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Photocapacitance and photoreflectance characterization of Pb3O4 photoelectretsAVANESYAN, V. T; BADAKHSHAN, A.International symposium on electrets. 1999, pp 205-208, isbn 0-7803-5025-1Conference Paper

Integrated photocapacitive position-sensitive detector made in CMOS technologySCHMIDT, W.-D; AHLERS, H; HELMIG, V et al.Sensors and actuators. A, Physical. 1993, Vol 39, Num 2, pp 117-124, issn 0924-4247Article

SILICON PHOTODIODE AS A PHOTOSENSITIVE CAPACITANCE.STEPOWICZ WJ.1977; SOLID STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 10; PP. 817-823; BIBL. 3 REF.Article

Photothermal capacitance measurements on GaP:NiSZAWELSKA, H. R; MUDHAR, P. S; ALLEN, J. W et al.Journal of physics. C. Solid state physics. 1984, Vol 17, Num 16, pp 2981-2992, issn 0022-3719Article

DEEP LEVEL PHOTOCAPACITANCE SPECTRA OF GREEN-EMITTING GAP LAMPS.IQBAL MZ.1977; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1977; VOL. 41; NO 2; PP. K155-K156; BIBL. 4 REF.Article

Variations spectrales de la photocapacité de l'interface ZnO-électrolytePANOSYAN, ZH. R; POGOSYAN, A. A; MELIKSETYAN, V. A et al.Fizika tverdogo tela. 1985, Vol 27, Num 6, pp 1866-1868, issn 0367-3294Article

PHOTOCAPACITANCE QUENCHING EFFECT FOR "OXYGEN" IN GAASVINCENT G; BOIS D.1978; SOLID STATE COMMUNIC.; GBR; DA. 1978; VOL. 27; NO 4; PP. 431-434; BIBL. 13 REF.Article

Spectral distributions of photoquenching rate and multimetastable states for migdap electron traps (EL2 family) in GaAsTANIGUCHI, M; IKOMA, T.Applied physics letters. 1984, Vol 45, Num 1, pp 69-71, issn 0003-6951Article

PHOTOCAPACITIVE MIS INFRARED DETECTORS.SHER A; CROUCH RK; LU SSM et al.1978; APPL. PHYS. LETTERS; U.S.A.; DA. 1978; VOL. 32; NO 11; PP. 713-715; BIBL. 5 REF.Article

INFLUENCE DES PROCESSUS DE CAPTURE SUR LE COMPORTEMENT DE LA PHOTOCAPACITE DANS LES CRISTAUX DE GAAS (CRGLORIOZOVA RI; KOLESNIK LI; OMEL'YANOVSKIJ EH M et al.1977; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1977; VOL. 11; NO 1; PP. 124-127; BIBL. 6 REF.Article

OPERATION-INDUCED DEGRADATION OF GAP LIGHT-EMITTING DIODES.USAMI A; HAYASHI T.1976; I.E.E.E.J. QUANTUM ELECTRON.; U.S.A.; DA. 1976; VOL. 12; NO 10; PP. 574-579; BIBL. 15 REF.Article

Low-intensity differential photocapacitance of MOS structuresMOHAN CHANDRA, M; SURYAN, G.Solid-state electronics. 1983, Vol 26, Num 8, pp 731-737, issn 0038-1101Article

SENSORI DI IMMAGINI A STATO SOLIDO = DETECTEURS D'IMAGES A L'ETAT SOLIDEBACCARINI G; RUDAN M.1979; ALTA FREQ.; ITA; DA. 1979; VOL. 48; NO 1; PP. 4-15; BIBL. 20 REF.Article

Photocapacitance effect in-narrow band gap PbSnTe<In>KLIMOV, Alexander E; SHUMSKY, Vladimir N.SPIE proceedings series. 2003, pp 341-346, isbn 0-8194-4986-5, 6 p.Conference Paper

Photocapacitance effect in ZnxCd1-xTe-InSb structuresRADAUTSAN, S. I; KULIKOVA, O. V.Physica status solidi. A. Applied research. 1986, Vol 93, Num 2, pp K201-K203, issn 0031-8965Article

TUNNELING RELAXATION TIME MEASUREMENTS IN THIN OXIDE METAL OXIDE SEMICONDUCTOR CAPACITORSSHIMER JA; DAHLKE WE.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 8; PP. 734-735; BIBL. 8 REF.Article

ETUDE DE LA PHOTOCAPACITE DES DIODES DE SI<PT>AKHMEDOVA MM; LEBEDEV AA; MAKHKAMOV SH et al.1975; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1975; VOL. 9; NO 7; PP. 1305-1307; BIBL. 13 REF.Article

ETUDE DE LA PHOTOCAPACITE DE DIODES DE SI P A IMPURETE FERABDUGAFUROVA MA; KAPITONOVA LM; KOSTINA LS et al.1975; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1975; VOL. 9; NO 4; PP. 685-689; BIBL. 13 REF.Article

Effects of illumination on capacitance characteristics of Au/3C-SiC/p-Si/Al diodeKIM, K. S; GUPTA, R. K; CHUNG, G. S et al.Journal of alloys and compounds. 2011, Vol 509, Num 41, pp 10007-10013, issn 0925-8388, 7 p.Article

On the opportunity of increase of stability degree of parameters and characteristics of IR photoreceivers on the basis of Mo/Cds1-xSexABDINOV, A. Sh; MAMEDOV, H. M; HASANOV, H. A et al.Proceedings of SPIE, the International Society for Optical Engineering. 2005, pp 294-298, issn 0277-786X, isbn 0-8194-5828-7, 1Vol, 5 p.Conference Paper

Thermally induced deep centers in silicon doped with europium or lanthanumDALIEV, Kh. S; UTAMURADOVA, Sh. B; KHAMIDZHONOV, I. Kh et al.Inorganic materials. 2001, Vol 37, Num 5, pp 436-438, issn 0020-1685Article

Transient photocapacitance study in 4-nitro-4'-aminodiphenyl layersMACKUS, P; KOVALSKIJ, P. N; LIPSKIS, K et al.Colloid and polymer science (Print). 1992, Vol 270, Num 3, pp 243-248, issn 0303-402XArticle

Propriétés photo-électriques de films ultra-minces polymères pulvérisés utilisables pour photocapteursMIZUTANI, M; KARAHASHI, K; SASABE, H et al.Kobunshi ronbunshu (Tokyo). 1984, Vol 41, Num 4, pp 189-196, issn 0386-2186Article

OPTICAL PROPERTIES OF NICKEL (D9) IN GAP AND ZNSESZAWELSKA HR; NORAS JM; ALLEN JW et al.1981; J. PHYS., C, SOLID STATE PHYS.; ISSN 0022-3719; GBR; DA. 1981; VOL. 14; NO 28; PP. 4141-4152; BIBL. 16 REF.Article

GE PHOTOCAPACITIVE MIS INFRARED DETECTORSBINARI SC; MILLER WE; SHER A et al.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 12; PP. 7883-7886; BIBL. 7 REF.Article

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