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HOLOGRAPHIC PROPERTIES OF CHALCOGENIDE-METAL PHOTOSENSITIVE MATERIALSFUKAYA T; MATSUMURA S; TSUJIUCHI J et al.1973; OPTICS COMMUNIC.; NETHERL.; DA. 1973; VOL. 7; NO 2; PP. 98-102; BIBL. 1 REF.Serial Issue

THERMALLY DEVELOPABLE IMAGE-SENSING IN METAL-CHALCOGENIDE GLASSES.SHIMIZU I; KOKADO H; INOUE E et al.1975; PHOTOGR. SCI. ENGNG; U.S.A.; DA. 1975; VOL. 19; NO 2; PP. 136-139; BIBL. 4 REF.Article

RELIEF IMAGE IN AG-CHALCOGENIDE GLASS SENSORS.SHIRAKAWA T; SHIMIZU I; KOKADO H et al.1975; PHOTOGR. SCI. ENGNG; U.S.A.; DA. 1975; VOL. 19; NO 2; PP. 139-142; BIBL. 5 REF.Article

POLARITY-DEPENDENT MEMORY SWITCHING AND BEHAVIOR OF AG DENDRITE IN AG-PHOTODOPED AMORPHOUS AS2S3 FILMS. = COMMUTATION ET MEMOIRE DEPENDANT DE LA POLARITE ET COMPORTEMENT D'UNE DENDRITE D'AG DANS DES COUCHES MINCES DE AS2S3 AMORPHES PHOTODOPEES AVEC AGHIROSE Y; HIROSE H.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 6; PP. 2767-2772; BIBL. 12 REF.Article

A NEW INORGANIC ELECTRON RESIST OF HIGH CONTRAST.YOSHIKAWA A; OCHI O; NAGAI H et al.1977; APPL. PHYS. LETTERS; U.S.A.; DA. 1977; VOL. 31; NO 3; PP. 161-163; BIBL. 7 REF.Article

DRY DEVELOPMENT OF SE-GE INORGANIC PHOTORESISTYOSHIKAWA A; OCHI O; MIZUSHIMA Y et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 36; NO 1; PP. 107-109; BIBL. 6 REF.Article

A NOVEL INORGANIC PHOTORESIST UTILIZING AG PHOTODOPING IN SE-GE GLASS FILMS.YOSHIKAWA A; OCHI O; NAGAI H et al.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 29; NO 10; PP. 677-679; BIBL. 4 REF.Article

BACKSCATTERING MEASUREMENTS ON AG PHOTODOPING EFFECT IN AS2S3 GLASS.YAMAMOTO Y; ITOH T; HIROSE Y et al.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 8; PP. 3603-3608; BIBL. 17 REF.Article

On the mechanism of photodoping in vitreous chalcogenidesKOLOBOV, A. V; ELLIOTT, S. R.Philosophical magazine. B. Physics of condensed matter. Electronic, optical and magnetic properties. 1990, Vol 61, Num 5, pp 859-865, issn 0141-8637Article

Studies of Ag photodoping in GexSe1-x glass using microlithography techniquesLEUNG, W; CHEUNG, N. W; NEUREUTHER, A. R et al.Applied physics letters. 1985, Vol 46, Num 5, pp 481-483, issn 0003-6951Article

Herstellung von Beugungsgittern aus photodotierten, amorphen Chalkogenidschichten = Fabrication de réseaux de diffraction de couches de chalcogénure amorphe photodopé = Fabrication of diffraction gratings of photodoped amorphous chalcogenide layersKUNZKE, R; LIEBMANN, G.Journal für Signalaufzeichnungsmaterialien. 1986, Vol 14, Num 6, pp 395-403, issn 0323-598XArticle

Electronic Raman scattering of photoexcited electrons in germaniumOHTAKE, H; TANAKA, K; TSUKAMOTO, T et al.Journal of the Physical Society of Japan. 1996, Vol 65, Num 2, pp 622-626, issn 0031-9015Article

