au.\*:("PAVELESCU, C")
Results 1 to 13 of 13
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Silane oxidation study: analysis of data for SiO2 films deposited by low temperature chemical vapour depositionCOBIANU, C; PAVELESCU, C.Thin solid films. 1984, Vol 117, Num 3, pp 211-216, issn 0040-6090Article
A theoretica study of the low-temperature chemical vapor deposition of SiO2 filmsCOBIANU, C; PAVELESCU, C.Journal of the Electrochemical Society. 1983, Vol 130, Num 9, pp 1888-1893, issn 0013-4651Article
An etch-rate study of thermally annealed LTCVD SiO2 films as a function of initial deposition conditionsCOBIANU, C; PAVELESCU, C.Journal of materials science letters. 1984, Vol 3, Num 11, pp 979-982, issn 0261-8028Article
Etch rate behaviour of phosphosilicate glass films chemically vapour deposited in teh SiH4-PH3-O2-N2PAVELESCU, C; COBIANU, C.Thin solid films. 1991, Vol 196, Num 2, pp 351-360, issn 0040-6090Article
D.c. dielectric breakdown in phosphosilicate glass films prepared by low temperature chemical vapour depositionSERGHI, D; PAVELESCU, C.Thin solid films. 1990, Vol 186, Num 1, pp L25-L28, issn 0040-6090Article
Dielectric constant and dissipation factor in LTCVD SiO2 filmsCOBIANU, C; PAVELESCU, C; CATUNEANU, V. M et al.Journal of materials science letters. 1987, Vol 6, Num 1, pp 23-24, issn 0261-8028Article
Etch rate of low-temperature chemically vapour deposited SiO2 films in P-etch solution: the effect of deposition conditionsPAVELESCU, C; COBIANU, C; SEGAL, E et al.Journal of materials science letters. 1985, Vol 4, Num 10, pp 1280-1281, issn 0261-8028Article
The effect of deposition conditions on the refractive index of LTCVD SiO2 filmsCOBIANU, C; PAVELESCU, C; PAUNESCU, A et al.Journal of materials science letters. 1985, Vol 4, Num 11, pp 1419-1420, issn 0261-8028Article
An infrared absorption study of LTCVD silicon dioxidePAVELESCU, C; COBIANU, C; VANCU, A et al.Journal of the Electrochemical Society. 1983, Vol 130, Num 4, pp 975-977, issn 0013-4651Article
The infrared absorption of antimony-doped SiO2 films chemically vapour deposited in the TEOS-SbCl5-O2 system at low temperatureVLAHOVICI, N; PAVELESCU, C; KLEPS, I et al.Journal of materials science letters. 1991, Vol 10, Num 15, pp 920-921, issn 0261-8028Article
On the role of carrier gas in the deposition kinetics of SiO2 films produced by low temperature chemical vapour depositionCOBIANU, C; PAVELESCU, C; SEGAL, E et al.Thin solid films. 1987, Vol 146, Num 2, pp 183-189, issn 0040-6090Article
Dry etching of low-temperature chemically vapour deposited phosphosilicate glass films in CF4-Q2 plasmaBANTOIU, R; PAVELESCU, C; AVRAMESCU, V et al.Journal of materials science letters. 1991, Vol 10, Num 12, pp 703-705, issn 0261-8028Article
An analysis of the initial oxidation regions of silicon in dry oxygen at atmospheric pressurePAVELESCU, C; BADILA, M; COBIANU, C et al.Journal of materials science letters. 1988, Vol 7, Num 10, pp 1110-1111, issn 0261-8028Article
