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A RELATIVISTIC GREEN MATRIX METHOD TO CALCULATE THE SURFACE STATES IN A THREE-DIMENSIONAL CRYSTAL SLABDHOORE F; PHARISEAU P.1980; PHYSICA A; ISSN 0378-4371; NLD; DA. 1980; VOL. 101; NO 1; PP. 49-66; BIBL. 7 REF.Article

PERTURBATION OF THE STATIC EUCLIDEAN ANTI-SELF-DUAL SU(2) YANG-MILLS EQUATIONSVERSCHELDE H; PHARISEAU P.1982; Z. PHYS. C, PART. FIELDS; ISSN 0170-9739; DEU; DA. 1982; VOL. 13; NO 2; PP. 165-172; BIBL. 11 REF.Article

THE INFLUENCE OF THE BULK FRENKEL EXCITONS IN A MOLECULAR CRYSTAL ON THE LOW-ENERGY-ELECTRON DIFFRACTION IN THE SPECULAR DIRECTION.NUYTS R; PHARISEAU P.1978; PHYSICA A; PAYS-BAS; DA. 1978; VOL. 91; NO 3-4; PP. 584-589; BIBL. 3 REF.Article

THE INFLUENCE OF THE FRENKEL EXCITONS IN MOLECULAR CRYSTALS ON THE ELASTIC DIFFERENTIAL SCATTERING CROSS SECTION FOR THE LOW-ENERGY-ELECTRON DIFFRACTION.NUYTS R; PHARISEAU P.1978; PHYSICA A; PAYS-BAS; DA. 1978; VOL. 91; NO 3-4; PP. 575-583; BIBL. 5 REF.Article

THE INFLUENCE OF THE SURFACE FRENKEL EXCITONS IN A MOLECULAR CRYSTAL ON THE LOW-ENERGY-ELECTRON DIFFRACTION IN THE SPECULAR DIRECTIONNUYTS R; PHARISEAU P.1978; PHYSICA A; NLD; DA. 1978; VOL. 94; NO 3-4; PP. 495-500; BIBL. 3 REF.Article

THE ROLE OF SURFACE FRENKEL EXCITONS IN LOW-ENERGY-ELECTRON DIFFRACTION THEORY FOR MOLECULAR CRYSTALSNUYTS R; PHARISEAU P.1978; PHYSICA A; NLD; DA. 1978; VOL. 94; NO 3-4; PP. 486-494; BIBL. 6 REF.Article

THE ELECTRONICS STRUCTURE OF MOLECULES HAVING ARBITRARY BOUNDARIES.SCHEIRE L; PHARISEAU P.1975; INTERNATION. J. QUANTUM CHEM.; U.S.A.; DA. 1975; VOL. 9; NO 5; PP. 887-900; ABS. FR. ALLEM.; BIBL. 9 REF.Article

QUANTUM TRANSPORT EQUATIONS FOR VIBRATING ISOTOPICALLY DISORDERED CRYSTALS.VAN KEER R; PHARISEAU P.1978; PHYSICA A; PAYS-BAS; DA. 1978; VOL. 90; NO 2; PP. 245-259; BIBL. 9 REF.Article

MSW-SCF-XALPHA STUDIES OF SOME SILICON COMPOUNDS. I: IMINOSILICON (HNSI)SCHEIRE L; ROTTHIER R; PHARISEAU P et al.1981; INT. J. QUANTUM CHEM.; ISSN 0020-7608; USA; DA. 1981; VOL. 20; NO 4; PP. 879-885; BIBL. 21 REF.Article

A KKR-APPROACH TO THE CALCULATION OF THE ELECTRONIC STRUCTURE FOR AN EDGE DISLOCATIONROTTHIER R; SCHEIRE L; PHARISEAU P et al.1981; PHYSICA, A; ISSN 0378-4371; NLD; DA. 1981; VOL. 108; NO 2-3; PP. 605-612; BIBL. 3 REF.Article

AN MTO THEORY FOR THE CALCULATION OF DEEP LEVELS IN SEMICONDUCTORS DUE TO A NONSUBSTITUTIONAL IMPURITY CLUSTERROTTHIER R; SCHEIRE L; PHARISEAU P et al.1981; PHYSICA, A; ISSN 0378-4371; NLD; DA. 1981; VOL. 108; NO 2-3; PP. 622-630; BIBL. 4 REF.Article

The electronic structure of surfaces ― a Green function methodWILLE, L; ROTTHIER, R; PHARISEAU, P et al.Physica. A. 1985, Vol 132, Num 1, pp 179-189, issn 0378-4371Article

Casimir effect in n dimensionsVERSCHELDE, H; WILLE, L; PHARISEAU, P et al.Physics letters. Section B. 1984, Vol 149, Num 4-5, pp 396-398, issn 0370-2693Article

A new solvable one-dimensional crystal modelWILLE, L; VERSCHELDE, H; PHARISEAU, P et al.Journal of physics. A, mathematical and general. 1983, Vol 16, Num 18, pp L771-L775, issn 0305-4470Article

ON THE ELECTRONIC STRUCTURE OF THE XENON FLUORIDESSCHEIRE L; PHARISEAU P; NUYTS R et al.1980; PHYSICA A; ISSN 0378-4371; NLD; DA. 1980; VOL. 101; NO 1; PP. 22-48; BIBL. 30 REF.Article