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LOW BACKGROUND MICROWAVE-BIASED GE: HG PHOTOCONDUCTORS.CROUCH JN JR.sdIN: INT. CONF. INFRARED PHYS.; HONGGERBERG-ZUERICH; 1975; S.L.; DA. S.D.; PP. C22-C24; BIBL. 3 REF.Conference Paper

FAST PHOTOCONDUCTIVE GAAS DETECTORS MADE BY LASER STIMULATED MOCVDROTH W; SCHUMACHER H; BENEKING H et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 4; PP. 142-143; BIBL. 6 REF.Article

CARACTERISTIQUES LIMITES DES PHOTOCONDUCTEURS ET NIVEAU ADMISSIBLE DE MICROMINIATURISATION DES DISPOSITIFS REALISES A BASE DE PHOTOCONDUCTEURSBERISHVILI ZV; ZYUGANDV AN; MIKHELASHVILI VM et al.1977; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1977; NO 25; PP. 44-48; BIBL. 10 REF.Article

CORRECTION AUTOMATIQUE DE DISTORSIONS NON LINEAIRES ET GEOMETRIQUES DE L'ANALYSE D'IMAGES DANS LES DISPOSITIFS PHOTORESISTIFS DE TRAITEMENT DE L'INFORMATION CORRELATIVEBAKHRAKH LD; ISMAILOV TK; PASHAEV AM et al.1978; AKAD. NAUK AZERBAJDZH. S.S.R., DOKL.; SUN; DA. 1978; VOL. 34; NO 12; PP. 28-37; ABS. AZE/ENG; BIBL. 7 REF.Article

PROPERTIES OF HIGH PERFORMANCE BACKGROUND LIMITED P TYPE SI:ZN PHOTOCONDUCTORSSCLAR N.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 3; PP. 203-213; BIBL. 16 REF.Article

INVESTIGATION OF THE STABILITY OF PHOTOCONDUCTIVE CELLSMOLNAR I.1979; INTERNATIONAL SYMPOSIUM ON PHOTON-DETECTORS. 8/1978/PRAHA; HUN; BUDAPEST: IMEKO; DA. 1979; PP. 447-456; BIBL. 4 REF.Conference Paper

TIME-RESOLVING HIGH-INTENSITY LASER-LIGHT DETECTORS: A POSSIBLE NEW PHOTOCONDUCTIVE DEVICEFILLARD JP; DE MURCIA M; ALCHALABY K et al.1978; PROC. I.E.E.E.; USA; DA. 1978; VOL. 66; NO 5; PP. 602-604; BIBL. 6 REF.Article

A DIAMOND RADIATION DETECTOR.VERMEULEN LA; HARRIS AJ.1978; J. APPL. PHYS.; U.S.A.; DA. 1978; VOL. 49; NO 2; PP. 913-916; BIBL. 8 REF.Article

FAST PHOTOCONDUCTIVE OPTOELECTRONIC BROADBAND SWITCH WITH LOW CONTROL VOLTAGEMACDONALD RI; HARA EH; HUM RH et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 17; PP. 611-612; BIBL. 15 REF.Article

PICOSECOND MICROWAVE PULSE GENERATIONMOUROU G; STANCAMPIANO CV; BLUMENTHAL D et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 6; PP. 470-472; BIBL. 11 REF.Article

ON THE LONG-TERM STABILITY OF CDXHG1-XTE AT 300 KMICKLETHWAITE WFH; REDDEN RF.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 5; PP. 379-380; BIBL. 10 REF.Article

INP: FE PHOTOCONDUCTORS AS PHOTODETECTORSHAMMOND RB; PAULTER NG; WAGNER RS et al.1983; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1983; VOL. 30; NO 4; PP. 412-415; BIBL. 7 REF.Article

PHOTOCONDUCTIVE CELLS INCREASE THEIR SENSITIVITY.MURAKAMI K.1977; J. ELECTRON. ENGNG; JAP.; DA. 1977; NO 131; PP. 54-56Article

GERMANIUM DETECTOR FOR THE NEAR INFRAREDMCCLAREN IA; WAYNE RP.1981; J. PHOTOCHEM.; CHE; DA. 1981; VOL. 16; NO 1; PP. 9-18; BIBL. 20 REF.Article

THIN FILM LIGHT AMPLIFIERPORADA Z.1980; THIN SOLID FILMS; ISSN 0040-6090; CHE; DA. 1980; VOL. 71; NO 2; PP. 209-213; BIBL. 7 REF.Article

AN INTEGRATED PHOTOCONDUCTIVE DETECTOR AND WAVEGUIDE STRUCTUREGAMMEL JC; BALLANTYNE JM.1980; APPL. PHYS. LETT.; USA; DA. 1980; VOL. 36; NO 2; PP. 149-151; BIBL. 5 REF.Article

SULPHUR DOPED SILICON IR DETECTORS.MIGLIORATO P; ELLIOTT CT.1978; SOLID-STATE ELECTRON.; G.B.; DA. 1978; VOL. 21; NO 2; PP. 443-447; BIBL. 13 REF.Article

INFRARED DETECTOR TECHNOLOGY TODAY AND TOMORROW.BODE DE.1976; ELECTRO-OPT. SYST. DESIGN; U.S.A.; DA. 1976; VOL. 8; NO 12; PP. 42-46Article

FAR INFRARED PHOTOCONDUCTIVE DETECTORS FOR INFRARED ASTRONOMY.SHIVANANDAN K; MCNUTT DP; DAEHLER M et al.1975; IN: LONG-WAVELENGTH INFRARED. SEMIN. PROC. SOC. PHOTO-OPT. INSTRUM. ENG.; SAN DIEGO, CALIF.; 1975; PALOS VERDES ESTATES, CALIF.; S.P.I.E.; DA. 1975; PP. 48-52; BIBL. 9 REF.Conference Paper

CHARACTERISTICS OF PHOTOCONDUCTIVE DETECTOR UNDER REDUCED BACKGROUND CONDITIONS.SHIVANANDAN K.sdIN: INT. CONF. INFRARED PHYS.; HONGGERBERG-ZUERICH; 1975; S.L.; DA. S.D.; PP. C3-C6Conference Paper

FAR-IR PHOTOCONDUCTIVITY IN SILICON DOPED WITH SHALLOW DONOR IMPURITIES.NORTON P.sdIN: OPT. PHENOM. INFRARED MATER. TOP. MEET. DIG. TECH. PAPERS; ANNAPOLIS, MD.; 1976; S.L.; DA. S.D.; PP. TH C1.1-TH C1.3; BIBL. 8 REF.Conference Paper

Magnetic field effects in a photoconductive switchPARIKH, C. D; LINDHOLM, F. A.Journal of applied physics. 1988, Vol 64, Num 11, pp 6546-6551, issn 0021-8979Article

Fabrication of high-speed GaAs photoconductive pulse generators and sampling gates by ion implantationPAULTER, N. G; GIBBS, A. J; SINHA, D. N et al.I.E.E.E. transactions on electron devices. 1988, Vol 35, Num 12, pp 2343-2348, issn 0018-9383Article

Théorie d'une photorésistance monopolaire verticaleKOZLOVSKIJ, YU. YA; NEUSTROEV, L. N; OSIPOV, V. V et al.Radiotehnika i èlektronika. 1989, Vol 34, Num 8, pp 1729-1735, issn 0033-8494Article

A low leakage 10 000V silicon photoconductive switchKOO, J. C; MCWRIGHT, G. M; POCHA, M. D et al.Applied physics letters. 1984, Vol 45, Num 10, pp 1130-1131, issn 0003-6951Article

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