FUNDAMENTAL PHOTOLUMINESCENCE OF UNDOPED INP CRYSTALS CLEANED BY THE FLOATING ZONE METHOD.POPOV AS.1976; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1976; VOL. 37; NO 1; PP. K53-K56; BIBL. 3 REF.Article

DIFFUSION PROFILES OF ZINC IN INDIUM PHOSPHIDE.TUCK B; HOOPER A.1975; J. PHYS. D; G.B.; DA. 1975; VOL. 8; NO 15; PP. 1806-1821; BIBL. 15 REF.Article

SURFACE FEATURES ON ZINC-DIFFUSED INDIUM PHOSPHIDE.TUCK B; HOOPER A.1976; J. MATER. SCI.; G.B.; DA. 1976; VOL. 11; NO 3; PP. 491-499; BIBL. 12 REF.Article

INP MICROWAVE OSCILLATORS WITH 2-ZONE CATHODES.GRAY KW; PATTISON JE; REES HD et al.1975; ELECTRON. LETTERS; G.B.; DA. 1975; VOL. 11; NO 17; PP. 402-403; BIBL. 4 REF.Article

ETUDE DE LA MAGNETORESISTANCE NEGATIVE DANS INP NEMEL'YANENKO OV; LAGUNOVA TS; MASAGUTOV KG et al.1975; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1975; VOL. 9; NO 8; PP. 1517-1522; BIBL. 13 REF.Article

TRANSFERRED ELECTRON PHOTOEMISSION FROM INP.BELL RL; JAMES LW; MOON RL et al.1974; APPL. PHYS. LETTERS; U.S.A.; DA. 1974; VOL. 25; NO 11; PP. 645-646; BIBL. 7 REF.Article

PROPRIETES THERMODYNAMIQUES DU PHOSPHURE D'INDIUMABBASOV AS; MUSTAFAEV FM; SULEJMANOV DM et al.1974; IZVEST. AKAD. NAUK AZERBAJDZH. SSR., FIZ.-TEKH. MAT. NAUK; S.S.S.R.; DA. 1974; NO 4; PP. 65-66; ABS. AZERB. ANGL.; BIBL. 10 REF.Article

MODEL FOR FE²⁺ INTRACENTER-INDUCED PHOTOCONDUCTIVITY IN INP:FELOOK DC.1979; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1979; VOL. 20; NO 10; PP. 4160-4166; BIBL. 20 REF.Article

PHOTOVOLTAIC EFFECT AND INTERBAND MAGNETO-OPTICAL TRANSITIONS IN INP.ROCHON P; FORTIN E.1975; PHYS. REV., B; U.S.A.; DA. 1975; VOL. 12; NO 12; PP. 5803-5810; BIBL. 26 REF.Article

PRESSURE EFFECTS OF THE THRESHOLD FOR HIGH-FIELD INSTABILITIES IN INP.PITT GD; VYAS MKR.1975; J. PHYS. C; G.B.; DA. 1975; VOL. 8; NO 2; PP. 138-146; BIBL. 27 REF.Article

NEW TECHNIQUES FOR THE STUDY OF GUNN DIODE CONTACTS.GURNEY WSC; ORTON JW.1974; SOLID-STATE ELECTRON.; G.B.; DA. 1974; VOL. 17; NO 7; PP. 743-750; BIBL. 24 REF.Article

OVERLENGTH MODES OF INP TRANSFERRED-ELECTRON DEVICES.JONES D; REES HD.1974; ELECTRON LETTERS; G.B.; DA. 1974; VOL. 10; NO 12; PP. 234-235; BIBL. 4 REF.Article

REPLY TO COMMENT ON DETERMINATION OF THE VELOCITY*FIELD CHARACTERISTIC FOR N-TYPE INDIUM PHOSPHIDE FROM DIPOLE-DOMAIN MEASUREMENTSPREW BA.1973; ELECTRON. LETTERS; G.B.; DA. 1973; VOL. 9; NO 10; PP. 236-238; BIBL. 11 REF.Serial Issue

