kw.\*:("PHOTOCOURANT")
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A NEW MICROPHONE BASED ON AN OPTICAL MEASURING PRINCIPLE.BUDAL K.1974; J. SOUND VIBR.; G.B.; DA. 1974; VOL. 36; NO 4; PP. 521-526Article
Etude numérique de la cellule photovoltaïque organique MPP/ZnPc = Numerical study of the organic photovoltaic cell MPP/ZnPcBOUCHEKOUF, S; MARIR, B; BENABBAS-MARIR, M et al.Revue des énergies renouvelables. 2009, Vol 12, Num 2, pp 163-174, issn 1112-2242, 12 p.Article
USE OF PHOTOCURRENT-VOLTAGE-CHARACTERISTICS OF MOS STRUCTURES TO DETERMINE INSULATOR BULK TRAPPED CHARGE DENSITIES AND CENTROIDS.DIMARIA DJ; WEINBERG ZA; AITKEN JM et al.1977; J. ELECTRON. MATER.; U.S.A.; DA. 1977; VOL. 6; NO 3; PP. 207-219; BIBL. 11 REF.Article
AMELIORATION DES INDICES LORS DE LA MODULATION DU PHOTOCOURANT DES PHOTOMULTIPLICATEURS PAR DES ELECTRODES EXTERNESGULGAZARYAN KA; GALOYAN KV; ERANOSYAN GA et al.1973; IZVEST. AKAD. NAUK ARM. S.S.R., TEKH. NAUK; S.S.S.R.; DA. 1973; VOL. 26; NO 6; PP. 32-35; ABS. ARM.; BIBL. 3 REF.Article
CARACTERISTIQUES PHOTOELECTRIQUES DES STRUCTURES P-PI -NU -N A BASE DE GAAS(FE)VILISOV AA; GAMAN VI; DIAMANT VM et al.1980; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1980; VOL. 14; NO 4; PP. 625-628; BIBL. 8 REF.Article
TRANSIENT HIGH LEVEL MAJORITY AND MINORITY CARRIER PHOTOCURRENTS IN P-TYPE SILICON SCHOTTKY BARRIER DIODES. II. COMPARISON WITH COMPUTER CALCULATIONS.JANNEY R; SEIBT W; NORDE H et al.1976; SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 7; PP. 645-652; BIBL. 9 REF.Article
PHOTOCURRENT IN FIELD-INDUCED JUNCTIONS.TONG KY; LAM YW.1976; SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 5; PP. 422-424; BIBL. 2 REF.Article
TRANSIENT HIGH LEVEL MAJORITY AND MINORITY CARRIER PHOTOCURRENTS IN P-TYPE SILICON SCHOTTKY BARRIER DIODES. I. COMPARISON WITH ANALYTIC THEORY.NORDE H; SEIBT W; JANNEY R et al.1976; SOLID-STATE ELECTRON.; G.B.; DA. 1976; VOL. 19; NO 7; PP. 653-655; BIBL. 13 REF.Article
A DIGITAL FEEDBACK INTEGRATOR FOR PRECISION PHOTOCURRENT MEASUREMENTS AT HIGH DATA RATES.GABRIEL FC.1975; I.E.E.E. TRANS. INSTRUMENT. MEASUR.; U.S.A.; DA. 1975; VOL. 24; NO 4; PP. 374-378; BIBL. 7 REF.Article
RELAXATION DU COURANT ET DU COURANT PHOTOELECTRIQUE DE STRUCTURES STRATIFIEES A JONCTIONS PN. STRUCTURES MULTICOUCHES BASEES SUR DES SEMICONDUCTEURS A ZONES ETROITESAGAREV VN; STAFEEV VI.1977; RADIOTEKH. I ELEKTRON.; S.S.S.R.; DA. 1977; VOL. 22; NO 11; PP. 2335-2340; BIBL. 7 REF.Article
THEORIE LINEAIRE DES CARACTERISTIQUES FREQUENTIELLES DU REGIME D'INJECTION DE CONTACT MAXIMUM)ZYUGANOV AN; MIKHELASHVILI VM; SVECHNIKOV SV et al.1976; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1976; NO 23; PP. 30-34; BIBL. 12 REF.Article
NEW CHARGE-TRANSFER MECHANISM ACROSS THE INTERFACE BETWEEN SELENIUM AND POLYSTYRENE HEXYLMETHACRYLATEJOSEFOWICZ JY; CHUNG CHING YANG; POPOVIC Z et al.1979; PHYS. REV. LETT.; ISSN 0031-9007; USA; DA. 1979; VOL. 43; NO 12; PP. 886-889; BIBL. 8 REF.Article
