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FILMS ET COUCHES DE METAUX LANTHANIDESLISHENKO LG; NAZAROVA TS; ROZEN AA et al.1972; PRIBORY TEKH. EKSPER.; S.S.S.R.; DA. 1972; NO 4; PP. 243-244; BIBL. 6 REF.Serial Issue

CHEMICAL VAPOR DEPOSITION OF THIN-FILM PLATINUMRAND MJ.1973; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1973; VOL. 120; NO 5; PP. 686-693; BIBL. 21 REF.Serial Issue

CRISTALLISATION DU ZINC EN PHASE VAPEURGRIBOVSKIJ SV; KVATER LI; FRISHBERG IV et al.1975; IZVEST. AKAD. NAUK S.S.S.R., METALLY; S.S.S.R.; DA. 1975; NO 5; PP. 44-46; BIBL. 5 REF.Article

SAFETY IN CHEMICAL VAPOR DEPOSITION = SECURITE DANS LES DEPOTS EN PHASE VAPEURHAMMOND ML.1980; SOLID STATE TECHNOL.; ISSN 0038-111X; USA; DA. 1980; VOL. 23; NO 12; PP. 104-109; BIBL. 7 REF.Article

ETUDE DU PROCESSUS DE PRECIPITATION DES COUCHES MINCES DE AL A PARTIR DE LA PHASE VAPEURDOMRACHEV GA; ZHUK BV; KHAMYLOV VK et al.1976; DOKL. AKAD. NAUK S.S.S.R.; S.S.S.R.; DA. 1976; VOL. 226; NO 4; PP. 839-842; BIBL. 2 REF.Article

VAPOR PHASE PROCEDURE CUTS SOLDERING TIME, REDUCES DEFECTS1982; INSUL., CIRCUITS; ISSN 0020-4544; USA; DA. 1982; VOL. 28; NO 10; PP. 35-36Article

CHEMICAL VAPOR DEPOSITION OF SUPERCONDUCTING NB3GE HAVING HIGH TRANSITION TEMPERATURES.BRAGINSKI AI; ROLAND GW.1974; APPL. PHYS. LETTERS; U.S.A.; DA. 1974; VOL. 25; NO 12; PP. 762-763; BIBL. 12 REF.Article

GRAVIMETRIC STUDY OF GROWTH KINETICS OF BISMUTH THIN FILMS GROWN BY VAPOUR DEPOSITIONFUJIWARA S; TERAJIMA H.1973; PHILOS. MAG.; G.B.; DA. 1973; VOL. 27; NO 4; PP. 853-864; BIBL. 22 REF.Serial Issue

OBTAINING TEMPERATURE PARAMETERS FOR EVAPORATION BY SOLVING THE INVERTED PROBLEM OF THERMAL CONDUCTIVITYANISHCHENKO LM; LAVRENYUK S YU.1982; FIZIKA I HIMIJA. OBRABOTKI MATERIALOV; ISSN 0015-3214; SUN; DA. 1982; NO 6; PP. 26-28; BIBL. 3 REF.Article

NUOVE TECNOLOGIE NON INQUINANTI PER IL RIVESTIMENTO DEI MATERIALI MEDIANTE SISTEMI A PLASMA IN FASE VAPORE = A NEW TECHNOLOGY FOR VAPOUR DEPOSITION WITH A PLASMA = NOUVELLE TECHNOLOGIE POUR LES DEPOTS EN PHASE VAPEUR PAR PLASMAGARZINO G.1983; GALVANOTECNICA; ISSN 0016-4240; ITA; DA. 1983; VOL. 34; NO 1; PP. 1-7Article

LOW TEMPERATURE PHOTO-CVD SILICON NITRIDE: PROPERTIES AND APPLICATIONSPETERS JW; GEBHART FL; HALL TC et al.1980; SOLID STATE TECHNOL.; ISSN 0038-111X; USA; DA. 1980; VOL. 23; NO 9; PP. 121-126; BIBL. 7 REF.Article

EFFECTS OF CVD OXIDE ON PHOSPHORUS-DIFFUSED EMITTERS IN SILICONKOJI T; TSENG WF; MAYER JW et al.1979; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1979; VOL. 26; PP. 1310-1312; BIBL. 5 REF.Article

COLLECTION AND ANALYSIS OF TRACE ORGANIC VAPOR POLLUTANTS IN AMBIENT ATMOSPHERESPELLIZZARI ED; BUNCH JE; CARPENTER BH et al.1975; ENVIRONMENT. SCI. TECHNOL.; U.S.A.; DA. 1975; VOL. 9; NO 6; PP. 552-560; BIBL. 54 REF.Article

