THERMAL BACKGROUND SUBTRACTION IN PHOTODIODE DETECTORSPERCIVAL JW; NORDSIECK KH.1980; PUBL. ASTRON. SOC. PAC.; ISSN 0004-6280; USA; DA. 1980; VOL. 92; NO 547; PP. 362-367; BIBL. 7 REF.Article

THE STEADY-STATE OPTICAL RESPONSE OF THE HOMOJUNCTION TRIANGULAR BARRIER PHOTODIODEBARNARD JA; NAJJAR FE; EASTMAN LF et al.1982; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1982; VOL. 29; NO 9; PP. 1396-1403; BIBL. 6 REF.Article

RECEPTEUR OPTIMUM POUR TRANSMISSIONS PAR FIBRES OPTIQUES, OPTIMISATION PAR UN SIGNAL D'ERREURBONNET GEORGES.1980; ; FRA; DA. 1980; 126 P.: ILL.; 30 CM; BIBL. 41 REF.; TH. 3E CYCLE: ELECTRON. MICROONDES/LIMOGES/1980Thesis

ELECTRO-OPTIC SAMPLING WITH PICOSECOND RESOLUTIONKOLNER BH; BLOOM DM; CROSS PS et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 15; PP. 574-575; BIBL. 6 REF.Article

SURFACE-PASSIVATED LOW DARK CURRENT INGAAS PIN PHOTODIODESNICKEL H; KUPHAL E.1983; JOURNAL OF OPTICAL COMMUNICATIONS; ISSN 0173-4911; DEU; DA. 1983; VOL. 4; NO 2; PP. 63-67; BIBL. 19 REF.Article

CHARACTERISTICS AND APPLICATIONS OF PHOTODIODESIWASA H.1982; JEE. JOURNAL OF ELECTRONIC ENGINEERING; ISSN 0385-4507; JPN; DA. 1982; VOL. 19; NO 190; PP. 77-80Article

MOS AREA SENSOR. II: LOW-NOISE MOS AREA SENSOR WITH ANTIBLOOMING PHOTODIODESOHBA S; NAKAI M; ANDO H et al.1980; IEEE TRANS. ELECTRON. DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 8; PP. 1682-1687; BIBL. 17 REF.Article

USE OF PHOTODIODES FOR NEUTRON DOSIMETRY.KOVACEVIC K; STIPCIC N; PAIC G et al.1978; NUCL. INSTRUM. METHODS; NETHERL.; DA. 1978; VOL. 148; NO 2; PP. 291-298; BIBL. 14 REF.Article

PIN-BIPOLAR OPTICAL RECEIVER USING A HIGH-FREQUENCY HIGH-BETA TRANSISTORMITCHELL AF; O'MAHONY MJ; BOXALL BA et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 12; PP. 445-447; BIBL. 6 REF.Article

MOS AREA SENSOR. I: DESIGN CONSIDERATION AND PERFORMANCE OF AN N-P-N STRUCTURE 484 X 384 ELEMENT COLOR MOS IMAGERKOIKE N; TAKEMOTO I; SATOH K et al.1980; IEEE TRANS. ELECTRON. DEVICES; ISSN 0018-9383; USA; DA. 1980; VOL. 27; NO 8; PP. 1676-1681; BIBL. 9 REF.Article

SELF-SCANNED PHOTODIODE ARRAY: HIGH PERFORMANCE OPERATION IN HIGH DISPERSION ASTRONOMICAL SPECTROPHOTOMETRY.VOGT SS; TULL RG; KELTON P et al.1978; APPL. OPT.; U.S.A.; DA. 1978; VOL. 17; NO 4; PP. 574-592; BIBL. 32 REF.Article

LIGHT DETECTION IN DIELECTRIC WAVEGUIDES BY A PHOTODIODE THROUGH DIRECT EVANESCENT FIELD COUPLING.RANGANATH TR; SHYH WANG.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 31; NO 12; PP. 803-806; BIBL. 13 REF.Article

PHOTODIODE AND HOLDER WITH 60 PSEC RESPONSE TIME.BECK G.1976; REV. SCI. INSTRUM.; U.S.A.; DA. 1976; VOL. 47; NO 7; PP. 849-853; BIBL. 16 REF.Article

