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THE GROWTH AND ELECTRICAL CHARACTERISTICS OF EPITAXIAL LAYERS OF ZINC SULPHIDE AND OF ZINC SELENIDE ON P-TYPE GALLIUM PHOSPHIDESLEGER KJ; MILNES AG.1972; INTERNATION. J. ELECTRON.; G.B.; DA. 1972; VOL. 33; NO 5; PP. 565-581; BIBL. 1P.Serial Issue

A STUDY OF ELECTRON BINDING AT THE ISOELECTRONIC NITROGEN CENTRE IN GAP AND INGAP.ROSS SF; JAROS M.1974; J. PHYS. C; G.B.; DA. 1974; VOL. 7; NO 12; PP. L235-L238; BIBL. 9 REF.Article

MAGNETIC CIRCULAR DICHROISM OF INDIRECT EXCITONIC TRANSITIONS IN GAL AND IN1-XGAXP.DONECKER J; KLUGE J.1976; PHYS. STATUS SOLIDI, B; ALLEM.; DA. 1976; VOL. 77; NO 1; PP. 243-248; ABS. ALLEM.; BIBL. 15 REF.Article

RECENT ADVANCES IN VISIBLE LED'S.BHARGAVA RN.1975; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1975; VOL. 22; NO 9; PP. 691-701; BIBL. 1 P. 1/2Article

INFRARED ABSORPTION BY ZONE EDGE LATTICE VIBRATIONS IN MIXED GALLIUM INDIUM PHOSPHIDE.BESERMAN R; SCHMELTZER D.1977; SOLID STATE COMMUNIC.; G.B.; DA. 1977; VOL. 24; NO 11; PP. 793-795; BIBL. 12 REF.Article

PROPERTIES OF HIGH SENSITIVITY GAP/INXGA1-XP/GAAS: (CS-O) TRANSMISSION PHOTOCATHODESFISHER DG; OLSEN GH.1979; J. APPL. PHYS.; USA; DA. 1979; VOL. 50; NO 4; PP. 2930-2935; BIBL. 26 REF.Article

SPECTROSCOPIE DIFFERENTIELLE DES SEMICONDUCTEURS INDIRECTS PAR PIEZOMODULATION. ETUDE DE GAP, ALSB, GAX IN1-XP, ALX GA1-XSB.MERLE P.1976; AO-CNRS-12475; FR.; DA. 1976; PP. 1-140; BIBL. 11 P. 1/2; (THESE DOCT. SCI. PHYS.; UNIV. SCI. TECH. LANGUEDOC)Thesis

EFFECTS OF UNIAXIAL STRESS ON LUMINESCENCE OF GAP(S)ALTIER J; CAMASSEL J; MATHIEU H et al.1979; PHYS. LETTERS, A; NLD; DA. 1979; VOL. 72; NO 3; PP. 239-241; BIBL. 10 REF.Article

ETUDE DE L'ANNIHILATION DES POSITONS DANS LES COMPOSES SEMICONDUCTEURS GAAS ET GAPARIFOV PU; ARUTYUNOV N YU; IL'YASON AZ et al.1978; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1978; VOL. 12; NO 5; PP. 891-894; BIBL. 16 REF.Article

KATODOLU-MINESZENZ AN HALBLEITERN. ANREGUNG UND REGISTRIERUNG = CATHODOLUMINESCENCE DE SEMICONDUCTEURS. EXCITATION ET ENREGISTREMENTHANSEL T; ZEHE A.1973; EXPER. TECH. PHYS.; DTSCH.; DA. 1973; VOL. 21; NO 1; PP. 77-85; ABS. ANGL.; BIBL. 19 REF.Serial Issue

GAP PHOTOVOLTAGE TRANSIENTS.DAHLBERG SC; CHELIKOWSKY JR; ORR WA et al.1977; PHYS. REV., B; U.S.A.; DA. 1977; VOL. 15; NO 6; PP. 3163-3168; BIBL. 20 REF.Article

REFRACTION DE LA LUMIERE DANS LE PHOSPHURE DE GALLIUMPIKHTIN AN; PROKOPENKO VT; RONDAREV VS et al.1977; ZH. PRIKL. SPEKTROSK., BELORUS. S.S.R.; S.S.S.R.; DA. 1977; VOL. 27; NO 2; PP. 308-314; BIBL. 17 REF.Article

