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Schottky barrier inhomogeneities at contacts to carbon-containing silicon/germanium alloysHATTAB, A; PERROSSIER, J. L; MEYER, F et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 89, Num 1-3, pp 284-287, issn 0921-5107Conference Paper

Characterization of high temperature annealing of InP by scanning photoluminescence and capacitance-voltage measurements of metal/insulator/semiconductor devicesTARDY, J; PERROSSIER, J. L; KRAFFT, F et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1991, Vol 9, Num 1-3, pp 325-330Conference Paper

Long-term stability of InP MIS devicesTARDY, J; THOMAS, I; VIKTOROVITCH, P et al.Applied surface science. 1991, Vol 50, Num 1-4, pp 383-389, issn 0169-4332, 7 p.Conference Paper

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