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THE INVESTIGATION OF RADIATION DAMAGE BY ELECTRON BEAM ABSORPTION MEASUREMENTS.FRITZSCHE CR; ROTHEMUND W.1978; APPL. PHYS.; DEU; DA. 1978; VOL. 16; NO 4; PP. 339-343; BIBL. 9 REF.Article

ION INDUCED CARBON CONTAMINATION AND RECOIL IMPLANTATION.NAEHRING FK; SCHMIDT A; SCHONEICH J et al.1977; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1977; VOL. 44; NO 2; PP. K141-K145; BIBL. 15 REF.Article

THEORETICAL OSCILLATOR STRENGTHS FOR SOME TRANSITIONS IN P(III), AS(III), SB(III) AND BI(III).MIGDALEK J.1976; J. QUANT. SPECTROSC. RAD. TRANSFER; G.B.; DA. 1976; VOL. 16; NO 5; PP. 385-388; BIBL. 7 REF.Article

THE ABSORPTION SPECTRUM OF DIATOMIC PHOSPHORUS BETWEEN 1370 AND 600 A.CARROLL PK; MITCHELL PI.1975; PROC. R. SOC. LONDON, A; G.B.; DA. 1975; VOL. 342; NO 1628; PP. 93-111; H.T. 2; BIBL. 22 REF.Article

DOPAGE DU SILICIUM PAR DES IONS DE PETITE ENERGIE A TEMPERATURE ELEVEE DU SUPPORTKACHURIN GA; LOVYAGIN RN; STEPINA NP et al.1981; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1981; VOL. 15; NO 2; PP. 290-295; BIBL. 13 REF.Article

CORRELATION OF THE STRUCTURE AND ELECTRICAL PROPERTIES OF ION-IMPLANTED AND LASER-ANNEALED SILICONCULLIS AG; WEBBER HC; CHEW NG et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 7; PP. 547-550; BIBL. 20 REF.Article

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FORMATION DE DEFAUTS DANS L'ARSENIURE DE GALLIUM PAR IMPLANTATION D'IONS PHOSPHORETASHLYKOV IS.1980; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1980; VOL. 14; NO 11; PP. 2146-2151; BIBL. 12 REF.Article

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