PRESENT LIMITATIONS AND ULTIMATE PERFORMANCE OF LIGHT EMITTING DIODES.HAMILTON B; PEAKER AR.1974; IN: ELECTRO-OPT. INT. '74 CONF. PROC. TECH. PROGR.; BRIGHTON, ENGL.; 1974; SURBITON, SURREY; KIVER COMMUN.; DA. 1974; PP. 153-160; BIBL. 7 REF.Conference Paper

CARACTERISTIQUES ELECTRIQUES DES INDICATEURS AU PHOSPHURE DE GALLIUMNIKOLAEV YU N; TARASOV VM.1974; MIKROELEKTRONIKA; S.S.S.R.; DA. 1974; VOL. 3; NO 6; PP. 489-492; BIBL. 12 REF.Article

ETUDE DE L'ABSORPTION DU PHOSPHURE DE GALLIUM PAFANAS'EVA SS; KAZAKOVA LA; SAMORUKOV BE et al.1974; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1974; VOL. 8; NO 9; PP. 1714-1719; BIBL. 11 REF.Article

MEHR LICHT DURCH GALLIUMPHOSPHID = AMELIORATION DE LA LUMINESCENCE PAR L'EMPLOI DU PHOSPHURE DE GALLIUMSIEBERT HP.1973; ELEKTRONIK; DTSCH.; DA. 1973; VOL. 22; NO 4; PP. 156-158; BIBL. 3 REF.Serial Issue

A NEW METHOD IN THE THEORY OF INDIRECT EXCITONS IN SEMICONDUCTORS.LIPARI NO; ALTARELLI M.1976; SOLID STATE COMMUNIC.; G.B.; DA. 1976; VOL. 18; NO 8; PP. 951-954; BIBL. 11 REF.Article

EXTRINSIC ELECTROABSORPTION: N SYMMETRY IN GAP.BAUER RS; BURNHAM RD.1975; PHYS. REV. LETTERS; U.S.A.; DA. 1975; VOL. 34; NO 17; PP. 1088-1091; BIBL. 20 REF.Article

SCATTERING OF POLARITONS BY POINT DEFECTS IN SPATIALLY DISPERSIVE MEDIA.MADDOX R; MILLS DL.1975; PHYS. REV., B; U.S.A.; DA. 1975; VOL. 11; NO 6; PP. 2229-2236; BIBL. 7 REF.Article

PROPRIETES REACTIVES DE DIODES ELECTROLUMINESCENTES AU PHOSPHURE DE GALLIUMABDULLAEV GB; ISKENDER ZADE ZA; ALIKHANOVA SH A et al.1972; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1972; VOL. 6; NO 11; PP. 2150-2153; BIBL. 11 REF.Serial Issue

AN EXPERIMENTAL STUDY OF HIGH-EFFICIENCY GAP:N GREEN-LIGHT-EMITTING DIODESLADANY I; KRESSEL H.1972; R.C.A. REV.; U.S.A.; DA. 1972; VOL. 33; NO 3; PP. 517-536; BIBL. 8 REF.Serial Issue

DEEP LEVELS STUDIES OF N-FREE AND N-DOPED GAP GROWN BY TDM-CVPNISHIZAWA JI; KOIKE M; MIURA K et al.1980; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1980; VOL. 19; NO 1; PP. 25-30; BIBL. 23 REF.Article

LUMINESCENT PROPERTIES VARIATION TOWARD GROWTH DIRECTION IN NITROGEN DOPED GAP N-LPE LAYER.BEPPU T.1975; JAP. J. APPL. PHYS.; JAP.; DA. 1975; VOL. 14; NO 6; PP. 761-768; BIBL. 18 REF.Article

SUBMILLIMETRE CYCLOTRON RESONANCE OF ELECTRONS IN GAP.LEOTIN J; OUSSET JC; BARBASTE R et al.1975; SOLID STATE COMMUNIC.; G.B.; DA. 1975; VOL. 16; NO 4; PP. 363-366; BIBL. 18 REF.Article

THEROY OF RAMAN SCATTERING BY SURFACE POLARITONS.NIKOMA JS; LOUDON R.1975; J. PHYS. C; G.B.; DA. 1975; VOL. 8; NO 12; PP. 1950-1968; BIBL. 26 REF.Article

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