The influence of some species formed during the discharge and gamma and UV radiation on breakdown voltage and time delay in nitrogen and neon at low pressurePEJOVIC, Momcilo M; PEJOVIC, Milic M.Plasma sources science & technology (Print). 2005, Vol 14, Num 3, pp 492-500, issn 0963-0252, 9 p.Article

Analysis of mechanisms which lead to electrical breakdown in a krypton-filled tube using the time delay methodPEJOVIC, Momcilo M; RISTIC, Goran S.Journal of physics. D, Applied physics (Print). 2000, Vol 33, Num 21, pp 2786-2790, issn 0022-3727Article

Electrical breakdown in low pressure gasesPEJOVIC, Momcilo M; RISTIC, Goran S; KARAMARKOVIC, Jugoslav P et al.Journal of physics. D, Applied physics (Print). 2002, Vol 35, Num 10, pp R91-R103, issn 0022-3727Article

Defect behaviors in n-channel power VDMOSFETs during HEFS and thermal post-HEFS annealingRISTIC, Goran S; PEJOVIC, Momcilo M; JAKSIC, Aleksandar B et al.Applied surface science. 2006, Vol 252, Num 8, pp 3023-3032, issn 0169-4332, 10 p.Article

The estimation of static breakdown voltage for gas-filled tubes at low pressures using dynamic methodPEJOVIC, Momcilo M; MILOSAVLJEVIC, Cedomir S; PEJOVIC, Milic M et al.IEEE transactions on plasma science. 2003, Vol 31, Num 4, pp 776-781, issn 0093-3813, 6 p., 2Article

Comparison between post-irradiation annealing and post-high electric field stress annealing of n-channel power VDMOSFETsRISTIC, Goran S; PEJOVIC, Momcilo M; JAKSIC, Aleksandar B et al.Applied surface science. 2003, Vol 220, Num 1-4, pp 181-185, issn 0169-4332, 5 p.Article

Physico-chemical processes in metal-oxide-semiconductor transistors with thick gate oxide during high electric field stressRISTIC, Goran S; PEJOVIC, Momcilo M; JAKSIC, Aleksandar B et al.Journal of non-crystalline solids. 2007, Vol 353, Num 2, pp 170-179, issn 0022-3093, 10 p.Article

The application of convolution-based statistical model on the electrical breakdown time delay distributions in neon under γ and UV radiationMALUCKOV, Cedomir A; KARAMARKOVIC, Jugoslav P; RADOVIC, Miodrag K et al.IEEE transactions on plasma science. 2006, Vol 34, Num 1, pp 2-6, issn 0093-3813, 5 p.Article

Influence of tube wall material type and tube temperature on the recombination processes of nitrogen ions and atoms in afterglowPEJOVIC, Momcilo M; RISTIC, Goran S; MILOSAVLJEVIC, Cedomir S et al.Journal of physics. D, Applied physics (Print). 2002, Vol 35, Num 20, pp 2536-2542, issn 0022-3727, 7 p.Article

The influence of additional electrons on memory effect in nitrogen at low pressuresNESIC, Nikola T; PEJOVIC, Momcilo M; PEJOVIC, Milic M et al.Journal of physics. D, Applied physics (Print). 2011, Vol 44, Num 9, issn 0022-3727, 095203.1-095203.9Article

The statistical time-delay and the breakdown formative time contributions to the memory effect in Ne at 7 mbar pressureSPASIC, Ivana V; RADOVIC, Miodrag K; PEJOVIC, Momcilo M et al.Journal of physics. D, Applied physics (Print). 2003, Vol 36, Num 20, pp 2515-2520, issn 0022-3727, 6 p.Article