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ETUDE LUMINESCENTE DE LA STRUCTURE DES BANDES ELECTRONIQUES DANS LE IN1-XGAXAS1-YPYONTON A; CHIKOTKA RD.1973; IZVEST. AKAD. NAUK S.S.S.R., SER. FIZ.; S.S.S.R.; DA. 1973; VOL. 37; NO 3; PP. 560-565; BIBL. 15 REF.; (MATER. MEZDUNAR. KONF. LYUMIN.; LENINGRAD; 1972)Conference Paper

ELECTROLUMINESCENCE A GRAND RENDEMENT DANS GAXIN1-XAS1-YPYDOLGINOV LM; IBRAKHIMOV N; MIL'VIDSKIJ MG et al.1975; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1975; VOL. 9; NO 7; PP. 1319-1323; BIBL. 3 REF.Article

OPTICALLY INDUCED LOW PHOTOLUMINESCENCE REGIONS IN INGAASPFUKUI T; HORIKOSHI Y.1979; JAP. J. APPL. PHYS.; JPN; DA. 1979; VOL. 18; NO 1; PP. 127-132; BIBL. 9 REF.Article

RENDEMENT QUANTIQUE DE LUMINESCENCE DES HETEROSTRUCTURES DOUBLES INGAASPBERT NA; GARBUZOV DZ; GORELENOK AT et al.1980; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1980; VOL. 14; NO 4; PP. 680-684; BIBL. 14 REF.Article

PROPRIETES OPTIQUES DES SOLUTIONS SOLIDES DE GAXIN1-XASYP1-YZINGER GM; IL'IN MA; RASHEVSKAYA EP et al.1979; FITZ. TVERD. TELA; SUN; DA. 1979; VOL. 21; NO 9; PP. 2647-2655; BIBL. 15 REF.Article

PHOTOEMISSION FROM CESIUM-OXIDE-ACTIVATED INGAASPJAMES LW; ANTYPAS GA; MOON RL et al.1973; APPL. PHYS. LETTERS; U.S.A.; DA. 1973; VOL. 22; NO 6; PP. 270-271; BIBL. 7 REF.Serial Issue

PROPRIETES DE PHOTOLUMINESCENCE DES COUCHES EPITAXIQUES DE GAINASP NKOLESNIK LI; LOSHINSKIJ AM; ROGULIN V YU et al.1979; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1979; VOL. 13; NO 6; PP. 1151-1155; BIBL. 5 REF.Article

ETUDE DE LA STRUCTURE DE BANDES DES SOLUTIONS SOLIDES DE INGAASPGRINYAEV SN; IL'IN MA; LUKOMSKI AI et al.1980; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1980; VOL. 14; NO 4; PP. 760-763; BIBL. 16 REF.Article

MODULATION CHARACTERISTICS OF INGAASP/INP L.E.D.S. AT 1.5 MU M WAVELENGTHMACHIDA S; NAGAI H; KIMURA T et al.1979; ELECTRON. LETTERS; GBR; DA. 1979; VOL. 15; NO 6; PP. 175-177; BIBL. 11 REF.Article

PHONON-ASSISTED RECOMBINATION IN A MULTIPLE-QUANTUM-WELL LPE INP-IN1-XGAXP1-2AS2 HETEROSTRUCTURE LASERREZEK EA; CHIN R; HOLONYAK N JR et al.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 35; NO 1; PP. 45-47; BIBL. 9 REF.Article

THE THERMAL-EXPANSION PARAMETERS OF SOME GAXIN1-XASYP1-Y ALLOYSBISARO R; MERENDA P; PEARSALL TP et al.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 34; NO 1; PP. 100-102; BIBL. 12 REF.Article

VARIATION THERMIQUE DE LA LARGEUR DE LA BANDE INTERDITE DES SOLUTIONS SOLIDES GAPXAS1-X, (GAP)X(INAS)1-XSIROTA NN; SMIRNOVA GF.1976; VESCI AKAD. NAVUK B.S.S.R., FIZ.-MAT. NAVUK; S.S.S.R.; DA. 1976; NO 6; PP. 59-62; BIBL. 6 REF.Article

