ETUDE LUMINESCENTE DE LA STRUCTURE DES BANDES ELECTRONIQUES DANS LE IN_1-XGA_XAS_1-YP_YONTON A; CHIKOTKA RD.1973; IZVEST. AKAD. NAUK S.S.S.R., SER. FIZ.; S.S.S.R.; DA. 1973; VOL. 37; NO 3; PP. 560-565; BIBL. 15 REF.; (MATER. MEZDUNAR. KONF. LYUMIN.; LENINGRAD; 1972)Conference Paper

OPTICALLY INDUCED LOW PHOTOLUMINESCENCE REGIONS IN INGAASPFUKUI T; HORIKOSHI Y.1979; JAP. J. APPL. PHYS.; JPN; DA. 1979; VOL. 18; NO 1; PP. 127-132; BIBL. 9 REF.Article

RENDEMENT QUANTIQUE DE LUMINESCENCE DES HETEROSTRUCTURES DOUBLES INGAASPBERT NA; GARBUZOV DZ; GORELENOK AT et al.1980; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1980; VOL. 14; NO 4; PP. 680-684; BIBL. 14 REF.Article

PROPRIETES OPTIQUES DES SOLUTIONS SOLIDES DE GA_XIN_1-XAS_YP_1-YZINGER GM; IL'IN MA; RASHEVSKAYA EP et al.1979; FITZ. TVERD. TELA; SUN; DA. 1979; VOL. 21; NO 9; PP. 2647-2655; BIBL. 15 REF.Article

PROPRIETES DE PHOTOLUMINESCENCE DES COUCHES EPITAXIQUES DE GAINASP NKOLESNIK LI; LOSHINSKIJ AM; ROGULIN V YU et al.1979; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1979; VOL. 13; NO 6; PP. 1151-1155; BIBL. 5 REF.Article

ETUDE DE LA STRUCTURE DE BANDES DES SOLUTIONS SOLIDES DE INGAASPGRINYAEV SN; IL'IN MA; LUKOMSKI AI et al.1980; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1980; VOL. 14; NO 4; PP. 760-763; BIBL. 16 REF.Article

MODULATION CHARACTERISTICS OF INGAASP/INP L.E.D.S. AT 1.5 MU M WAVELENGTHMACHIDA S; NAGAI H; KIMURA T et al.1979; ELECTRON. LETTERS; GBR; DA. 1979; VOL. 15; NO 6; PP. 175-177; BIBL. 11 REF.Article

PHONON-ASSISTED RECOMBINATION IN A MULTIPLE-QUANTUM-WELL LPE INP-IN_1-XGA_XP_1-2AS₂ HETEROSTRUCTURE LASERREZEK EA; CHIN R; HOLONYAK N JR et al.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 35; NO 1; PP. 45-47; BIBL. 9 REF.Article

THE THERMAL-EXPANSION PARAMETERS OF SOME GA_XIN_1-XAS_YP_1-Y ALLOYSBISARO R; MERENDA P; PEARSALL TP et al.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 34; NO 1; PP. 100-102; BIBL. 12 REF.Article

VARIATION THERMIQUE DE LA LARGEUR DE LA BANDE INTERDITE DES SOLUTIONS SOLIDES GAP_XAS_1-X, (GAP)_X(INAS)_1-XSIROTA NN; SMIRNOVA GF.1976; VESCI AKAD. NAVUK B.S.S.R., FIZ.-MAT. NAVUK; S.S.S.R.; DA. 1976; NO 6; PP. 59-62; BIBL. 6 REF.Article

QUANTUM-WELL INP-IN_1-XGA_XP_1-ZAS_Z HETEROSTRUCTURE LASERS GROWN BY LIQUID PHASE EPITAXY (LPE)REZEK EA; CHIN R; HOLONYAK N JR et al.1980; J. ELECTRON. MATER.; ISSN 0361-5235; USA; DA. 1980; VOL. 9; NO 1; PP. 1-27; BIBL. 29 REF.Article

DIRECT MODULATION CHARACTERISTICS OF GAINASP/INP D.H. LASERS WITH VARIOUS STRIPE WIDTHS MEASURED BY SHARP-PULSE METHODSAKAKIBARA Y; FURUYA K; SUEMATSU Y et al.1979; ELECTRON. LETTERS; GBR; DA. 1979; VOL. 15; NO 19; PP. 594-596; BIBL. 7 REF.Article

