOR OF (GAAL)AS-GAAS LASERS AT LOW TEMPERATURES.HWANG CJ; PATEL NB; SACILOTTI MA et al.1978; J. APPL. PHYS.; U.S.A.; DA. 1978; VOL. 49; NO 1; PP. 29-34; BIBL. 34 REF.Article

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