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EVIDENCE FOR THE CREATION OF THE MAIN ELECTRON TRAP IN BULK GAASMARTIN GM; TERRIAC P; MAKRAM EBEID S et al.1983; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1983; VOL. 42; NO 1; PP. 61-63; BIBL. 15 REF.Article

A THEORETICAL APPROACH TO EXCITON TRAPPING IN SYSTEMS WITH ARBITRARY TRAP CONCENTRATIONKENKRE VM.1982; CHEMICAL PHYSICS LETTERS; ISSN 0009-2614; NLD; DA. 1982; VOL. 93; NO 3; PP. 260-263; BIBL. 11 REF.Article

THEORY OF THE THERMALLY-STIMULATED-CURRENT TRANSPORT PEAK. APPLICATION TO A DISPERSIVE TRANSPORT CASEPLANS J; ZIELINSKI M; KRYSZEWSKI M et al.1981; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1981; VOL. 23; NO 12; PP. 6557-6569; BIBL. 17 REF.Article

A STUDY OF ELECTRON TRAPS IN VAPOUR-PHASE EPITAXIAL GAAS.MIRCEA A; MITONNEAU A.1975; APPL. PHYS.; GERM.; DA. 1975; VOL. 8; NO 1; PP. 15-21; BIBL. 21 REF.Article

MAJORITY-CARRIER TRAPS IN N- AND P-TYPE EPITAXIAL GAAS.HASEGAWA F; MAJERFELD A.1975; ELECTRON. LETTERS; G.B.; DA. 1975; VOL. 11; NO 4; PP. 286-288; BIBL. 8 REF.Article

RELATIONSHIP BETWEEN CAPTURE COEFFICIENT AND CAPTURE CROSS-SECTION: AVERAGE VELOCITY OF A MAXWELLIAN DISTRIBUTION OF CARRIERS IN A MEDIUM WITH AN ANISOTROPIC EFFECTIVE MASS TENSOR.CROWELL CR.1975; APPL. PHYS.; GERM.; DA. 1975; VOL. 9; NO 1; PP. 79-81; BIBL. 6 REF.Article

FURTHER COMMENTS ON THE DYNAMICS OF EXCITATION TRAPPINGHUBER DL.1981; J. CHEM. PHYS.; ISSN 0021-9606; USA; DA. 1981; VOL. 75; NO 9; PP. 4749-4751; BIBL. 12 REF.Article

EXCITON COLLECTION FROM AN ANTENNA SYSTEM INTO ACCESSIBLE TRAPSTACHIKAWA H; FAULKNER LR.1978; J. AMER. CHEM. SOC.; USA; DA. 1978; VOL. 100; NO 25; PP. 8025-8026; BIBL. 11 REF.Article

NONSTEADY-STATE TECHNIQUES FOR DETERMINING THE ENERGY DISTRIBUTION OF INTERFACE TRAPS IN MNOS (MEMORY) DEVICES.URANWALA JS; SIMMONS JG; MAR HA et al.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 26; NO 12; PP. 697-699; BIBL. 7 REF.Article

EFFECTS OF AMMONIA ANNEAL ON ELECTRON TRAPPINGS IN SILICON DIOXIDELAI SK; DONG DW; HARTSTEIN A et al.1982; JOURNAL OF THE ELECTROCHEMICAL SOCIETY; ISSN 0013-4651; USA; DA. 1982; VOL. 129; NO 9; PP. 2042-2044; BIBL. 14 REF.Article

RELATION BETWEEN CR-LEVEL AND MAIN ELECTRON TRAP (EL2) IN BOAT-GROWN BULK GAASHASEGAWA F; IWATA N; NANNICHI Y et al.1982; JAPANESE JOURNAL OF APPLIED PHYSICS; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 10; PART. 1; PP. 1479-1484; BIBL. 36 REF.Article

ELECTRON TRAPPING AND DETRAPPING CHARACTERISTICS OF ARSENIC-IMPLANTED SIO2 LAYERSDE KEERSMAECKER RF; DI MARIA DJ.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 2; PP. 1085-1101; BIBL. 47 REF.Article

