Pascal and Francis Bibliographic Databases

Help

Search results

Your search

kw.\*:("PHOSPHORUS ION")

Document Type [dt]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Publication Year[py]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Discipline (document) [di]

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Language

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Author Country

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Origin

A-Z Z-A Frequency ↓ Frequency ↑
Export in CSV

Results 1 to 25 of 121

  • Page / 5
Export

Selection :

  • and

THE THERMAL OXIDATION OF ION-IMPLANTED ZIRCONIUM = OXYDATION THERMIQUE DU ZR IMPLANTE D'IONSBENTINI GG; BERTI M; CARNERA A et al.1980; CORROS. SCI.; ISSN 0010-938X; GBR; DA. 1980; VOL. 20; NO 1; PP. 27-39; BIBL. 28 REF.Article

FORMATION OF BLISTER DEFECTS IN ANODIC ELECTRODEPOSITED RESIN FILMS ON ALUMINIUM = BILDUNG VON BLASENDEFEKTEN BEIM ANODISCHEN ELEKTROPLATTIEREN VON KUNSTHARZFILMEN AUF ALUMINIUM = FORMATION DE SOUFFLURES LORS DU DEPOT ELECTROLYTIQUE ANODIQUE DE FILMS DE RESINE SYNTHETIQUE SUR DE L'ALUMINIUMBAKER BR.1981; MET. FINISH.; USA; DA. 1981-03; VOL. 79; NO 3; PP. 47-52; BIBL. 4 REF.Article

REACTIONS D'OXYDO-REDUCTION ET D'ACIDITE DANS LE DISULFATE DE POTASSIUM FONDU A 430OC. APPLICATION A LA CATALYSE D'OXYDATION DU BUTENE-1 PAR L'OXYGENE.DURAND A.1977; ; S.L.; DA. 1977; PP. (234P.); BIBL. 5 P. 1/2; (THESE DOCT. SCI. PHYS.; PIERRE ET MARIE CURIE PARIS VI)Thesis

ION BOMBARDMENT INDUCED AMORPHOUS LAYERS ON SINGLE CRYSTAL STAINLESS STEEL. A COMBINED RUTHERFORD BACKSCATTERING AND TRANSMISSION ELECTRON MICROSCOPY STUDY = COUCHES AMORPHES INDUITES PAR BOMBARDEMENT IONIQUE SUR DE L'ACIER INOXYDABLE MONOCRISTALLIN. ETUDE PAR RETRODIFFUSION DE RUTHERFORD ET MICROSCOPIE ELECTRONIQUE EN TRANSMISSION COMBINEESGRANT WA; WHITTON JL; WILLIAMS JS et al.1980; RAD. EFFECTS; GBR; DA. 1980; VOL. 49; NO 1-3; PP. 65-69; BIBL. 10 REF.Conference Paper

ETUDE DES REACTIONS D'OXYDO-REDUCTION DU TRICHLORURE DE PHOSPHORE ET DE L'OXYCHLORURE DE VANADIUMV) AVEC DES SILICAGELS RENFERMANT DU VANADIUM(V) ET DU PHOSPHORE(IIIMALYGIN AA; VOLKOVA AN; KOL'TSOV SI et al.1976; ZH. OBSHCH. KHIM.; S.S.S.R.; DA. 1976; VOL. 46; NO 10; PP. 2166-2169; BIBL. 12 REF.Article

SUPERCONDUCTING AND ELECTRICAL PROPERTIES OF RHENIUM NITRIDE AND AMORPHOUS RHENIUM PREPARED BY ION IMPLANTATION = PROPRIETES SUPRACONDUCTRICES ET ELECTRIQUES DU NITRURE DE RHENIUM ET DU RHENIUM AMORPHE PREPARES PAR IMPLANTATION IONIQUEHAQ AU; MEYER O.1983; JOURNAL OF LOW TEMPERATURE PHYSICS; ISSN 0022-2291; USA; DA. 1983; VOL. 50; NO 1-2; PP. 123-133; BIBL. 16 REF.Article

ION INDUCED PROPERTIES OF SUPERCONDUCTING RHENIUM FILMS = PROPRIETES INDUITES PAR IONS DES COUCHES MINCES DE RHENIUM SUPRACONDUCTRICESUL HAQ A.1982; KERNFORSCHUNGSZENT. KARLSR.; ISSN 0303-4003; DEU; DA. 1982; VOL. 3312; 69 P.; BIBL. 62 REF.;[; DISSERTATION/UNIV. KARLSRUHE]Thesis

APPLICATION OF AN EXTENDED LINEAR CASCADE MODEL TO THE SPUTTERING OF AG, AU, AND PT BY HEAVY ATOMIC AND MOLECULAR IONS = APPLICATION D'UN MODELE DE CASCADE LINEAIRE ETENDU A LA PULVERISATION DE AG, AU ET PT PAR DES IONS ATOMIQUES LOURDS ET DES IONS MOLECULAIRESTHOMPSON DA.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 2; PP. 982-989; BIBL. 36 REF.Article

CRYSTALLINE PHASE TRANSITIONS PRODUCED BY ION IMPLANTATION = TRANSITIONS DE PHASES CRISTALLINES PRODUITES PAR IMPLANTATION IONIQUEJOHNSON E; WOHLENBERG T; GRANT WA et al.1979; PHASE TRANSITIONS; GBR; DA. 1979; VOL. 1; NO 1; PP. 23-34; BIBL. 17 REF.Article