VAPOR GROWTH OF INP.MIZUNO O.1975; (JAP. J. APPL. PHYS.; JAP.; DA. 1975; VOL. 14; NO 4; PP. 451-457; BIBL. 20 REF.Article

CROISSANCE DE CRISTAUX FILIFORMES DE BI PAR DEPOT A PARTIR DE LA PHASE GAZEUSEGAJDUKOV YU P; DANILOVA NP.1972; S.S.S.R.; DA. 1972; NO 5; PP. 233-234; BIBL. 5 REF.Serial Issue

DEPOT DE MOLYBDENE EN PHASE GAZEUSE PAR DECOMPOSITION DE L'HEXAFLUORURE DE MOLYBDENEBARANDON R.1975; DGRST-7371344; FR.; DA. 1975; PP. 1-29; BIBL. 1 P.; (RAPP. FINAL ACTION CONCERTEE: COMPOSANTS CIRCUITS MICROMINITURISES)Report

THE BASIC PRINCIPLES OF CHEMICAL VAPOUR DEPOSITION (CVD).VIGUIE JC.1974; IN: SCI. TECHNOL. SURF. COATING. NATO ADV. STUDY INST.; LONDON; 1972; LONDON; ACAD. PRESS; DA. 1974; PP. 149-158; BIBL. 1 REF.Conference Paper

EINFLUSS DES SAUERSTOFFPARTIALDRUCKES BEI DER CD-, SE- UND CDSE-SCHICHTBILDUNG. I. ABTEILUNG DER GRUNDBEZIEHUNGEN UND AUSWAHL GEEIGNETER MATERIALIEN FUER DAS EXPERIMENT = INFLUENCE DE LA PRESSION PARTIELLE EN OXYGENE SUR LA FORMATION DES COUCHES DE CD, SE ET CDSE. I. DERIVATION DES RELATIONS FONDAMENTALES ET CHOIX DES MATERIAUX PROPRE AUX EXPERIENCESHAMERSKY J.1975; THIN SOLID FILMS; NETHERL.; DA. 1975; VOL. 29; NO 2; PP. 237-248; ABS. ANGL.; BIBL. 5 REF.Article

FACTORS CONTROLLING THE STRUCTURE OF SPUTTERED TA FILMSFEINSTEIN LG; HUTTEMANN RD.1973; THIN SOLID FILMS; NETHERL.; DA. 1973; VOL. 16; NO 2; PP. 129-145; BIBL. 1 P. 1/2Serial Issue

THE INFLUENCE OF ION BOMBARDMENT ON THE MICROSTRUCTURE OF THICK DEPOSITS PRODUCED BY HIGH RATE PHYSICAL VAPOR DEPOSITION PROCESSESBUNSHAH RF; JUNTZ RS.1972; J. VACUUM SCI. TECHNOL.; U.S.A.; DA. 1972; VOL. 9; NO 6; PP. 1404-1405; BIBL. 7 REF.Serial Issue

CONTINUOUS VAPOR PHASE SOLDERING SYSTEMS PLAY VALUABLE ROLES1981; INSUL., CIRCUITS; ISSN 0020-4544; USA; DA. 1981; VOL. 27; NO 10; PP. 20-21Article

PROPRIETES PHYSIQUES STRUCTURALES DU MOLYBDENE OBTENU PAR REDUCTION A L'HYDROGENE DE SON HEXAFLUORUREKOROLEV YU M; RYCHAGOV AV.1979; FIZ. KHIM. OBRABOT. MATER.; SUN; DA. 1979; NO 2; PP. 128-135; BIBL. 7 REF.Article

GOLD FILMS FOR THE CONTROL AND UTILISATION OF RADIANT ENERGYLANGLEY RC.1975; GOLD BULL.; S. AFR.; DA. 1975; VOL. 8; NO 2; PP. 34; BIBL. 18 REF.Article

VAPORS OF THE ELEMENTS AS CHEMICAL REAGENTSKLABUNDE KJ.1975; AMER. LAB.; U.S.A.; DA. 1975; VOL. 7; NO 11; PP. 35-44 (9 P.); BIBL. 41 REF.Article

NEW VAPOUR DEPOSITION TECHNIQUE.DUGDALE RA.1974; NATURE; G.B.; DA. 1974; VOL. 249; NO 5456; PP. 440-441; BIBL. 13 REF.Article

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