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au.\*:("PEAKER AR")

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LIGHT-EMITTING DIODESPEAKER AR.1980; I.E.E. PROC., PART A; ISSN 0143-702X; GBR; DA. 1980; VOL. 127; NO 3; PP. 202-210; BIBL. 19 REF.Article

TEMPERATURE DEPENDENCE OF PEAK HEIGHTS IN DEEP-LEVEL TRANSIENT SPECTROSCOPYROCKETT PI; PEAKER AR.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 22; PP. 838-839; BIBL. 3 REF.Article

PRESENT LIMITATIONS AND ULTIMATE PERFORMANCE OF LIGHT EMITTING DIODES.HAMILTON B; PEAKER AR.1974; IN: ELECTRO-OPT. INT. '74 CONF. PROC. TECH. PROGR.; BRIGHTON, ENGL.; 1974; SURBITON, SURREY; KIVER COMMUN.; DA. 1974; PP. 153-160; BIBL. 7 REF.Conference Paper

LIGHT EMITTING DIODES, CAN THEY BE EFFICIENT.PEAKER AR; HAMILTON B.1976; MICROELECTRONICS; G.B.; DA. 1976; VOL. 7; NO 3; PP. 5-11; BIBL. 5 REF.Article

THE GROWTH OF GALLIUM PHOSPHIDE LAYERS OF HIGH SURFACE QUALITY BY LIQUID PHASE EPITAXY. A COMMERCIAL PROCESS FOR GREEN LICHT EMITTING DIODES.MOTTRAM A; PEAKER AR.1974; J. CRYST. GROWTH; NETHERL.; DA. 1974; VOL. 27; PP. 193-204; BIBL. 31 REF.Article

NITROGEN DOPING PROFILES IN GALLIUM PHOSPHIDE GROWN BY LIQUID PHASE EPITAXYHAYES TJ; MOTTRAM A; PEAKER AR et al.1979; J. CRYST. GROWTH; NLD; DA. 1979; VOL. 46; NO 1; PP. 59-68; BIBL. 15 REF.Article

A HIGH SENSIVITY BRIDGE FOR THE MEASUREMENT OF DEEP STATES IN SEMICONDUCTORSMISRACHI S; PEAKER AR; HAMILTON B et al.1980; J. PHYS. E; ISSN 0022-3735; DNK; DA. 1980; VOL. 13; NO 10; PP. 1055-1061; BIBL. 17 REF.Article

HOLE TRAPS IN N-TYPE GA1-XALXAS GROWN BY ORGANO-METALLIC VAPOUR PHASE EPITAXYWU RH; ALLSOPP D; PEAKER AR et al.1982; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 2; PP. 75-77; BIBL. 3 REF.Article

DEEP-STATE-CONTROLLED MINORITY-CARRIER LIFETIME IN N-TYPE GALLIUM PHOSPHIDEHAMILTON B; PEAKER AR; WIGHT DR et al.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 10; PP. 6373-6385; BIBL. 31 REF.Article

DEEP STATES IN TRANSITION METAL DIFFUSED GALLIUM PHOSPHIDEBRUNWIN RF; HAMILTON B; HODGKINSON J et al.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 3; PP. 249-256; BIBL. 31 REF.Article

RECOMBINAISON IN GALLIUM PHOSPHIDE VIA A DEEP STATE ASSOCIATED WITH NICKELPEAKER AR; BRUNWIN RF; JORDAN P et al.1979; ELECTRON. LETTERS; GBR; DA. 1979; VOL. 15; NO 20; PP. 663-664; BIBL. 5 REF.Article

DETECTION OF MINORITY-CARRIER TRAPS USING TRANSIENT SPECTROSCOPYBRUNWIN R; HAMILTON B; JORDAN P et al.1979; ELECTRON. LETTERS; GBR; DA. 1979; VOL. 15; NO 12; PP. 349-350; BIBL. 5 REF.Article

DEEP-LEVEL CONTROLLED LIFETIME AND LUMINESCENCE EFFICIENCY IN GAP.HAMILTON B; PEAKER AR; BRAMWELL S et al.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 26; NO 12; PP. 702-704; BIBL. 8 REF.Article

NICKEL, A PERSISTENT INADVERTENT CONTAMINANT IN DEVICE-GRADE VAPOUR EPITAXIALLY GROWN GALLIUM PHOSPHIDE.DEAN PJ; WHITE AM; HAMILTON B et al.1977; J. PHYS. D; G.B.; DA. 1977; VOL. 10; NO 18; PP. 2545-2554; BIBL. 17 REF.Article

A DEEP CENTER ASSOCIATED WITH THE PRESENCE OF NITROGEN IN GAP.SMITH BL; HAYES TJ; PEAKER AR et al.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 26; NO 3; PP. 122-124; BIBL. 13 REF.Article

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