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LA REVISIONE DEL CONCORDATO (1965-1972). IPELOSI C.HUMANITAS. 1974, Vol 29, Num 12, pp 894-918Article

LA REVISIONE DEL CONCORDATO (1965-1972). IIPELOSI C.HUMANITAS. 1975, Vol 30, Num 1, pp 24-42Article

DETERMINATION OF GALLIUM BY ATOMIC ABSORPTION SPECTROMETRY WITH A GRAPHITE FURNACE ATOMIZERPELOSI C; ATTOLINI G.1976; ANAL. CHIM. ACTA; PAYS-BAS; DA. 1976; VOL. 84; NO 1; PP. 179-183; BIBL. 16 REF.Article

DETERMINATION OF TRACE AMOUNTS OF GERMANIUM IN CDSPELOSI C; ATTOLINI G.1979; MIKROCHIM. ACTA; AUT; DA. 1979; VOL. 1; NO 3-4; PP. 199-205; ABS. GER; BIBL. 10 REF.Article

VAPOUR PHASE CHEMICAL TRANSPORT PROPERTIES OF THE CADMIUM TELLURIDE-IODINE SYSTEM.PAORICI C; PELOSI C.1977; REV. PHYS. APPL.; FR.; DA. 1977; VOL. 12; NO 2; PP. 155-159; ABS. FR.; BIBL. 12 REF.; (COLLOQ. INT. TELLURURE CADMIUM. PROPR. PHYS. APPL. 2; STRASBOURG; 1976)Article

KINETICS OF VAPOUR GROWTH IN THE SYSTEM CDS: I2.PAORICI C; PELOSI C.1976; J. CRYST. GROWTH; NETHERL.; DA. 1976; VOL. 35; NO 1; PP. 65-72; BIBL. 29 REF.Article

IODINE DETECTION IN IODINE-DOPED CDS SINGLE CRYSTALS.PAORICI C; PELOSI C; ATTOLINI G et al.1977; J. CRYST. GROWTH; NETHERL.; DA. 1977; VOL. 37; NO 1; PP. 9-12; BIBL. 16 REF.Article

COULO-BIPOTENTIOMETRIC TITRATION IN THE ANALYSIS OF BROMINE IN BROMINE-DOPED CADMIUM CHALCOGENIDESPAORICI C; PELOSI C; ATTOLINI G et al.1975; J. ELECTROANAL. CHEM. INTERFACIAL ELECTROCHEM.; NETHERL.; DA. 1975; VOL. 61; NO 2; PP. 213-217; BIBL. 9 REF.Article

EQUILIBRIUM CALCULATIONS FOR VPE-INGAASPFRANCHI S; PELOSI C; ATTOLINI G et al.1981; REV. PHYS. APPL.; ISSN 0035-1687; FRA; DA. 1981; VOL. 16; NO 1; PP. 1-4; ABS. ENG; BIBL. 26 REF.Article

SOME PROPERTIES OF CDS/P-GE HETEROJUNCTIONS GROWN BY CHEMICAL TRANSPORT.GHEZZI C; PAORICI C; PELOSI C et al.1976; APPL. PHYS.; GERM.; DA. 1976; VOL. 11; NO 4; PP. 327-335; BIBL. 26 REF.Article

COULO-BIPOTENTIOMETRIC TITRATIONS IN THE ANALYSIS OF CHLORINE IN CHLORINE-DOPED CADMIUM CHALCOGENIDESPELOSI C; PAORICI C; ATTOLINI G et al.1974; J. ELECTROANAL. CHEM. INTERFACIAL ELECTROCHEM.; NETHERL.; DA. 1974; VOL. 57; NO 2; PP. 259-264; BIBL. 16 REF.Article

ELECTROLUMINESCENCE IN CDIN2S4.PAORICI C; PELOSI C; ROMEO N et al.1976; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1976; VOL. 36; NO 1; PP. K33-K36; BIBL. 9 REF.Article