ETUDE DU MECANISME DE RECHARGE DES PIEGES DANS UNE STRUCTURE MNOSPLOTNIKOV AF; SELEZNEV VN; FERCHEV GP et al.1976; MIKROELEKTRONIKA; S.S.S.R.; DA. 1976; VOL. 5; NO 2; PP. 132-137; BIBL. 6 REF.Article

OPTICAL DETRAPPING OF CHARGE CARRIERS IN UNDOPED AND IN TETRACENE-DOPED ANTHRACENE CRYSTALS.ROHRBACHER H; KARL N.1975; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1975; VOL. 29; NO 2; PP. 517-527; ABS. ALLEM.; BIBL. 34 REF.Article

A LUMINESCENCE BAND ASSOCIATED WITH THE MAIN ELECTRON TRAP IN BULK GALLIUM ARSENIDEMIRCEA ROUSSEL A; MAKRAM EBEID S.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 12; PP. 1007-1009; BIBL. 13 REF.Article

DETERMINATION OF DEEP LEVELS IN SEMI-INSULATING CADMIUM TELLURIDE BY THERMALLY STIMULATED CURRENT MEASUREMENTS.SCHARAGER C; MULLER JC; STUCK R et al.1975; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1975; VOL. 31; NO 1; PP. 247-253; ABS. FR.; BIBL. 26 REF.Article

THEORY OF CARRIER MULTIPLICATION FACTORS IN THE PRESENCE OF TRAPPING.LANDSBERG PT; ROBBINS DJ.1975; J. PHYS. C.; G.B.; DA. 1975; VOL. 8; NO 22; PP. 3825-3832; BIBL. 12 REF.Article

DEEP LEVEL CENTERS IN ORDINARY SILICON P-N JUNCTIONSFUJITA Y; SHINOHARA S.1972; J. PHYS. SOC. JAP.; JAP.; DA. 1972; VOL. 33; NO 4; PP. 1174; BIBL. 7 REF.Serial Issue

MODEL OF BACKSURFACE GETTERING OF METAL IMPURITIES IN SILICONVENGURLEKAR AS.1982; APPLIED PHYSICS LETTERS; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 9; PP. 830-832; BIBL. 13 REF.Article

RANDOM-WALK STUDIES OF EXCITATION TRAPPING IN CRYSTALSZUMOFEN G; BLUMEN A.1982; CHEM. PHYS. LETT.; ISSN 0009-2614; NLD; DA. 1982; VOL. 88; NO 1; PP. 63-67; BIBL. 24 REF.Article

THE CAPTURE CROSS SECTION OF A DIPOLE TRAP.BELMONT MR.1975; THIN SOLID FILMS; NETHERL.; DA. 1975; VOL. 28; NO 2; PP. 149-156; BIBL. 8 REF.Article

POINT-CONTACT INJECTION AT HIGH FIELDS IN INSULATOR WITH TRAPS & THERMAL FREE CARRIERSSHARMA YK.1982; INDIAN J. PURE APPL. PHYS.; ISSN 0019-5596; IND; DA. 1982; VOL. 20; NO 2; PP. 130-132; BIBL. 5 REF.Article

ABSORPTION TIME BY A RANDOM TRAP DISTRIBUTIONROSENSTOCK HB; STRALEY JP.1981; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1981; VOL. 24; NO 5; PP. 2540-2544; BIBL. 7 REF.Article

EFFECT OF HEAT TREATMENT ON THE NATURE OF TRAPS IN EPITAXIAL GAAS.HASEGAWA F; MAJERFELD A.1976; ELECTRON. LETTERS; G.B.; DA. 1976; VOL. 12; NO 2; PP. 52-53; BIBL. 5 REF.Article

ELECTRON TRAPPING BY RADIATION-INDUCED CHARGE IN MOS DEVICES.AITKEN JM; YOUNG DR.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 3; PP. 1196-1198; BIBL. 16 REF.Article

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