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Results 1 to 25 of 541

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TRANSIENT PHOTOCURRENT IN DIELECTRICS.RUDENKO AI.1977; INTERNATION. J. ELECTRON.; G.B.; DA. 1977; VOL. 42; NO 1; PP. 1-16; BIBL. 11 REF.Article

TRANSIENT PHOTOCURRENTS IN PYRENE-TCNE SINGLE CRYSTALS. I. CURRENTS CONTROLLED BY SURFACE LAYERS. = PHOTOCOURANTS TRANSITOIRES DANS DES MONOCRISTAUX DE PYRENE-TCNE. I. COURANTS CONTROLES PAR DES COUCHES DE SURFACEKAINO H.1975; J. PHYS. SOC. JAP.; JAP.; DA. 1975; VOL. 39; NO 3; PP. 708-714; BIBL. 5 REF.Article

RECOMBINATION AT DISLOCATIONS IN SILICONMERGEL D.1983; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1983; VOL. 75; NO 1; PP. 255-262; ABS. GER; BIBL. 12 REF.Article

MULTIPLE-TRAPPING OF ANOMALOUS TRANSIT-TIME DISPERSION IN ALPHA -SE.NOOLANDI J.1977; PHYS. REV., B; U.S.A.; DA. 1977; VOL. 16; NO 10; PP. 4466-4473; BIBL. 16 REF.Article

Dispersive and nondispersive transport in amorphous semiconductors in presence of bias illuminationZELDOV, E; WEISER, K.Physical review letters. 1984, Vol 53, Num 10, pp 1012-1015, issn 0031-9007Article

EQUIVALENCE OF MULTIPLE-TRAPPING MODEL AND TIME-DEPENDENT RANDOM WALK.NOOLANDI J.1977; PHYS. REV., B; U.S.A.; DA. 1977; VOL. 16; NO 10; PP. 4474-4479; BIBL. 11 REF.Article

PHOTOELECTRIC PROPERTIES OF CUPROUS OXIDE.POLLACK GP; TRIVICH D.1975; J. APPL. PHYS.; U.S.A.; DA. 1975; VOL. 46; NO 1; PP. 163-172; BIBL. 16 REF.Article

On the stability of transient photoconductivity on approaching equilibriumONGARO, Roger; MOHAMMED, Garoum; ALAIN, Pillonnet et al.Radiation effects and defects in solids. 2001, Vol 154, Num 1, pp 1-10, issn 1042-0150Article

Transient response of photoexcited electrons : Negative and oscillating currentRAICHEV, O. E; VASKO, F. T.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 19, pp 193304.1-193304.4, issn 1098-0121Article

STATIC AND IMPULSE PHOTOCONDUCTIVITY IN BI12GEO20PRAKASH SG; MAMADOV AM; LEBEDEVA NN et al.1980; INDIAN J. PURE APPL. PHYS.; ISSN 0019-5596; IND; DA. 1980; VOL. 18; NO 11; PP. 834-838; BIBL. 21 REF.Article

PHOTOINJECTION DANS LE FLUORURE DE POLYVINYLIDENEGUILLAUD G; MAITROT M.1982; JOURNAL DE PHYSIQUE. LETTRES; ISSN 0302-072X; FRA; DA. 1982; VOL. 43; NO 15; PP. L559-L564; ABS. ENG; BIBL. 8 REF.Article

INVESTIGATION ON TRAP DISTRIBUTION AND PHOTOELECTRONIC EFFECT DUE TO UV, IR AND VISIBLE LIGHT EXCITATION IN SELF-ACTIVATED ZNS CRYSTALS.ENOMOTO T; ANDERSON WW.1977; J. PHYS. CHEM. SOLIDS; G.B.; DA. 1977; VOL. 38; NO 3; PP. 247-253; BIBL. 18 REF.Article

TRANSIENT PHOTOCONDUCTIVITY NEAR A SURFACE IN A SEMI-INFINITE MEDIUMWHITE AM; MIGLIORATO P.1981; J. PHYS. D; ISSN 0022-3727; GBR; DA. 1981; VOL. 14; NO 3; PP. L23-L25Article

TEMPERATURE DEPENDENCE AND ANISOTROPY OF ELECTRON DRIFT MOBILITIES IN ANTHRAQUINONE.BURSHTEIN Z; WILLIAMS DF.1977; MOLEC. CRYST. LIQUID CRYST.; G.B.; DA. 1977; VOL. 43; NO 1-2; PP. 1-11; BIBL. 16 REF.Article

ANALYSIS OF TRANSIENT PHOTOCONDUCTIVITY IN COUNTERDOPED SILICON: GOLDMAHER EF; BICKLEY WP; DEBNEY BT et al.1982; JOURNAL OF PHYSICS. C. SOLID STATE PHYSICS; ISSN 0022-3719; GBR; DA. 1982; VOL. 15; NO 9; PP. 2011-2022; BIBL. 8 REF.Article

Hydrogenated amorphous boron: transient and steady photoconductivitySCHAFFER, J. P; PARK, H; LIND, J. H et al.Physica status solidi. A. Applied research. 1984, Vol 81, Num 1, pp K51-K55, issn 0031-8965Article

Photoconductance transient response in polycrystalline siliconPOON, E; HWANG, W; YANG, E. S et al.Journal of applied physics. 1985, Vol 57, Num 2, pp 338-344, issn 0021-8979Article

Photoconductivity decay kinetics in silver bromide photographic filmsDERI, R. J; SPOONHOWER, J. P; HAMILTON, J. F et al.Journal of applied physics. 1985, Vol 57, Num 6, pp 1968-1970, issn 0021-8979Article

The decay rate of transient photocurrents in semiconductorsHALPERN, V.Philosophical magazine. B. Physics of condensed matter. Electronic, optical and magnetic properties. 1985, Vol 52, Num 4, pp L75-L79, issn 0141-8637Article

The characterization of silicon nitride films by contactless transient photoconductivity measurementsKUNST, M; ABDALLAH, O; WÜNSCH, F et al.Thin solid films. 2001, Vol 383, Num 1-2, pp 61-64, issn 0040-6090Conference Paper

Recombination phenomena in Si GaAs : The approach of the advanced method of transient microwave photoconductivity (AMTMP)CRABTCHAK, S; COCIVERA, M.SPIE proceedings series. 1997, pp 235-242, isbn 0-8194-2765-9Conference Paper

The transient photoconductivity of inhomogeneous amorphous semiconductorsHALPERN, V.Philosophical magazine. B. Physics of condensed matter. Electronic, optical and magnetic properties. 1986, Vol 53, Num 6, pp 497-507, issn 0141-8637Article

Monophotonic ionization through a long-lived ion-pair: N,N,N',N'-tetramethylbenzidine in acetonitrile solutionHIRATA, Y; TAKIMOTO, M; MATAGA, N et al.Chemical physics letters. 1983, Vol 97, Num 6, pp 569-572, issn 0009-2614Article

Position sensitivity of transient photoconductivity in oxygen-deficient manganite thin filmsZIJIE YAN; XIAO YUAN; XIANG ZHANG et al.Journal of physics. D, Applied physics (Print). 2008, Vol 41, Num 13, issn 0022-3727, 135132.1-135302.3Article

First electronic conduction with high hole mobility in smectic a phase of a calamitic liquid crystalFUNAHASHI, M; HANNA, J.-I.Molecular crystals and liquid crystals science and technology. Section A, Molecular crystals and liquid crystals. 1997, Vol 304, pp 429-434, issn 1058-725XConference Paper

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