RESISTANCE ELECTRIQUE DE TYPE S ET EFFET PHOTOELECTRIQUES DANS DES CRISTAUX INP TYPE N(CU)BERKELIEV A; DURDYEV K; MEREDOV A et al.1977; IZVEST. AKAD. NAUK TURKM. S.S.R., FIZ.-TEKH. KHIM. GEOL. NAUK; S.S.S.R.; DA. 1977; NO 2; PP. 36-39; ABS. TURKM. ANGL.; BIBL. 7 REF.Article
WHITE-LIGHT RESPONSE OF AN M.O.S.T.LAM YW; TONG KY.1976; ELECTRON. LETTERS; G.B.; DA. 1976; VOL. 12; NO 1; PP. 13-14; BIBL. 2 REF.Article
MESUREUR DE LA CONSTANTE DE TEMPS DE RELAXATION DU PHOTOCOURANTZYKOV VM; YUNDA NT.1981; PRIB. TEH. EKSP.; ISSN 0032-8162; SUN; DA. 1981; NO 3; PP. 138-139; BIBL. 3 REF.Article
SATURATION OF PHOTOVOLTAGE AND PHOTOCURRENT IN P-N JUNCTION SOLAR CELLS.DHARIWAL SR; KOTHARI LS; JAIN SC et al.1976; I.E.E.E. TRANS. ELECTRON DEVICES; U.S.A.; DA. 1976; VOL. 23; NO 5; PP. 504-507; BIBL. 9 REF.Article
THE ROLE OF IMAGE FORCES AT ORGANIC CRYSTAL/ELECTRODE INTERFACES.MICHEL BEYERLE ME; HARENGEL W; HABERKORN R et al.1974; MOLEC. CRYST. LIQUID CRYST.; G.B.; DA. 1974; VOL. 25; NO 3-4; PP. 323-338; BIBL. 15 REF.Article
Contribution à l'étude du transport électronique dans le silicium amorphe hydrogéné: détermination de la densité d'états de la bande interdite, étude d'interfaces = Contribution to the study of electronic transport in hydrogenated amorphous silicon: determination of the density of states in the gap, study of interfacesGlodt, Olivier; Longeaud, Christophe.1991, 263 p.Thesis
EFFECT OF BACK SURFACE FIELD ON PHOTOCURRENT IN A SEMICONDUCTOR JUNCTIONAMITABHA SINHA; CHATTOPADHYAYA SK.1978; SOLID-STATE ELECTRON.; GBR; DA. 1978; VOL. 21; NO 7; PP. 943-951; BIBL. 28 REF.Article
PHOTORESPONSE OF MIMIM TRIODES.GUNDLACH KH; KADLEC J.1976; THIN SOLID FILMS; NETHERL.; DA. 1976; VOL. 38; NO 4; PP. 61-66; BIBL. 9 REF.Article
EFFET DE LA CONCENTRATION DU CUIVRE SUR LES CARACTERISTIQUES DE SEUIL DE COUCHES FRITTEES DE CDSLUK'YANCHCHIKOVA NB; KONOVAL AA; PAVELETS AM et al.1975; POLUPROVODN. TEKH. MIKROELEKTRON., U.S.S.R.; S.S.S.R.; DA. 1975; NO 21; PP. 47-51; BIBL. 8 REF.Article
MECANISME DE PASSAGE DU PHOTOCOURANT DANS LES DIODES METAL-GERMANIUM A BARRIERE SUPERFICIELLEDOBROZHANSKIJ YU A; KIL'CHITSKAYA SS; PRESNOV VA et al.1975; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1975; VOL. 9; NO 11; PP. 2060-2064; BIBL. 13 REF.Article
MISE AU POINT D'UNE METHODE DE MESURE DU TEMPS DE VIE DANS LA BASE DE DIODES RAPIDES OU DE COMMUTATION ET LES TRANSISTORS. ETUDE DE SES APPLICATIONS AU CONTROLE DE FABRICATION DES CIRCUITS INTEGRES.BIELLE DASPET D; MARTINEZ J; ELLOUZ E et al.1972; DGRST-7172834; FR.; DA. 1972; PP. (64P.); H.T. 37; BIBL. DISSEM.; (RAPP. FINAL, ACTION CONCERTEE: COMPOSANTS CIRC. MICROMINIATURISES)Report
Characterization of SIMOX-MOS transistors by photo-induced current transient spectroscopyPAPAIOANNOU, G; IOANNOU-SOUGLERIDIS, B; CRISTOLOVEANU, S et al.Semiconductor science and technology. 1991, Vol 6, Num 9, pp 937-939, issn 0268-1242Article
ANALYSIS OF THE MODULATED PHOTOCURRENT IN AMORPHOUS SEMICONDUCTORSOHEDA H.1980; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1980; VOL. 33; NO 2; PP. 203-206; BIBL. 7 REF.Article