au.\*:("PENTIA E")
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A SUPRA PROPRIETATILAR ELECTRICE ALE UNAR STRUCTURI CU ELECTROZI DIFERIT DOPATI CU CRISTALE LICHIDE NEMATICE = QUELQUES PROPRIETES ELECTRIQUES DES CELLULES A CRISTAUX LIQUIDES NEMATIQUES COMPORTANT DIFFERENTES ELECTRODES DOPEES)CUCULESCU I; BENA R; ENACHE A et al.1980; BUL. INST. POLITEH. "GHEORGHE GHEORGHIU-DEJ" BUCURESTI, CHIM. METALURG.; ROM; DA. 1980; VOL. 42; NO 1; PP. 11-19; ABS. ENG; BIBL. 10 REF.Article
ELECTRICAL AND OPTICAL PROPERTIES OF SNO2 THIN FILMS OBTAINED BY A VAPOUR REACTION TECHNIQUE.HONCIUC M; CUCULESCU I; MOTOC C et al.1977; BUL. INST. POLITEH. "GHEORGHE GHEORGHIU-DEJ" BUCURESTI, ELECTROTEH.; ROMAN.; DA. 1977; VOL. 39; NO 2; PP. 27-31; ABS. ROUM.; BIBL. 9 REF.Article
The influence of Cu doping on opto-electronic properties of chemically deposited CdSPETRE, D; PINTILIE, I; PENTIA, E et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1999, Vol 58, Num 3, pp 238-243, issn 0921-5107Article
Combined chemical-physical methods for enhancing IR photoconductive properties of PbS thin filmsPENTIA, E; PINTILIE, L; MATEI, I et al.Infrared physics & technology. 2003, Vol 44, Num 3, pp 207-211, issn 1350-4495, 5 p.Article
Interface charge modulation in lead sulphide-ferroelectric ceramic heterostructuresPINTILIE, I; PINTILIE, L; PENTIA, E et al.Infrared physics & technology. 1996, Vol 37, Num 6, pp 659-665, issn 1350-4495Article
Visible photoluminescence in porous silicon prepared in different conditions : Temperature dependence and decayCIUREA, M. L; PENTIA, E; MANEA, A et al.Physica status solidi. B. Basic research. 1996, Vol 195, Num 2, pp 637-645, issn 0370-1972Article
Influence of Sb3+ ions on photoconductive properties of chemically deposited PbS filmsPENTIA, E; PINTILIE, L; TIVARUS, C et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2001, Vol 80, Num 1-3, pp 23-26, issn 0921-5107Conference Paper
Electrical behaviour of fresh and stored porous silicon filmsCIUREA, M. L; BALTOG, I; LAZAR, M et al.Thin solid films. 1998, Vol 325, Num 1-2, pp 271-277, issn 0040-6090Article
Structural, electrical, and photoelectrical properties of CdxPb1-xS thin films prepared by chemical bath depositionPENTIA, E; DRAGHICI, V; SARAU, G et al.Journal of the Electrochemical Society. 2004, Vol 151, Num 11, pp G729-G733, issn 0013-4651Article
Bi influence on growth and physical properties of chemical deposited PbS filmsPENTIA, E; PINTILIE, L; BOTILA, T et al.Thin solid films. 2003, Vol 434, Num 1-2, pp 162-170, issn 0040-6090, 9 p.Article
The effect of Pt and Pd surface doping on the response of nanocrystalline tin dioxide gas sensors to COSCHWEIZER-BERBERICH, M; ZHENG, J. G; WEIMAR, U et al.Sensors and actuators. B, Chemical. 1996, Vol 31, Num 1-2, pp 71-75, issn 0925-4005Conference Paper