INVESTIGATION OF DEFECTS AND STRIATIONS IN AS-GROWN SI CRYSTALS BY SEM USING SCHOTTKY DIODES.DE ROCK AJR; FERRIS SD; KIMERLING LC et al.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 27; NO 6; PP. 313-315; BIBL. 12 REF.Article

ELABORATION DE CREUSETS SIC/GRAPHITE. TIRAGE ET CARACTERISATION DES LINGOTS DE SILICIUM.ELSTON J; VERDONE M; SPITZ JP et al.1975; DGRST-7371354; FR.; DA. 1975; PP. (15P.); H.T. 38; BIBL. 4 REF.; (RAPP. FINAL ACTION CONCERTEE: COMPOSANTS CIRCUITS MICROMINIATURISES)Report

QUALITATIVE ANALYSIS OF THE KOSSEL BACK REFLECTION PATTERN FROM SELECTED SEMICONDUCTORS.FITZPATRICK RL.1974; ADV. X-RAY ANAL.; U.S.A.; DA. 1974; VOL. 17; PP. 467-478; BIBL. 13 REF.; (22ND ANNU. CONF. APPL. X-RAY ANAL. PROC.; DENVER; 1973)Conference Paper

THE GROWTH AND PERFECTION OF PHENANTHRENE SINGLE CRYSTALS. I. PURIFICATION AND SINGLE CRYSTAL GROWTH.MCARDLE BJ; SHERWOOD JN; DAMASK AC et al.1974; J. CRYST. GROWTH; NETHERL.; DA. 1974; VOL. 22; NO 3; PP. 193-200; BIBL. 26 REF.Article

TOPOGRAPHIC OBSERVATION OF MICRO DEFECTS (E.G. "SWIRLS") IN NEARLY PERFECT CRYSTALS.RENNINGER M.1976; J. APPL. CRYSTALLOGR.; DENM.; DA. 1976; VOL. 9; NO 2; PP. 178-180; BIBL. 4 REF.Article

DETERMINATION OF ANGLES BETWEEN BLOCKS FROM THE TOPOGRAPHS OBTAINED BY THE SCHULZ METHOD.ARISTOV VV; SHUKALOV EV.1975; J. APPL. CRYSTALLOGR.; DENM.; DA. 1975; VOL. 8; NO 4; PP. 445-451; BIBL. 8 REF.Article

STRUCTURAL DIFFUSION, INTERFACE STRUCTURE AND CRYSTAL GROWTH.FLETCHER NH.1975; J. CRYST. GROWTH; NETHERL.; DA. 1975; VOL. 28; NO 3; PP. 375-384; BIBL. 18 REF.Article

THE PERFECTION OF GARNET BUBBLE MATERIALS.PISTORIUS JA; ROBERTSON JM; STACY WT et al.1975; PHILIPS TECH. REV.; NETHERL.; DA. 1975; VOL. 35; NO 1; PP. 1-10; BIBL. 29 REF.Article

LIMITES D'ABSORPTION FONDAMENTALE FLOUES COMME CARACTERISTIQUE DE LA STRUCTURE DES COUCHESMATVEEVA LA; TKHORIK YU A.1974; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1974; NO 16; PP. 39-41; BIBL. 10 REF.Article

GROS CRISTAUX DE CORINDON DE QUALITE OPTIQUE ELEVEEMUSATOV MI; BELEVTSEVA LI.1976; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1976; VOL. 12; NO 2; PP. 358-359; H.T. 1; BIBL. 10 REF.Article

GROWTH OF NIOBIUM SINGLE CRYSTALS BY PULLING FROM A MELT ON A PEDESTAL. II. GROWTH OF DISLOCATION-FREE CRYSTALS.NARAMOTO H; KAMADA K.1975; J. CRYST. GROWTH; NETHERL.; DA. 1975; VOL. 30; NO 2; PP. 145-150; BIBL. 15 REF.Article

ETUDE D'UN MONOCRISTAL DE GERMANIUM DOPE PAR DU SILICIUMKEKUA MG.1975; SOOBSHCH. AKAD. NAUK GRUZ. S.S.R.; S.S.S.R.; DA. 1975; VOL. 80; NO 1; PP. 121-124; ABS. GEORGIEN ANGL; BIBL. 9 REF.Article

THE GROWTH OF HIGHLY PERFECT ALUMINA PLATELETS AND OTHER OXIDES BY SOLVENT VAPOUR TRANSPORT.WHITE EAD; WOOD JDC.1974; J. MATER. SCI.; G.B.; DA. 1974; VOL. 9; NO 12; PP. 1999-2006; BIBL. 11 REF.Article