Chemical durability of photodoped and melt-quenched Ag-As2S3 glassesTOHGE, N; MINAMI, T; TSUBAKI, T et al.Journal of materials science letters. 1989, Vol 8, Num 8, pp 935-937, issn 0261-8028Article

PHOTOGRAPHIC AG PHOTODOPING OF AMORPHOUS AS2S3 FILMSMASTERS JI; GOLDBERG GM; LAVINE JM et al.1980; I.E.E.E. ELECTRON DEVICE LETT.; USA; DA. 1980; VOL. 1; NO 4; PP. 61-62; BIBL. 10 REF.Article

PHOTODOPING OF METAL INTO CHALCOGENIDE.INOUE E; KOKADO H; SHIMIZU I et al.1975; IN: NON-SILVER PHOTOGR. PROCESSES. PROC. SYMP.; OXFORD; 1973; LONDON; ACAD. PRESS; DA. 1975; PP. 71-96; BIBL. 7 REF.Conference Paper

X-RAY PHOTOELECTRON SPECTROSCOPY STUDIES OF AG PHOTODOPING IN SE-GE AMORPHOUS FILMSZEMBUTSU S.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 12; PP. 969-971; BIBL. 11 REF.Article

ELECTRON DIFFRACTION STUDIES OF AG PHOTODOPING IN GEXSE1-X GLASS FILMSCHEN CH; TAI KL.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 7; PP. 605-607; BIBL. 11 REF.Article

Zur Photodotierung amorpher Ge- und As-Chalkogenide = Photodopage des chalcogénures de germanium et d'arsenic à l'état amorphe = Photodoping of amorphous Ge- and As-chalcogenidesKLUGE, G.Journal of information recording materials (1985). 1988, Vol 16, Num 3, pp 177-184, issn 0863-0453Article

AMORPHOUS AS2S3 THIN FILM WAVEGUIDE WITH GRATING COUPLERKURITA S; SETO Y; YAJI T et al.1980; OPT. QUANTUM ELECTRON.; GBR; DA. 1980; VOL. 12; NO 2; PP. 179-181; BIBL. 5 REF.Article

A model for the photo-electro ionic phenomena in chalcogenide glassesANIYA, M.Journal of non-crystalline solids. 1996, Vol 198200, pp 762-765, issn 0022-3093, 2Conference Paper

Structure of photodoped and thermally Zn-doped glassy arsenic sulfide filmsKOLOBOV, A. V; ELLIOTT, S. R; STEEL, A. T et al.Physical review. B, Condensed matter. 1990, Vol 41, Num 14, pp 9913-9920, issn 0163-1829Article

WHISKER GROWTH INDUCED BY AG PHOTODOPING IN GLASSY GEXSE1-X FILMSCHEN CH; TAI KL.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 12; PP. 1075-1077; BIBL. 14 REF.Article

DIFFUSION OF SILVER ASSOCIATED WITH PHOTODOPING INTO AMORPHOUS CHALCOGENIDESYAMAGUCHI M; SHIMIZU I; INOUE E et al.1982; JOURNAL OF NON-CRYSTALLINE SOLIDS; ISSN 0022-3093; NLD; DA. 1982; VOL. 47; NO 3; PP. 341-354; BIBL. 17 REF.Article

Influencia del contenido metálico sobre las constantes ópticas de laminas delgadas amorfas de composición As33S67fotodopadas con Ag = Influence of the metal content in the optical constants of silver-photodoped As33S67 amorphous thin filmsGONZALEZ-LEAL, J. M; WAGNER, T; BERNAL-OLIVA, A. M et al.Boletín de la Sociedad Española de Cerámica y Vidrio. 2000, Vol 39, Num 4, pp 476-481, issn 0366-3175Conference Paper

Photodoped chalcogenides as potential infrared holographic mediaSLINGER, C. W; ZAKERY, A; EWEN, P. J. S et al.Applied optics. 1992, Vol 31, Num 14, pp 2490-2498, issn 0003-6935Article

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