SUR L'INTERRELATION DE LA SOLUBILITE ET DE LA CONCENTRATION DES PORTEURS DE CHARGE LORS DU DOPAGE DU PHOSPHURE D'INDIUM PAR DES ELEMENTS DES TYPES DONNEUR ET ACCEPTEURGLAZOV VM; NAGIEV VA; RZAEV FR et al.1973; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1973; VOL. 7; NO 2; PP. 280-285; BIBL. 14 REF.Serial Issue

ACCUMULATION TRANSIT MODE IN TRANSFERRED-ELECTRON OSCILLATORSJONES D; REES HD.1972; ELECTRON. LETTERS; G.B.; DA. 1972; VOL. 8; NO 23; PP. 566-567; BIBL. 9 REF.Serial Issue

A NEW OPTICAL METHOD TO INVESTIGATE DEEP TRAPS IN GAAS AND INPRUEHLE W; LOESCH K; FISCHBACH JU et al.1979; PHYS. STATUS SOLIDI, A; DDR; DA. 1979; VOL. 52; NO 1; PP. K65-K67; BIBL. 5 REF.Article

DILATATION THERMIQUE ET VARIATIONS DE VOLUME AU COURS DE LA FUSION DU PHOSPHURE D'INDIUMGLAZOV VM; DAVLETOV K; NASHEL'SKIJ A YA et al.1977; ZH. FIZ. KHIM.; S.S.S.R.; DA. 1977; VOL. 51; NO 10; PP. 2558-2562; BIBL. 16 REF.Article

RESISTANCE ELECTRIQUE DE TYPE S ET EFFET PHOTOELECTRIQUES DANS DES CRISTAUX INP TYPE N(CU)BERKELIEV A; DURDYEV K; MEREDOV A et al.1977; IZVEST. AKAD. NAUK TURKM. S.S.R., FIZ.-TEKH. KHIM. GEOL. NAUK; S.S.S.R.; DA. 1977; NO 2; PP. 36-39; ABS. TURKM. ANGL.; BIBL. 7 REF.Article

OHMIC CONTACTS FOR MODERATELY RESISTIVE P-TYPE INP.SCHIAVONE LM; PRITCHARD AA.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 1; PP. 452-453; BIBL. 7 REF.Article

AVALANCHE EFFECTS IN BULK INP MICROWAVE DIODE OSCILLATORSJERVIS BW; HOBSON GS.1972; PROC. I.E.E.E.; U.S.A.; DA. 1972; VOL. 60; NO 6; PP. 722-723; BIBL. 10 REF.Serial Issue

PROGRESS WITH IN P TRANSFERRED ELECTRON DEVICES.COLLIVER DJ.sdIN: MICROWAVE SEMICOND. DEVICES, CIRCUITS APPL. PROC. 4TH BIENN. CORNELL ELECTR. ENG. CONF.; ITHACA, N.Y.; 1973; ITHACA, N.Y.; CORNELL UNIV.; DA. S.D.; PP. 11-19; BIBL. 12 REF.Miscellaneous

DYE LASER SELECTIVE SPECTROSCOPY IN BULK-GROWN INDIUM PHOSPHIDEDEAN PJ; ROBBINS DJ; BISHOP SG et al.1979; J. PHYS. C: SOLID STATE PHYS.; ISSN 0022-3719; GBR; DA. 1979; VOL. 12; NO 24; PP. 5567-5575; BIBL. 15 REF.Article

EVALUATION OF MICROSTRUCTURES ASSOCIATED WITH HARDNESS INDENTATIONS IN INPBRASEN D.1978; J. MATER. SCI.; GBR; DA. 1978; VOL. 13; NO 8; PP. 1776-1780; BIBL. 8 REF.Article

AMBIENT GAS INFLUENCE ON PHOTOLUMINESCENCE INTENSITY FROM INP AND GAAS CLEAVED SURFACESNAGAI H; NOGUCHI Y.1978; APPL. PHYS. LETTERS; USA; DA. 1978; VOL. 33; NO 4; PP. 312-314; BIBL. 2 REF.Article

DOMAIN TRANSIT-MODE OSCILLATION IN PLANAR-TYPE GUNN DEVICE OF INP.NAKAMURA Y; SHIBAYAMA A; OHMI T et al.1974; PROC. I.E.E.E.; U.S.A.; DA. 1974; VOL. 62; NO 1; PP. 142-143; BIBL. 11 REF.Article