ZUM KONTRAST BEI ROENTGENTOPOGRAPHISCHEN AUFNAHMEN VON EINKRISTALLINEM GAAS. = LE CONTRASTE DES CLICHES DE GAAS MONOCRISTALLIN EN TOPOGRAPHIE DE RAYONS XRICHTER H; JEGERLEHNER K; MOHR U et al.1974; KRISTALL U. TECH.; DTSCH.; DA. 1974; VOL. 9; NO 4; PP. 405-412; ABS. ANGL.; BIBL. 16 REF.Article

GROWTH OF SINGLE CRYSTALS OF BARIUM TUNGSTATE BY DOUBLE DECOMPOSITION IN MELTPATEL AR; ARORA SK.1973; J. CRYST. GROWTH; NETHERL.; DA. 1973; VOL. 18; NO 2; PP. 175-178; BIBL. 8 REF.Serial Issue

STRUCTURE DES MONOCRISTAUX DE PERICLASE FONDUEPEREPELITSYN VA; BRON VA; YUZVUK DI et al.1973; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1973; VOL. 9; NO 5; PP. 814-818; BIBL. 11 REF.Serial Issue

MELT GROWTH OF CRYSTALLINE SILICON TUBES BY A CAPILLARY ACTION SHAPING TECHNIQUE.CISZEK TF.1975; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1975; VOL. 32; NO 2; PP. 521-527; ABS. ALLEM.; BIBL. 9 REF.Article

RECRYSTALLIZATION OF THERMALLY EVAPORATED CDS FILMS VIA AN H₂S HEAT-TREATMENT PROCESS.FRAAS LM; BLEHA WP; BRAATZ P et al.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 2; PP. 491-495; BIBL. 17 REF.Article

PENETRATION DES DEFAUTS DANS LES MONOCRISTAUX DE SILICIUM OBTENUS PAR LA METHODE CZOCHRASKISIROTA NN; DENIS VA; UNYARKHA LS et al.1975; DOKL. AKAD. NAUK B.S.S.R.; S.S.S.R.; DA. 1975; VOL. 19; NO 4; PP. 320-323; BIBL. 10 REF.Article

ANWENDUNG DER UMWEGANREGUNG FUER DIE BESTIMMUNG DER GUETE VON KRISTALLOBERFLAECHEN. = UTILISATION DE L'EXCITATION INDIRECTE POUR LA DETERMINATION DE LA BONNE QUALITE DES SURFACES CRISTALLINESMELLE W.1974; KRISTALL U. TECH.; DTSCH.; DA. 1974; VOL. 9; NO 5; PP. 511-515; ABS. ANGL.; BIBL. 6 REF.Article

LITHIUM HYDRIDE SINGLE CRYSTALSHOLCOMBE CE JR; JOHNSON DH.1973; J. CRYST. GROWTH; NETHERL.; DA. 1973; VOL. 19; NO 1; PP. 53-57; BIBL. 19 REF.Serial Issue

MELT GROWTH.HURLE DTJ.1973; NORTH-HOLL. SER. CRYST. GROWTH; NETHERL.; DA. 1973; VOL. 1; PP. 210-247; BIBL. 36 REF.; (CRYST. GROWTH. INT. SUMMER SCH.; NOORDWIJKERHOUT, NETH.; 1971)Conference Paper

X-RAY TOPOGRAPHIC INVESTIGATION OF DENDRITIC SILICON CRYSTALSDASHEVSKY MY; ISAAKJAN VA; KHATSERNOV MA et al.1972; KRISTALL U. TECH.; DTSCH.; DA. 1972; VOL. 7; NO 12; PP. 1359-1364; ABS. RUSSE; BIBL. 11 REF.Serial Issue

MAGNETIC CHARACTERIZATION OF BUBBLE GARNET FILMS IN AN LPE GROWTH FACILITY.PIERCE RD.1974; J. CRYST. GROWTH; NETHERL.; DA. 1974; VOL. 27; PP. 299-305; BIBL. 21 REF.Article

VACANCY CLUSTERS IN DISLOCATION-FREE SILICON AND GERMANIUM.DE KOCK AJR.1974; PHILIPS TECH. REV.; NETHERL.; DA. 1974; VOL. 34; NO 9; PP. 244-254; BIBL. 14 REF.Article