EPITAXIAL GROWTH OF CADMIUM SULPHIDE ON (111) GERMANIUM SUBSTRATES.PAORICI C; PELOSI C; BOLZONI G et al.1975; J. MATER. SCI.; G.B.; DA. 1975; VOL. 10; NO 12; PP. 2117-2123; BIBL. 30 REF.Article

Crystal growth, thermodynamical and structural study of CoGa2O4 and ZnCr2O4 single crystalsLECCABUE, F; PELOSI, C.Journal of crystal growth. 1986, Vol 79, Num 1-3, pp 410-416, issn 0022-0248, 1-2Conference Paper

GROWTH AND DEFECT STRUCTURE OF CDS EPITAXIAL LAYERS ON (111) GE SUBSTRATES.GHEZZI C; PAORICI C; PELOSI C et al.1977; J. CRYST. GROWTH; NETHERL.; DA. 1977; VOL. 41; NO 2; PP. 181-191; BIBL. 15 REF.Article

CHEMICAL-TRANSPORT PROPERTIES OF THE: CD:TE:CL:N SYSTEMPAORICI C; ATTOLINI G; PELOSI C et al.1973; J. CRYST. GROWTH; NETHERL.; DA. 1973; VOL. 18; NO 3; PP. 289-293; BIBL. 24 REF.Serial Issue

InGaAs/InP Schottky barrier diode = Diode InGaAs/InP à barrière SchottkyHERNANDEZ, L; PELOSI, C.Physica status solidi. A. Applied research. 1989, Vol 113, Num 2, pp 677-684, issn 0031-8965Article

CLOSED-TUBE CHEMICAL-TRANSPORT MECHANISMS IN THE CE:TE:H:CL:N SYSTEM.PAORICI C; PELOSI C; ATTOLINI G et al.1975; J. CRYST. GROWTH; NETHERL.; DA. 1975; VOL. 28; NO 3; PP. 348-364; BIBL. 17 REF.Article

On the role of order-disorder phenomena in chalcopyrite compoundsPELOSI, C; DE MELO, O; ORI, O et al.Materials letters (General ed.). 1989, Vol 8, Num 1-2, pp 17-20, issn 0167-577XArticle

Nanoindentation studies of (111) GaAs/InP epilayersNAVAMATHAVAN, R; ARIVUOLI, D; ATTOLINI, G et al.Applied surface science. 2001, Vol 180, Num 1-2, pp 119-125, issn 0169-4332Article

Taxonomic evaluations of the genus Pinus (Pinaceae) based on electrophoretic data of salt soluble and insoluble seed storage proteinsPIOVESAN, G; PELOSI, C; SCHIRONE, A et al.Plant systematics and evolution. 1993, Vol 186, Num 1-2, pp 57-68, issn 0378-2697Article

The application of the bragg-Williams model to the description of fundamental thermodynamical properties of binary semiconducting compoundsDE MELO, O; ORI, O; PELOSI, C et al.Journal of crystal growth. 1990, Vol 102, Num 1-2, pp 141-146, issn 0022-0248, 6 p.Article

The CVD growth of CuAlTe2 single crystalsGOMBIA, E; LECCABUE, F; PELOSI, C et al.Materials letters (General ed.). 1984, Vol 2, Num 5, pp 429-431, issn 0167-577XArticle

Searching for a more sensitive earthworm species to be used in pesticide homologation tests ― A meta-analysisPELOSI, C; JOIMEL, S; MAKOWSKI, D et al.Chemosphere (Oxford). 2013, Vol 90, Num 3, pp 895-900, issn 0045-6535, 6 p.Article

Lattice strain relaxation in GaAs/InP(001) and GaAs/GaP(001) heterostructuresFRANCESIO, L; FRANZOSI, P; ATTOLINI, G et al.Solid state communications. 1996, Vol 97, Num 9, pp 781-783, issn 0038-1098Article

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