FORMATION OF SHALLOW PHOTODIODES BY IMPLANTATION OF BORON INTO MERCURY CADMIUM TELLURIDEPITCHER PG; HEMMENT PLF; DAVIS QV et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 25-26; PP. 1090-1092; BIBL. 9 REF.Article

PHOTORECEPTEURS RAPIDES DE RAYONNEMENT IMPULSIONNEL A BASE DE PHOTORESISTANCES ET DE PHOTODIODES A "INERTIE"MKHITRYAN VM; PARTAMYAN KH V.1982; Z. TEH. FIZ.; ISSN 0044-4642; SUN; DA. 1982; VOL. 52; NO 9; PP. 1900-1902; BIBL. 3 REF.Article

IMPROVED 50 PS PHOTOIODERAMSEY JM; WHITTEN WB.1981; REV. SCI. INSTRUM.; ISSN 0034-6748; USA; DA. 1981; VOL. 52; NO 11; PP. 1657-1659; BIBL. 6 REF.Article

LES DIODES SEMICONDUCTRICES STANDARDS EN TANT QUE DETECTEURS RAPIDES DE RAYONNEMENT LASER DE GRANDE LONGUEUR D'ONDEZELENOV AA; MARMUR I YA; OKSMAN YA A et al.1978; ZH. TEKH. FIZ.; S.S.S.R.; DA. 1978; VOL. 48; NO 4; PP. 793-796; BIBL. 7 REF.Article

LIMITEUR DE SIGNAUX FAIBLES A SEUIL DE LIMITATION REGLABLE A PHOTODIODESZABEGALOV BD; VELIKANOV NI.1977; PRIBORY TEKH. EKSPER.; S.S.S.R.; DA. 1977; NO 2; PP. 104-105; BIBL. 2 REF.Article

CINETIQUE DES PHOTODIODES P-N A ACTION RAPIDE EN MATERIAUX AYANT LA CONDUCTIVITE INTRINSEQUEEREMIN VK; STROKAN NB; TARKHIN DV et al.1983; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1983; VOL. 17; NO 1; PP. 143-146; BIBL. 2 REF.Article

ANALYSE DES CARACTERISTIQUES STATISTIQUES ET DES PARAMETRES DES STRUCTURES PHOTOSENSIBLES AVEC DES JONCTIONS P NVOJNOV VP.1982; RADIOTEKH. I ELEKTRON.; SUN; DA. 1982; VOL. 27; NO 2; PP. 378-385; BIBL. 10 REF.Article

FULLY ION-IMPLANTED P⁺-N GERMANIUM AVALANCHE PHOTODIODESKAGAWA S; KANEDA T; MIKAWA T et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 6; PP. 429-431; BIBL. 9 REF.Article

BRUIT DANS LES PHOTODETECTEURS SILICIUM N⁺PI PPI P⁺CHENINI BENZOHRA MOKHTARIA.1981; ; FRA; DA. 1981; 57 P.; 30 CM; BIBL. 29 REF.; TH. 3E CYCLE: BRUIT FOND COMPOSANTS ELECTRON./MONTPELLIER 2/1981/558Thesis

DETECTION OF FAST IONS BY SELF-SCANNING PHOTODIODE ARRAYMANNAMI M; KIMURA K.1980; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1980; VOL. 19; NO 6; PP. L321-L323; BIBL. 6 REF.Article

IMPROVED GERMANIUM AVALANCHE PHOTODIODESMIKAMI O; ANDO H; KANBE H et al.1980; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1980; VOL. 16; NO 9; PP. 1002-1007; BIBL. 22 REF.Article

FONCTIONNEMENT D'UNE PHOTODIODE A AVALANCHE EN REGIME D'HETERODYNAGE ELECTRIQUEVOLOD'KO LV; LAVRUKOVICH VI; PIKULIK VG et al.1977; DOKL. AKAD. NAUK, B.S.S.R.; S.S.S.R.; DA. 1977; VOL. 21; NO 5; PP. 414-416; BIBL. 4 REF.Article