QUANTUM-WELL INP-IN1-XGAXP1-ZASZ HETEROSTRUCTURE LASERS GROWN BY LIQUID PHASE EPITAXY (LPE)REZEK EA; CHIN R; HOLONYAK N JR et al.1980; J. ELECTRON. MATER.; ISSN 0361-5235; USA; DA. 1980; VOL. 9; NO 1; PP. 1-27; BIBL. 29 REF.Article

DIRECT MODULATION CHARACTERISTICS OF GAINASP/INP D.H. LASERS WITH VARIOUS STRIPE WIDTHS MEASURED BY SHARP-PULSE METHODSAKAKIBARA Y; FURUYA K; SUEMATSU Y et al.1979; ELECTRON. LETTERS; GBR; DA. 1979; VOL. 15; NO 19; PP. 594-596; BIBL. 7 REF.Article

IN GAASP/INP DISTRIBUTED-FEEDBACK INJECTION LASERS FABRICATED BY ONE-STEP LIQUID PHASE EPITAXYDOI A; FUKUZAWA T; NAKAMURA M et al.1979; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1979; VOL. 35; NO 6; PP. 441-443; BIBL. 7 REF.Article

TEMPERATURE SENSITIVE THRESHOLD CURRENT OF INGAASP-INP DOUBLE HETEROSTRUCTURE LASERSHORIKOSHI Y; FURUKAWA Y.1979; JAP. J. APPL. PHYS.; JPN; DA. 1979; VOL. 18; NO 4; PP. 809-815; BIBL. 17 REF.Article

THE MECHANISM OF OPTICALLY INDUCED DEGRADATION IN INP/IN1-XGAXASYP1-Y HETEROSTRUCTURESMAHAJAN S; JOHNSTON WD JR; POLLACK MA et al.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 34; NO 10; PP. 717-719; BIBL. 20 REF.Article

COMPOSITION DEPENDENCE OF THE BAND GAPS OF IN1-XGAXAS1-YPY QUATERNARY SOLIDS LATTICE MATCHED ON INP SUBSTRATESNAKAJIMA K; YAMAGUCHI A; AKITA K et al.1978; J. APPL. PHYS.; USA; DA. 1978; VOL. 49; NO 12; PP. 5944-5950; BIBL. 61 REF.Article

DIELECTRIC-CONSTANT STEP, OF INP/IN1-XGAXASYP1-YHENSHALL GD; GREENE PD; THOMPSON GHB et al.1978; ELECTRON. LETTERS; GBR; DA. 1978; VOL. 14; NO 24; PP. 796-797; BIBL. 3 REF.Article

TRANSFERRED ELECTRON PHOTOEMISSION TO 1.65 MU FROM AN INGAASP HETEROJUNCTION CATHODE.ESCHER JS; GREGORY PE; ANTYPAS GA et al.1978; J. APPL. PHYS.; U.S.A.; DA. 1978; VOL. 49; NO 1; PP. 447-449; BIBL. 23 REF.Article

OSCILLATION CHARACTERISTICS IN GAASP/INPDH LASERS WITH SELF-ALIGNED STRUCTUREYANO M; NISHI H; TAKUSAGAWA M et al.1979; I.E.E.E. J. QUANTUM ELECTRON.; USA; DA. 1979; VOL. 15; NO 12; PP. 1388-1395; BIBL. 24 REF.Article

BAND GAP VERSUS COMPOSITION AND DEMONSTRATION OF VEGARD'S LAW FOR IN1-XGAXASYP1-Y LATTICE MATCHED TO INPNAHURY RE; POLLACK MA; JOHNSTON WD JR et al.1978; APPL. PHYS. LETTERS; USA; DA. 1978; VOL. 33; NO 7; PP. 659-661; BIBL. 17 REF.Article

HIGH-OUTPUT POWER INGAASP (LAMBDA =1.3 MU M) STRIPBURIED HETEROSTRUCTURE LASERSNELSON RJ; WRIGHT PD; BARNES PA et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 5; PP. 358-360; BIBL. 7 REF.Article

DUAL-WAVELENGTH DEMULTIPLEXING INGAASP PHOTODIODECAMPBELL JC; LEE TP; DENTAI AG et al.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 34; NO 6; PP. 401-402; BIBL. 10 REF.Article

ELECTROABSORPTION IN GAINASPKINGSTON RH.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 34; NO 11; PP. 744-746; BIBL. 5 REF.Article

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