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Results 1 to 25 of 465

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THE GROWTH AND ELECTRICAL CHARACTERISTICS OF EPITAXIAL LAYERS OF ZINC SULPHIDE AND OF ZINC SELENIDE ON P-TYPE GALLIUM PHOSPHIDESLEGER KJ; MILNES AG.1972; INTERNATION. J. ELECTRON.; G.B.; DA. 1972; VOL. 33; NO 5; PP. 565-581; BIBL. 1P.Serial Issue

A STUDY OF ELECTRON BINDING AT THE ISOELECTRONIC NITROGEN CENTRE IN GAP AND INGAP.ROSS SF; JAROS M.1974; J. PHYS. C; G.B.; DA. 1974; VOL. 7; NO 12; PP. L235-L238; BIBL. 9 REF.Article

RECENT ADVANCES IN VISIBLE LED'S.BHARGAVA RN.1975; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1975; VOL. 22; NO 9; PP. 691-701; BIBL. 1 P. 1/2Article

INFRARED ABSORPTION BY ZONE EDGE LATTICE VIBRATIONS IN MIXED GALLIUM INDIUM PHOSPHIDE.BESERMAN R; SCHMELTZER D.1977; SOLID STATE COMMUNIC.; G.B.; DA. 1977; VOL. 24; NO 11; PP. 793-795; BIBL. 12 REF.Article

PROPERTIES OF HIGH SENSITIVITY GAP/INXGA1-XP/GAAS: (CS-O) TRANSMISSION PHOTOCATHODESFISHER DG; OLSEN GH.1979; J. APPL. PHYS.; USA; DA. 1979; VOL. 50; NO 4; PP. 2930-2935; BIBL. 26 REF.Article

SPECTROSCOPIE DIFFERENTIELLE DES SEMICONDUCTEURS INDIRECTS PAR PIEZOMODULATION. ETUDE DE GAP, ALSB, GAX IN1-XP, ALX GA1-XSB.MERLE P.1976; AO-CNRS-12475; FR.; DA. 1976; PP. 1-140; BIBL. 11 P. 1/2; (THESE DOCT. SCI. PHYS.; UNIV. SCI. TECH. LANGUEDOC)Thesis

A NEW METHOD IN THE THEORY OF INDIRECT EXCITONS IN SEMICONDUCTORS.LIPARI NO; ALTARELLI M.1976; SOLID STATE COMMUNIC.; G.B.; DA. 1976; VOL. 18; NO 8; PP. 951-954; BIBL. 11 REF.Article

EXTRINSIC ELECTROABSORPTION: N SYMMETRY IN GAP.BAUER RS; BURNHAM RD.1975; PHYS. REV. LETTERS; U.S.A.; DA. 1975; VOL. 34; NO 17; PP. 1088-1091; BIBL. 20 REF.Article

SCATTERING OF POLARITONS BY POINT DEFECTS IN SPATIALLY DISPERSIVE MEDIA.MADDOX R; MILLS DL.1975; PHYS. REV., B; U.S.A.; DA. 1975; VOL. 11; NO 6; PP. 2229-2236; BIBL. 7 REF.Article

PROPRIETES REACTIVES DE DIODES ELECTROLUMINESCENTES AU PHOSPHURE DE GALLIUMABDULLAEV GB; ISKENDER ZADE ZA; ALIKHANOVA SH A et al.1972; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1972; VOL. 6; NO 11; PP. 2150-2153; BIBL. 11 REF.Serial Issue

AN EXPERIMENTAL STUDY OF HIGH-EFFICIENCY GAP:N GREEN-LIGHT-EMITTING DIODESLADANY I; KRESSEL H.1972; R.C.A. REV.; U.S.A.; DA. 1972; VOL. 33; NO 3; PP. 517-536; BIBL. 8 REF.Serial Issue

DEEP LEVELS STUDIES OF N-FREE AND N-DOPED GAP GROWN BY TDM-CVPNISHIZAWA JI; KOIKE M; MIURA K et al.1980; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1980; VOL. 19; NO 1; PP. 25-30; BIBL. 23 REF.Article

LUMINESCENT PROPERTIES VARIATION TOWARD GROWTH DIRECTION IN NITROGEN DOPED GAP N-LPE LAYER.BEPPU T.1975; JAP. J. APPL. PHYS.; JAP.; DA. 1975; VOL. 14; NO 6; PP. 761-768; BIBL. 18 REF.Article