EXTRACTIVE SEPARATION OF P(V) AND SI(IV) IN A MOLYBDATEVANADATE SYSTEM WITH HIGH-MOLECULAR AMINES AND PHOSPHORUS DETERMINATION IN STEELS.IVANOV NA; TODOROVA NG; BOYKOVA DB et al.1977; C.R. ACAD. BULG. SCI.; BULG.; DA. 1977; VOL. 30; NO 6; PP. 867-870; BIBL. 10 REF.Article

Boron and phosphorus ion emissions from a Cu-P-Pt-B liquid metal ion source = Emissions d'ions bore et phosphore d'une source d'ions métalliques liquide Cu-P-Pt-BUMEMURA, K; ISHITANI, T; TAMURA, H et al.Japanese journal of applied physics. 1986, Vol 25, Num 11, pp L885-L887, issn 0021-4922Article

The interaction between point defects introduced by implantation and dislocations in silicon = Interaction dans le silicium entre les défauts ponctuels, induits par implantation d'ions, et les dislocations = Die Wechselwirkung zwischen Punktdefekten, die durch Ionenimplantation induziert werden, und Versetzungen in SiliziumKALININ, V.V; GERASIMENKO, N.N.Physica status solidi. A. Applied research. 1983, Vol 76, Num 1, pp 65-70, issn 0031-8965Article

Direct observation of lunar pick-up ions near the MoonMALL, U; KIRSCH, E; CIERPKA, K et al.Geophysical research letters. 1998, Vol 25, Num 20, pp 3799-3802, issn 0094-8276Article

Kinetics of phosphorus during hemodialysis and the calculation of its effective dialysis clearanceSCHÜCK, O; KASLIKOVA, J.Clinical nephrology. 1997, Vol 47, Num 6, pp 379-383, issn 0301-0430Article

Transformation to amorphous state of metals by ion implantation: P in Ni = Transformation à l'état amorphe de métaux par implantation ionique: P dans NiCOHEN, C; BENYAGOUB, A; BERNAS, H et al.Physical review. B, Condensed matter. 1985, Vol 31, Num 1, pp 5-14, issn 0163-1829Article

Newly identified forbidden transitions within the ground configuration of ions of very low abundance P, Cl, K, and CoFELDMAN, U; LANDI, E; CURDT, W et al.The Astrophysical journal. 2004, Vol 607, Num 2, pp 1039-1045, issn 0004-637X, 7 p., 1Article

An ion-implantation model incorporating damage calculations in crystalline targetsCRANDLE, T. L; MULVANEY, B. J.IEEE electron device letters. 1990, Vol 11, Num 1, pp 42-44, issn 0741-3106Article

The optimization of photoluminescence properties of ion-implantation-produced nanostructures on the basis of Si inclusions in a SiO2 matrixTRUSHIN, S. A; MIKHAYLOV, A. N; TETELBAUM, D. I et al.Surface & coatings technology. 2002, Vol 158-59, pp 717-719, issn 0257-8972Conference Paper

Effect of annealing and oxide layer thickness on doping profile shape of «through-oxide» implanted P+ ions in textured siliconEL-DESSOUKI, M. S; GALLONI, R.Renewable energy. 1991, Vol 1, Num 1, pp 67-75, issn 0960-1481Article

Moderately resistant phosphorus forms in subtropical ultisol of argentinaZUBILLAGA, Marta Susana; GIUFFRE, Lidia.Communications in soil science and plant analysis. 2000, Vol 31, Num 19-20, pp 3231-3238, issn 0010-3624Article

The role of phosphorus in the development of secondary hyperparathyroidism and parathyroid cell proliferation in chronic renal failure : Calcium metabolism in health and uremiaSLATOPOLSKY, E; DUSSO, A; BROWN, A. J et al.The American journal of the medical sciences. 1999, Vol 317, Num 6, pp 370-376, issn 0002-9629Article

P-isotopic exchange values in relation to po mineralisation in soils with very low P-sorbing capacitiesLOPEZ-HERNANDEZ, D; BROSSARD, M; FROSSARD, E et al.Soil biology & biochemistry. 1998, Vol 30, Num 13, pp 1663-1670, issn 0038-0717Article

Fabrication of P+ implanted shallow junctions with TiSi2 in Si MOS structureJANA, T; BOSE, D. N; SUBRAHMANYAM, P. V. S et al.Indian journal of engineering & materials sciences. 1996, Vol 3, Num 4, pp 148-151, issn 0971-4588Article

Theoretical study of possible processes for the interstellar production of phosphorus compounds. Reaction of P+ with SH2LOPEZ, X; UGALDE, J. M; BARRIENTOS, C et al.Journal of physical chemistry (1952). 1993, Vol 97, Num 8, pp 1521-1525, issn 0022-3654Article

Effect of ion doping conditions on electrical conductivity of amorphous silicon films and its application to thin film transistorsRAMESH KAKKAD; SHIMANO, T; IBARAKI, N et al.Japanese journal of applied physics. 1992, Vol 31, Num 12B, pp 4563-4566, issn 0021-4922, 1Article

  • Page / 5