IN GAASP/INP DISTRIBUTED-FEEDBACK INJECTION LASERS FABRICATED BY ONE-STEP LIQUID PHASE EPITAXYDOI A; FUKUZAWA T; NAKAMURA M et al.1979; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1979; VOL. 35; NO 6; PP. 441-443; BIBL. 7 REF.Article

TEMPERATURE SENSITIVE THRESHOLD CURRENT OF INGAASP-INP DOUBLE HETEROSTRUCTURE LASERSHORIKOSHI Y; FURUKAWA Y.1979; JAP. J. APPL. PHYS.; JPN; DA. 1979; VOL. 18; NO 4; PP. 809-815; BIBL. 17 REF.Article

THE MECHANISM OF OPTICALLY INDUCED DEGRADATION IN INP/IN_1-XGA_XAS_YP_1-Y HETEROSTRUCTURESMAHAJAN S; JOHNSTON WD JR; POLLACK MA et al.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 34; NO 10; PP. 717-719; BIBL. 20 REF.Article

COMPOSITION DEPENDENCE OF THE BAND GAPS OF IN_1-XGA_XAS_1-YP_Y QUATERNARY SOLIDS LATTICE MATCHED ON INP SUBSTRATESNAKAJIMA K; YAMAGUCHI A; AKITA K et al.1978; J. APPL. PHYS.; USA; DA. 1978; VOL. 49; NO 12; PP. 5944-5950; BIBL. 61 REF.Article

DIELECTRIC-CONSTANT STEP, OF INP/IN_1-XGA_XAS_YP_1-YHENSHALL GD; GREENE PD; THOMPSON GHB et al.1978; ELECTRON. LETTERS; GBR; DA. 1978; VOL. 14; NO 24; PP. 796-797; BIBL. 3 REF.Article

TRANSFERRED ELECTRON PHOTOEMISSION TO 1.65 MU FROM AN INGAASP HETEROJUNCTION CATHODE.ESCHER JS; GREGORY PE; ANTYPAS GA et al.1978; J. APPL. PHYS.; U.S.A.; DA. 1978; VOL. 49; NO 1; PP. 447-449; BIBL. 23 REF.Article

INFLUENCE OF CENTRAL VALLEY EFFECTIVE MASS AND ALLOY SCATTERING ON TRANSIENT DRIFT VELOCITY IN GA_1-XIN_XP_1-YAS_YLITTLEJOHN MA; ARLEDGE LA; GLISSON TH et al.1979; ELECTRON. LETTERS; GBR; DA. 1979; VOL. 15; NO 19; PP. 586-588; BIBL. 16 REF.Article

NONRADIATIVE CARRIERS LOSS AND TEMPERATURE SENSITIVITY OF THRESHOLD IN 1.27 MU M (GALN) (ASP)/INP D.H. LASERSTHOMPSON GHB; HENSHALL GD.1980; ELECTRON. LETTERS; GBR; DA. 1980; VOL. 16; NO 1; PP. 42-44; BIBL. 5 REF.Article

SELF-SUSTAINED PULSATIONS IN GAINASP DIODE LASERSWALPOLE JN; LIND TA; HSIEH JJ et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 4; PP. 240-242; BIBL. 16 REF.Article

ANOMALOUS LUMINESCENCE NEAR THE INGAASP-INP HETEROJUNCTION INTERFACEFUKUI T; HORIKOSHI Y.1979; JAP. J. APPL. PHYS.; JPN; DA. 1979; VOL. 18; NO 5; PP. 961-965; BIBL. 13 REF.Article

ELECTROREFLECTANCE OF IN⁰,79)GA⁰,21)AS⁰,54)P⁰,46)NISHINO T; YAMAZOE Y; HAMAKAWA Y et al.1978; APPL. PHYS. LETTERS; USA; DA. 1978; VOL. 33; NO 10; PP. 861-862; BIBL. 15 REF.Article

LOW LEAKAGE CURRENT AND SATURATED REVERSE CHARACTERISTICS IN BROADAREA INGAASP DIODESCAPASSO F; LOGAN RA; FOY PW et al.1980; ELECTRON. LETTERS; GBR; DA. 1980; VOL. 16; NO 7; PP. 241-242; BIBL. 7 REF.Article

TRANSMISSION ELECTRON MICROSCOPE OBSERVATION OF DARK-SPOT DEFECTS IN INGAASP/INP DOUBLE-HETEROSTRUCTURE LIGHT-EMITTING DIODES AGED AT HIGH TEMPERATUREUEDA O; YAMAKOSHI S; KOMIYA S et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 4; PP. 300-301; BIBL. 6 REF.Article