Random porous silicon multilayers : application to distributed Bragg reflectors and interferential Fabry-Pérot filtersPAVESI, L; DUBOS, P.Semiconductor science and technology. 1997, Vol 12, Num 5, pp 570-575, issn 0268-1242Article

Periodic and purposely disordered superlattices : the effect of continuous and discrete disorder distributionPAVESI, L; REINHART, F. K.Physical review. B, Condensed matter. 1990, Vol 42, Num 17, pp 11362-11365, issn 0163-1829, 4 p.Article

ACUTE NON-LYMPHOBLASTIC LEUKEMIAROBUSTELLI DELLA CUNA G; CUZZONI Q; PAVESI L et al.1978; EUROP. J. CANCER; GBR; DA. 1978; VOL. 14; NO 10; PP. 1157-1158; BIBL. 14 REF.Article

CONTRIBUTO SPERIMENTALE ALLO STUDIO DELL' EFFETTO ANTICELLULARE DEL DIFENILMERCURIO. = CONTRIBUTION EXPERIMENTALE A L'ETUDE DE L'EFFET ANTICELLULAIRE DU DIPHENYLMERCURESINIBALDI V; POGGI G; PAVESI L et al.1975; LAV. UM.; ITAL.; DA. 1975; VOL. 27; NO 5; PP. 139-147; H.T. 1; ABS. ANGL.; BIBL. 21 REF.Article

Porous silicon : a route towards a Si-based photonics ?PAVESI, L.Microelectronics journal. 1996, Vol 27, Num 4-5, pp 437-448, issn 0959-8324Article

Stretched-exponential decay of the luminescence in porous siliconPAVESI, L; CESCHINI, M.Physical review. B, Condensed matter. 1993, Vol 48, Num 23, pp 17625-17628, issn 0163-1829Article

Atomic and molecular hydrogen in gallium arsenide : a theoretical studyPAVESI, L; GIANNOZZI, P.Physical review. B, Condensed matter. 1992, Vol 46, Num 8, pp 4621-4629, issn 0163-1829Article

Disorder-induced localization in superlatticesTUNCEL, E; PAVESI, L.Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties. 1992, Vol 65, Num 2, pp 213-229, issn 0958-6644Conference Paper

ANTIINFLAMMATORY ACTIVITY AND BIOAVAILABILITY OF PERCUTANEOUS PIROXICAMSCHIANTARELLI P; CADEL S; ACERBI D et al.1982; ARZNEIM.-FORSCH.; ISSN 0004-4172; DEU; DA. 1982; VOL. 32; NO 3; PP. 230-235; ABS. GER; BIBL. 20 REF.Article

Elaboration, characterization and aging effects of porous silicon microcavities formed on lightly p-type doped substratesMULLONI, V; MAZZOLENI, C; PAVESI, L et al.Semiconductor science and technology. 1999, Vol 14, Num 12, pp 1052-1059, issn 0268-1242Article

Porous silicon resonant cavity light emitting diodesPAVESI, L; GUARDINI, R; MAZZOLENI, C et al.Solid state communications. 1996, Vol 97, Num 12, pp 1051-1053, issn 0038-1098Article

A comparison of Si-doped (100), (111)A, (111)B and (311)B Al_xGa_1-xAs samples grown by molecular beam epitaxyPAVESI, L; HENINI, M; JOHNSTON, D et al.Semiconductor science and technology. 1995, Vol 10, Num 1, pp 49-55, issn 0268-1242Article

Exciton-carrier scattering in gallium selenideCAPOZZI, V; PAVESI, L; STAEHLI, J. L et al.Physical review. B, Condensed matter. 1993, Vol 47, Num 11, pp 6340-6349, issn 0163-1829Article

Radiation effects on porous siliconPIVAC, B; RAKVIN, B; PAVESI, L et al.Journal of luminescence. 1993, Vol 57, Num 1-6, pp 227-229, issn 0022-2313Article

Red-shift of the excitonic level in two beam absorption spectra of GaSePAVESI, L; CAPOZZI, V; STAEHLI, J. L et al.Physica scripta (Print). 1988, Vol 38, Num 4, pp 627-631, issn 0031-8949Conference Paper

Porous silicon : a quantum sponge structure for silicon based optoelectronicsBISI, O; OSSICINI, S; PAVESI, L et al.Surface science reports. 2000, Vol 38, Num 1-3, pp 1-126, issn 0167-5729Article

Magnetic field effects on non-periodic superlattice structuresCRUZ, H; PIAZZA, F; PAVESI, L et al.Semiconductor science and technology. 1993, Vol 8, Num 2, pp 254-262, issn 0268-1242Article

Effect of As overpressure on Si-doped (111)A GaAs grown by molecular beam epitaxy : a photoluminescence studyPIAZZA, F; PAVESI, L; HENINI, M et al.Semiconductor science and technology. 1992, Vol 7, Num 12, pp 1504-1507, issn 0268-1242Article

Nuclear magnetic resonance relaxation of polyacrylamide gels around the collapse transitionTABAK, F; CORTI, M; PAVESI, L et al.Journal of physics. C. Solid state physics. 1987, Vol 20, Num 34, pp 5691-5701, issn 0022-3719Article

Force modulation microscopy of multilayered porous silicon samplesSBRANA, F; GHULINYAN, M; PAVESI, L et al.Physica status solidi. A. Applied research. 2005, Vol 202, Num 8, pp 1492-1496, issn 0031-8965, 5 p.Conference Paper

Effect of As overpressure on Si-doped (111)A, (211)A and (311)A GaAs grown by molecular beam epitaxyJOHNSTON, D; PAVESI, L; HENINI, M et al.Microelectronics journal. 1995, Vol 26, Num 8, pp 759-765, issn 0959-8324Conference Paper

Characterization of porous silicon inhomegeneities by high spatial resolution infrared spectroscopyBORGHESI, A; SASSELLA, A; PIVAC, B et al.Solid state communications. 1993, Vol 87, Num 1, pp 1-4, issn 0038-1098Article

High-precision determination of the temperature dependence of the fundamental energy gap in gallium arsenideGRILLI, E; GUZZI, M; ZAMBONI, R et al.Physical review. B, Condensed matter. 1992, Vol 45, Num 4, pp 1638-1644, issn 0163-1829Article

Amphoteric behavior of H^O in GaAsPAVESI, L; GIANNOZZI, P; REINHART, F. K et al.Physical review. B, Condensed matter. 1990, Vol 42, Num 3, pp 1864-1867, issn 0163-1829, 4 p.Article

Electroluminescence in MOS structures with Si/SiO₂ nanometric multilayersGABURRO, Z; PUCKER, G; BELLUTTI, P et al.Solid state communications. 2000, Vol 114, Num 1, pp 33-37, issn 0038-1098Article