OHMIC CONTACTS TO III-V COMPOUND SEMICONDUCTORS: A REVIEW OF FABRICATION TECHNIQUESPIOTROWSKA A; GUIVARC'H A; PELOUS G et al.1983; SOLID-STATE ELECTRONICS; ISSN 0038-1101; GBR; DA. 1983; VOL. 26; NO 3; PP. 179-197; 18 P.; BIBL. 170 REF.Article

SELENIUM IMPLANTATION INTO SILICON STUDIED BY DLTS TECHNIQUE.RICHOU F; PELOUS G; LECROSNIER D et al.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 31; NO 8; PP. 525-527; BIBL. 8 REF.Article

THERMAL GENERATION OF CARRIERS IN GOLD-DOPED SILICONRICHOU F; PELOUS G; LECROSNIER D et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 12; PP. 6252-6257; BIBL. 29 REF.Article

GOLD GETTERING IN SILICON BY PHOSPHOROUS DIFFUSION AND ARGON IMPLANTATION: MECHANISMS AND LIMITATIONSLECROSNIER D; PAUGAM J; PELOUS G et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 8; PP. 5090-5097; BIBL. 38 REF.Article

PROTECTION DE L'ARSENIURE DE GALLIUM PORTE A HAUTE TEMPERATURE, PAR DEPOT PULVERISE DE SI₃N₄ OU ALN.HENRY L; LAMY P; GUIVARC'H A et al.1976; VIDE; FR.; DA. 1976; NO 183; PP. 101-106; ABS. ANGL.; BIBL. 12 REF.Article

ON THE FORMATION OF BINARY COMPOUNDS IN AU/INP SYSTEM = SUR LA FORMATION DE COMPOSES BINAIRES DANS LE SYSTEME AU/INPPIOTROWSKA A; AUVRAY P; GUIVARC'H A et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 8; PP. 5112-5117; BIBL. 10 REF.Article

OPTIMIZATION OF AVALANCHE SILICON PHOTODIODES: A NEW STRUCTURE.LECROSNIER D; PELOUS G; AMOUROUX C et al.1975; IN: INT. ELECTRON DEVICES MEET.; WASHINGTON, D.C.; 1975; NEW YORK; INST. ELECTR. ELECTRON. ENG.; DA. 1975; PP. 595-597Conference Paper

INFLUENCE OF PHOSPHORUS-INDUCED POINT DEFECTS ON A GOLD-GETTERING MECHANISM IN SILICONLECROSNIER D; PAUGAM J; RICHOU F et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 2; PP. 1036-1038; BIBL. 13 REF.Article

LONG-RANGE ENHANCEMENT OF BORON DIFFUSIVITY INDUCED BY A HIGH-SURFACE-CONCENTRATION PHOSPHORUS DIFFUSIONLECROSNIER D; GAUNEAU M; PAUGAM J et al.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 34; NO 3; PP. 224-226; BIBL. 15 REF.Article

GROWTH OF PLATINUM SILICIDE UNDER PROTECTIVE LAYERS.JOUBERT P; AUVRAY P; GUIVARC'H A et al.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 31; NO 11; PP. 753-755; BIBL. 17 REF.Article

DIFFUSION DU PHOSPHORE ET DU BORE DANS LE SILICIUM A PARTIR DE COUCHES ENTERREES OBTENUES PAR IMPLANTATION.LECROSNIER D; EVRARD D; FLOCH J et al.1974; VIDE; FR.; DA. 1974; NO 171 SUPPL.; PP. 133-140; BIBL. 8 REF.; (APPL. PROCESSUS ELECTRON. IONIQUES. IVE. CONGR. INT. AVISEM 74; TOULOUSE; 1974)Conference Paper

REACTION KINETICS OF MOLYBDENUM THIN FILMS ON SILICON(111) SURFACE.GUIVARC'H A; AUVRAY P; BERTHOU L et al.1978; J. APPL. PHYS.; U.S.A.; DA. 1978; VOL. 49; NO 1; PP. 233-237; BIBL. 15 REF.Article

Minority-carrier lifetime of the pressure induced Γ-Xcrossover in GaAsLEROUX, M; PELOUS, G; RAYMOND, F et al.Applied physics letters. 1985, Vol 46, Num 3, pp 288-290, issn 0003-6951Article

EPITAXIAL REGROWTH OF (100) INP LAYERS AMORPHIZED BY ION IMPLANTATION AT ROOM TEMPERATUREAUVRAY P; GUIVARC'H A; L'HARIDON H et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 9; PP. 6202-6207; BIBL. 18 REF.Article

METALLURGICAL AND ELECTRICAL PROPERTIES OF CHROMIUM SILICON INTERFACESMARTINEZ A; ESTEVE D; GUIVARC'H A et al.1980; SOLID. STATE ELECTRON.; GBR; DA. 1980; VOL. 23; NO 1; PP. 55-64; BIBL. 21 REF.Article

N-CHANNEL MISFETS ON SEMI-INSULATING INP FOR LOGIC APPLICATIONSHENRY L; LECROSNIER D; L'HARIDON H et al.1982; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 2; PP. 102-103; BIBL. 5 REF.Article

Properties of vanadium in InPLAMBERT, B; DEVEAUD, B; TOUDIC, Y et al.Solid state communications. 1983, Vol 47, Num 5, pp 337-340, issn 0038-1098Article

Mixage ionique sur des structures Au/InP = Ion mixing on Au/InP structuresL'HARIDON, H; CHAPLAIN, R; GAUNEAU, M et al.Thin solid films. 1985, Vol 123, Num 2, pp 145-157, issn 0040-6090Article