SUBMILLIMETRE CYCLOTRON RESONANCE OF ELECTRONS IN GAP.LEOTIN J; OUSSET JC; BARBASTE R et al.1975; SOLID STATE COMMUNIC.; G.B.; DA. 1975; VOL. 16; NO 4; PP. 363-366; BIBL. 18 REF.Article

THEROY OF RAMAN SCATTERING BY SURFACE POLARITONS.NIKOMA JS; LOUDON R.1975; J. PHYS. C; G.B.; DA. 1975; VOL. 8; NO 12; PP. 1950-1968; BIBL. 26 REF.Article

OXYGEN CONCENTRATION AND EFFICIENCY IN RED-EMITTING GAP LAMPSZAFAR IQBAL M; NORTHROP DC.1973; J. PHYS. D; G.B.; DA. 1973; VOL. 6; NO 5; PP. 605-611; BIBL. 5 REF.Serial Issue

THE ORIGINS OF AFTERPULSES IN PHOTOMULTIPLIERSCOATES PB.1973; J. PHYS. D; G.B.; DA. 1973; VOL. 6; NO 10; PP. 1159-1166; BIBL. 5 REF.Serial Issue

COURANTS D'EXCES ET BRUITS DES DIODES AU GAP POLARISEES EN DIRECTLUK'YANCHIKOVA NB; GARBAR NP; SHEJNKMAN MK et al.1972; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1972; VOL. 6; NO 5; PP. 869-877; BIBL. 15 REF.Serial Issue

EFFECTS OF DISLOCATIONS ON PHOTOLUMINESCENT PROPERTIES IN LIQUID PHASE EPITAXIAL GAP.SUZUKI T; MATSUMOTO Y.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 26; NO 8; PP. 431-433; BIBL. 7 REF.Article

RESONANT CANCELLATION OF BRILLOUIN-SCATTERING AT THE INDIRECT EDGE IN GAP.YAMADA M; HAMAGUCHI C; NAKAI J et al.1975; SOLID STATE COMMUNIC.; G.B.; DA. 1975; VOL. 17; NO 7; PP. 879-881; BIBL. 16 REF.Article

ACTION DU RAYONNEMENT INFRAROUGE SUR LA PHOTOLUMINESCENCE APPARAISSANT DANS LE PHOSPHURE DE GALLIUM PAR UN MECANISME D'ABSORPTION EN DEUX ETAPES DE LA LUMIERE ROUGEGAJVORON VG; ELINSON MI.1975; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1975; VOL. 9; NO 10; PP. 1934-1937; BIBL. 5 REF.Article

A DEEP CENTER ASSOCIATED WITH THE PRESENCE OF NITROGEN IN GAP.SMITH BL; HAYES TJ; PEAKER AR et al.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 26; NO 3; PP. 122-124; BIBL. 13 REF.Article

ELECTROFAX PRINTING WITH GALLIUM PHOSPHIDE DIODES = IMPRESSION PAR PROCEDE ELECTROFAX, AVEC EMPLOI DE DIODES AU PHOSPHURE DE GALLIUMHARTMANN J; HUTTER EC; LADANY I et al.1972; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1972; VOL. 19; NO 10; PP. 1090-1093; BIBL. 7 REF.Serial Issue

OBSERVATION OF NONEXPONENTIAL LONG TIME DECAY OF DONOR-ACCEPTOR PAIR LUMINESCENCE IN GAP. = OBSERVATION D'UN AMORTISSEMENT NON EXPONENTIEL DE LONGUE DUREE DE LA LUMINESCENCE DE PAIRES ACCEPTEUR-DONNEUR DANS GAPBIN DE MANN R; FISCHER H; KRENER H et al.1976; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1976; VOL. 34; NO 1; PP. K63-K65; BIBL. 3 REF.Article

THE LOCATION OF THE LOWEST CONDUCTION BAND MINIMA IN GALLIUM PHOSPHIDE FROM BOUND EXCITON LUMINESCENCE.DEAN PJ; HERBERT DC.1976; J. LUMINESC.; NETHERL.; DA. 1976; VOL. 14; NO 1; PP. 55-79; BIBL. 2 P. 1/2Article

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